TY - JOUR
T1 - Role of O3 and OH• radicals in ozonated aqueous solution for the photoresist removal of semiconductor fabrication
AU - Sang, Woo Lim
AU - Chidsey, Christopher E.D.
PY - 2005
Y1 - 2005
N2 - The role of direct oxidation by aqueous O3 and advanced oxidation by OH• in the removal of photoresist was studied by chemical kinetic simulation and experiments of O3 reactivity and decomposition in homogeneous aqueous solutions. O3 is the main species responsible for the removal of conventional photoresist in the ozonated water cleaning process, and the timing of initiator addition to ozonated water is important to maintain high O3 concentration. Simulation using t-butanol implies that maintenance of a high OH• concentration is required to remove highly implanted photoresists that O3 itself cannot easily remove.
AB - The role of direct oxidation by aqueous O3 and advanced oxidation by OH• in the removal of photoresist was studied by chemical kinetic simulation and experiments of O3 reactivity and decomposition in homogeneous aqueous solutions. O3 is the main species responsible for the removal of conventional photoresist in the ozonated water cleaning process, and the timing of initiator addition to ozonated water is important to maintain high O3 concentration. Simulation using t-butanol implies that maintenance of a high OH• concentration is required to remove highly implanted photoresists that O3 itself cannot easily remove.
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U2 - 10.1080/01919510590925257
DO - 10.1080/01919510590925257
M3 - Article
AN - SCOPUS:18244407516
SN - 0191-9512
VL - 27
SP - 139
EP - 146
JO - Ozone: Science and Engineering
JF - Ozone: Science and Engineering
IS - 2
ER -