Robust TaN x diffusion barrier for Cu-interconnect technology with subnanometer thickness by metal-organic plasma-enhanced atomic layer deposition

Hyungjun Kim, C. Detavenier, O. Van Der Straten, S. M. Rossnagel, A. J. Kellock, D. G. Park

Research output: Contribution to journalArticle

96 Citations (Scopus)

Abstract

TaN x diffusion barriers with good barrier properties at subnanometer thickness were deposited by plasma-enhanced atomic layer deposition (PE-ALD) from pentakis(dimethylamino)Ta. Hydrogen and/or nitrogen plasma was used as reactants to produce Ta Nx thin films with a different nitrogen content. The film properties including the carbon and oxygen impurity content were affected by the nitrogen flow during the process. The deposited film has nanocrystalline grains with hydrogen-only plasma, while the amorphous structure was obtained for nitrogen plasma. The diffusion barrier properties of deposited TaN films for Cu interconnects have been studied by thermal stress test based on synchrotron x-ray diffraction. The results indicate that the PE-ALD TaN films are good diffusion barriers even at a small thickness as 0.6 nm. Better diffusion barrier properties were obtained for higher nitrogen content. Based on a diffusion kinetics analysis, the nanocrystalline microstructure of the films was responsible for the better diffusion barrier properties compared to polycrystalline PE-ALD TaN films deposited from Ta Cl5.

Original languageEnglish
Article number014308
JournalJournal of Applied Physics
Volume98
Issue number1
DOIs
Publication statusPublished - 2005 Jul 1

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atomic layer epitaxy
metals
nitrogen plasma
nitrogen
hydrogen
thermal stresses
synchrotrons
x ray diffraction
impurities
microstructure
carbon
kinetics
oxygen
thin films

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

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title = "Robust TaN x diffusion barrier for Cu-interconnect technology with subnanometer thickness by metal-organic plasma-enhanced atomic layer deposition",
abstract = "TaN x diffusion barriers with good barrier properties at subnanometer thickness were deposited by plasma-enhanced atomic layer deposition (PE-ALD) from pentakis(dimethylamino)Ta. Hydrogen and/or nitrogen plasma was used as reactants to produce Ta Nx thin films with a different nitrogen content. The film properties including the carbon and oxygen impurity content were affected by the nitrogen flow during the process. The deposited film has nanocrystalline grains with hydrogen-only plasma, while the amorphous structure was obtained for nitrogen plasma. The diffusion barrier properties of deposited TaN films for Cu interconnects have been studied by thermal stress test based on synchrotron x-ray diffraction. The results indicate that the PE-ALD TaN films are good diffusion barriers even at a small thickness as 0.6 nm. Better diffusion barrier properties were obtained for higher nitrogen content. Based on a diffusion kinetics analysis, the nanocrystalline microstructure of the films was responsible for the better diffusion barrier properties compared to polycrystalline PE-ALD TaN films deposited from Ta Cl5.",
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Robust TaN x diffusion barrier for Cu-interconnect technology with subnanometer thickness by metal-organic plasma-enhanced atomic layer deposition. / Kim, Hyungjun; Detavenier, C.; Van Der Straten, O.; Rossnagel, S. M.; Kellock, A. J.; Park, D. G.

In: Journal of Applied Physics, Vol. 98, No. 1, 014308, 01.07.2005.

Research output: Contribution to journalArticle

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AU - Detavenier, C.

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AU - Rossnagel, S. M.

AU - Kellock, A. J.

AU - Park, D. G.

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