We fabricated alkaline-earth metal doped indium oxide thin-film transistors (TFTs) using a solution process. To analyze the effects of Mg, Ca, and Sr on the solution-processed indium oxide TFTs, thermogravimetric analysis, X-ray diffraction, atomic force microscopy analysis, and X-ray photoelectron spectroscopy were performed. The main difference in electrical performance results from the dehydroxylation energy of alkalineearth metal, each ion radius and optical band gap. The optimized Mg-, Ca-, and Sr-doped indium oxide TFTs show mobilities of 2.03, 1.64, and 1.08 cm2 V-1 s -1, respectively, and an on-off current ratio of about ̃10 5.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)