Role of dopants as a carrier suppressor and strong oxygen binder in amorphous indium-oxide-based field effect transistor

Shanmugam Parthiban, Jang Yeon Kwon

Research output: Contribution to journalReview article

56 Citations (Scopus)

Abstract

In this review, we discuss the recent developments of high-performance and improved-stability of indium-oxide-based transparent amorphous-oxide semiconductor (TAOS) thin-film transistors (TFTs) properties. TAOSs are widely explored with the aim of producing high-performance semiconductors suitable for the channel layer of TFTs which enable to survive under light and thermal-bias-induced stress conditions. Numerous TAOSs have been invented with some improved performance characteristics of TFTs such as mobility, light and thermal induced bias stress. However, there has been no clear elucidation of the mechanisms driving these improvements. In this review, we discuss the progression of innovations of high performance indium-oxide-based TAOS TFTs from its first reported amorphous indium gallium zinc oxide (a-IGZO) to present, and their properties that are correlated with the Lewis acid strength (L) and bonding strength of dopant and oxygen as a carrier suppressor and strong binder. The proposed mechanism can be practical to develop novel TAOS TFTs with high mobility and stability.

Original languageEnglish
Pages (from-to)1585-1596
Number of pages12
JournalJournal of Materials Research
Volume29
Issue number15
DOIs
Publication statusPublished - 2014

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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