Abstract
Role of the composition of InxGa1-xAs strain-relief layer (SRL) in controlling the strain fields and consequent modification of band structures in a close-stacked multi-layer InAs/GaAs quantum dot (QD) system was investigated within the framework of continuum elasticity and model solid theory. It was predicted that strains in the QDs are significantly relieved in proportion to the In concentration in the InxGa1-xAs SRLs between InAs QD and GaAs cap layer. The relaxation of strains caused substantial shift of the conduction band edge in the QDs mainly by the relief of hydrostatic strain component resulting in narrower bandgap within the QDs with increasing In concentration. It is interpreted that such strain relaxation and subsequent band structure modifications are responsible for the experimentally observed redshift of photo-luminescence (PL) spectra elsewhere. Therefore, together with existing experimental work, it is confirmed that conduction band edges of QD systems can be tailored by the control of the SRL composition allowing more flexibility in bandgap engineering.
| Original language | English |
|---|---|
| Pages (from-to) | 1496-1499 |
| Number of pages | 4 |
| Journal | Journal of the Physical Society of Japan |
| Volume | 74 |
| Issue number | 5 |
| DOIs | |
| Publication status | Published - 2005 May 1 |
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All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)
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Role of InxGa1-xAs layer composition in modifying strain fields and carrier confinement potentials in a close-stacked InAs/GaAs quantum dot system. / Lee, Woong; Yoo, Yo Han; Shin, Hyunho; Myoung, Jae Min.
In: Journal of the Physical Society of Japan, Vol. 74, No. 5, 01.05.2005, p. 1496-1499.Research output: Contribution to journal › Article
TY - JOUR
T1 - Role of InxGa1-xAs layer composition in modifying strain fields and carrier confinement potentials in a close-stacked InAs/GaAs quantum dot system
AU - Lee, Woong
AU - Yoo, Yo Han
AU - Shin, Hyunho
AU - Myoung, Jae Min
PY - 2005/5/1
Y1 - 2005/5/1
N2 - Role of the composition of InxGa1-xAs strain-relief layer (SRL) in controlling the strain fields and consequent modification of band structures in a close-stacked multi-layer InAs/GaAs quantum dot (QD) system was investigated within the framework of continuum elasticity and model solid theory. It was predicted that strains in the QDs are significantly relieved in proportion to the In concentration in the InxGa1-xAs SRLs between InAs QD and GaAs cap layer. The relaxation of strains caused substantial shift of the conduction band edge in the QDs mainly by the relief of hydrostatic strain component resulting in narrower bandgap within the QDs with increasing In concentration. It is interpreted that such strain relaxation and subsequent band structure modifications are responsible for the experimentally observed redshift of photo-luminescence (PL) spectra elsewhere. Therefore, together with existing experimental work, it is confirmed that conduction band edges of QD systems can be tailored by the control of the SRL composition allowing more flexibility in bandgap engineering.
AB - Role of the composition of InxGa1-xAs strain-relief layer (SRL) in controlling the strain fields and consequent modification of band structures in a close-stacked multi-layer InAs/GaAs quantum dot (QD) system was investigated within the framework of continuum elasticity and model solid theory. It was predicted that strains in the QDs are significantly relieved in proportion to the In concentration in the InxGa1-xAs SRLs between InAs QD and GaAs cap layer. The relaxation of strains caused substantial shift of the conduction band edge in the QDs mainly by the relief of hydrostatic strain component resulting in narrower bandgap within the QDs with increasing In concentration. It is interpreted that such strain relaxation and subsequent band structure modifications are responsible for the experimentally observed redshift of photo-luminescence (PL) spectra elsewhere. Therefore, together with existing experimental work, it is confirmed that conduction band edges of QD systems can be tailored by the control of the SRL composition allowing more flexibility in bandgap engineering.
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UR - http://www.scopus.com/inward/citedby.url?scp=20444369554&partnerID=8YFLogxK
U2 - 10.1143/JPSJ.74.1496
DO - 10.1143/JPSJ.74.1496
M3 - Article
AN - SCOPUS:20444369554
VL - 74
SP - 1496
EP - 1499
JO - Journal of the Physical Society of Japan
JF - Journal of the Physical Society of Japan
SN - 0031-9015
IS - 5
ER -