Doping plays a significant role in affecting the physical and chemical properties of two-dimensional (2D) dichalcogenide materials. Controllable doping is one of the major factors in the modification of the electronic and mechanical properties of 2D materials. MoS22D materials have gained significant attention in gas sensing owing to their high surface-To-volume ratio. However, low response and recovery time hinder their application in practical gas sensors. Herein, we report the enhanced gas response and recovery of Nb-doped MoS2gas sensor synthesized through physical vapor deposition (PVD) toward NO2at different temperatures. The electronic states of MoS2and Nb-doped MOS2monolayers grown by PVD were analyzed based on their work functions. Doping with Nb increases the work function of MoS2and its electronic properties. The Nb-doped MoS2showed an ultrafast response and recovery time of trec= 30/85 s toward 5 ppm of NO2at their optimal operating temperature (100 °C).
|Number of pages||10|
|Publication status||Published - 2022 Mar 29|
Bibliographical noteFunding Information:
The authors acknowledge the support by (1) a Grant-in-Aid for Scientific Research (Early Career Scientists) (21K14510) from the Japan Society for the Promotion of Science (JSPS KAKENHI), (2) Japan Advanced Institute of Science and Technology, Japan and (3) Engineering and physical Science Research Council (EPSRC) under research grant no.EP/V049046/1
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All Science Journal Classification (ASJC) codes
- Chemical Engineering(all)