Role of dopants as a carrier suppressor and strong oxygen binder in amorphous indium-oxide-based field effect transistor

Engineering & Materials Science

• Indium 90%
• Thin film transistors 88%
• Amorphous semiconductors 79%
• Doping (additives) 77%
• Field effect transistors 74%
• Binders 64%
• Oxides 59%
• Oxygen 56%
• Oxide semiconductors 49%
• Gallium 19%
• Zinc oxide 18%
• Hot Temperature 13%
• Acids 12%
• Semiconductor materials 12%

Physics & Astronomy

• suppressors 100%
• indium oxides 68%
• transistors 55%
• field effect transistors 54%
• oxygen 41%
• thin films 35%
• oxides 25%
• performance 24%
• gallium oxides 17%
• progressions 15%
• indium 13%
• acids 12%

Chemistry

• Field Effect 69%
• Binding Agent 61%
• Doping Material 61%
• Amorphous Material 48%
• Semiconductor 42%
• Dioxygen 33%
• Compound Mobility 21%
• Strength 17%
• Zinc Oxide 13%
• Lewis Acid 12%