RF Sputtered Nb-Doped MoS2Thin Film for Effective Detection of NO2Gas Molecules: Theoretical and Experimental Studies

Sankar Ganesh Ramaraj; Srijita Nundy; Pin Zhao; Durgadevi Elamaran; Asif Ali Tahir; Yasuhiro Hayakawa; Manoharan Muruganathan; Hiroshi Mizuta; Sang Woo Kim

doi:10.1021/acsomega.1c07274

RF Sputtered Nb-Doped MoS₂Thin Film for Effective Detection of NO₂Gas Molecules: Theoretical and Experimental Studies

Sankar Ganesh Ramaraj, Srijita Nundy, Pin Zhao, Durgadevi Elamaran, Asif Ali Tahir, Yasuhiro Hayakawa, Manoharan Muruganathan, Hiroshi Mizuta, Sang Woo Kim

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

Doping plays a significant role in affecting the physical and chemical properties of two-dimensional (2D) dichalcogenide materials. Controllable doping is one of the major factors in the modification of the electronic and mechanical properties of 2D materials. MoS₂2D materials have gained significant attention in gas sensing owing to their high surface-To-volume ratio. However, low response and recovery time hinder their application in practical gas sensors. Herein, we report the enhanced gas response and recovery of Nb-doped MoS₂gas sensor synthesized through physical vapor deposition (PVD) toward NO₂at different temperatures. The electronic states of MoS₂and Nb-doped MOS₂monolayers grown by PVD were analyzed based on their work functions. Doping with Nb increases the work function of MoS₂and its electronic properties. The Nb-doped MoS₂showed an ultrafast response and recovery time of t_rec= 30/85 s toward 5 ppm of NO₂at their optimal operating temperature (100 °C).

Original language	English
Pages (from-to)	10492-10501
Number of pages	10
Journal	ACS Omega
Volume	7
Issue number	12
DOIs	https://doi.org/10.1021/acsomega.1c07274
Publication status	Published - 2022 Mar 29

Bibliographical note

Funding Information:
The authors acknowledge the support by (1) a Grant-in-Aid for Scientific Research (Early Career Scientists) (21K14510) from the Japan Society for the Promotion of Science (JSPS KAKENHI), (2) Japan Advanced Institute of Science and Technology, Japan and (3) Engineering and physical Science Research Council (EPSRC) under research grant no.EP/V049046/1

Publisher Copyright:
© 2022 American Chemical Society. All rights reserved.

All Science Journal Classification (ASJC) codes

Chemistry(all)
Chemical Engineering(all)

Access to Document

10.1021/acsomega.1c07274

Cite this

@article{3cf5fe5c71164672851380fef574e700,

title = "RF Sputtered Nb-Doped MoS2Thin Film for Effective Detection of NO2Gas Molecules: Theoretical and Experimental Studies",

abstract = "Doping plays a significant role in affecting the physical and chemical properties of two-dimensional (2D) dichalcogenide materials. Controllable doping is one of the major factors in the modification of the electronic and mechanical properties of 2D materials. MoS22D materials have gained significant attention in gas sensing owing to their high surface-To-volume ratio. However, low response and recovery time hinder their application in practical gas sensors. Herein, we report the enhanced gas response and recovery of Nb-doped MoS2gas sensor synthesized through physical vapor deposition (PVD) toward NO2at different temperatures. The electronic states of MoS2and Nb-doped MOS2monolayers grown by PVD were analyzed based on their work functions. Doping with Nb increases the work function of MoS2and its electronic properties. The Nb-doped MoS2showed an ultrafast response and recovery time of trec= 30/85 s toward 5 ppm of NO2at their optimal operating temperature (100 °C).",

author = "Ramaraj, {Sankar Ganesh} and Srijita Nundy and Pin Zhao and Durgadevi Elamaran and Tahir, {Asif Ali} and Yasuhiro Hayakawa and Manoharan Muruganathan and Hiroshi Mizuta and Kim, {Sang Woo}",

note = "Funding Information: The authors acknowledge the support by (1) a Grant-in-Aid for Scientific Research (Early Career Scientists) (21K14510) from the Japan Society for the Promotion of Science (JSPS KAKENHI), (2) Japan Advanced Institute of Science and Technology, Japan and (3) Engineering and physical Science Research Council (EPSRC) under research grant no.EP/V049046/1 Publisher Copyright: {\textcopyright} 2022 American Chemical Society. All rights reserved.",

year = "2022",

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doi = "10.1021/acsomega.1c07274",

language = "English",

volume = "7",

pages = "10492--10501",

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T1 - RF Sputtered Nb-Doped MoS2Thin Film for Effective Detection of NO2Gas Molecules

T2 - Theoretical and Experimental Studies

AU - Ramaraj, Sankar Ganesh

AU - Nundy, Srijita

AU - Zhao, Pin

AU - Elamaran, Durgadevi

AU - Tahir, Asif Ali

AU - Hayakawa, Yasuhiro

AU - Muruganathan, Manoharan

AU - Mizuta, Hiroshi

AU - Kim, Sang Woo

N1 - Funding Information: The authors acknowledge the support by (1) a Grant-in-Aid for Scientific Research (Early Career Scientists) (21K14510) from the Japan Society for the Promotion of Science (JSPS KAKENHI), (2) Japan Advanced Institute of Science and Technology, Japan and (3) Engineering and physical Science Research Council (EPSRC) under research grant no.EP/V049046/1 Publisher Copyright: © 2022 American Chemical Society. All rights reserved.

PY - 2022/3/29

Y1 - 2022/3/29

N2 - Doping plays a significant role in affecting the physical and chemical properties of two-dimensional (2D) dichalcogenide materials. Controllable doping is one of the major factors in the modification of the electronic and mechanical properties of 2D materials. MoS22D materials have gained significant attention in gas sensing owing to their high surface-To-volume ratio. However, low response and recovery time hinder their application in practical gas sensors. Herein, we report the enhanced gas response and recovery of Nb-doped MoS2gas sensor synthesized through physical vapor deposition (PVD) toward NO2at different temperatures. The electronic states of MoS2and Nb-doped MOS2monolayers grown by PVD were analyzed based on their work functions. Doping with Nb increases the work function of MoS2and its electronic properties. The Nb-doped MoS2showed an ultrafast response and recovery time of trec= 30/85 s toward 5 ppm of NO2at their optimal operating temperature (100 °C).

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