Role of gallium doping in dramatically lowering amorphous-oxide processing temperatures for solution-derived indium zinc oxide thin-film transistors

Sunho Jeong; Young Geun Ha; Jooho Moon; Antonio Facchetti; Tobin J. Marks

doi:10.1002/adma.200902450

Role of gallium doping in dramatically lowering amorphous-oxide processing temperatures for solution-derived indium zinc oxide thin-film transistors

Sunho Jeong, Young Geun Ha, Jooho Moon, Antonio Facchetti, Tobin J. Marks

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

495 Citations (Scopus)

Abstract

Ga doping in indium zinc oxide (IZO)based amorphous-oxide semiconductors (AOSs) promotes the formation of oxidelattice structures with oxygen vacancies at low annealing temperatures, which is essential for acceptable thin-film-transistor performance (see figure). The mobility dependence on annealing temperature and AOS composition are analyzed and the chemical role of Ga is clarified, as required for solution-processed, lowtemperature-annealed AOSs.

Original language	English
Pages (from-to)	1346-1350
Number of pages	5
Journal	Advanced Materials
Volume	22
Issue number	12
DOIs	https://doi.org/10.1002/adma.200902450
Publication status	Published - 2010 Mar 26

All Science Journal Classification (ASJC) codes

Materials Science(all)
Mechanics of Materials
Mechanical Engineering

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abstract = "Ga doping in indium zinc oxide (IZO)based amorphous-oxide semiconductors (AOSs) promotes the formation of oxidelattice structures with oxygen vacancies at low annealing temperatures, which is essential for acceptable thin-film-transistor performance (see figure). The mobility dependence on annealing temperature and AOS composition are analyzed and the chemical role of Ga is clarified, as required for solution-processed, lowtemperature-annealed AOSs.",

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AU - Ha, Young Geun

AU - Moon, Jooho

AU - Facchetti, Antonio

AU - Marks, Tobin J.

PY - 2010/3/26

Y1 - 2010/3/26

N2 - Ga doping in indium zinc oxide (IZO)based amorphous-oxide semiconductors (AOSs) promotes the formation of oxidelattice structures with oxygen vacancies at low annealing temperatures, which is essential for acceptable thin-film-transistor performance (see figure). The mobility dependence on annealing temperature and AOS composition are analyzed and the chemical role of Ga is clarified, as required for solution-processed, lowtemperature-annealed AOSs.

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Role of gallium doping in dramatically lowering amorphous-oxide processing temperatures for solution-derived indium zinc oxide thin-film transistors

Abstract

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