Role of gallium doping in dramatically lowering amorphous-oxide processing temperatures for solution-derived indium zinc oxide thin-film transistors

Sunho Jeong, Young Geun Ha, Jooho Moon, Antonio Facchetti, Tobin J. Marks

Research output: Contribution to journalArticle

414 Citations (Scopus)

Abstract

Ga doping in indium zinc oxide (IZO)based amorphous-oxide semiconductors (AOSs) promotes the formation of oxidelattice structures with oxygen vacancies at low annealing temperatures, which is essential for acceptable thin-film-transistor performance (see figure). The mobility dependence on annealing temperature and AOS composition are analyzed and the chemical role of Ga is clarified, as required for solution-processed, lowtemperature-annealed AOSs.

Original languageEnglish
Pages (from-to)1346-1350
Number of pages5
JournalAdvanced Materials
Volume22
Issue number12
DOIs
Publication statusPublished - 2010 Mar 26

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

Fingerprint Dive into the research topics of 'Role of gallium doping in dramatically lowering amorphous-oxide processing temperatures for solution-derived indium zinc oxide thin-film transistors'. Together they form a unique fingerprint.

  • Cite this