Ga doping in indium zinc oxide (IZO)based amorphous-oxide semiconductors (AOSs) promotes the formation of oxidelattice structures with oxygen vacancies at low annealing temperatures, which is essential for acceptable thin-film-transistor performance (see figure). The mobility dependence on annealing temperature and AOS composition are analyzed and the chemical role of Ga is clarified, as required for solution-processed, lowtemperature-annealed AOSs.
|Number of pages||5|
|Publication status||Published - 2010 Mar 26|
All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Mechanics of Materials
- Mechanical Engineering