Role of alkaline-earth metal in solution-processed indium oxide based thin-film transistors

Jee Ho Park, Young Bum Yoo, Keun Ho Lee, Woo Soon Jang, Jin Young Oh, Soo Sang Chae, Won Jin Choi, Hong Koo Baik

Research output: Contribution to journalArticlepeer-review

8 Citations (Scopus)

Abstract

We fabricated alkaline-earth metal doped indium oxide thin-film transistors (TFTs) using a solution process. To analyze the effects of Mg, Ca, and Sr on the solution-processed indium oxide TFTs, thermogravimetric analysis, X-ray diffraction, atomic force microscopy analysis, and X-ray photoelectron spectroscopy were performed. The main difference in electrical performance results from the dehydroxylation energy of alkalineearth metal, each ion radius and optical band gap. The optimized Mg-, Ca-, and Sr-doped indium oxide TFTs show mobilities of 2.03, 1.64, and 1.08 cm2 V-1 s -1, respectively, and an on-off current ratio of about ̃10 5.

Original languageEnglish
Article number111101
JournalApplied Physics Express
Volume5
Issue number11
DOIs
Publication statusPublished - 2012 Nov

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

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