Role of O 3 and OH radicals in ozonated aqueous solution for the photoresist removal of semiconductor fabrication

Sangwoo Lim, Christopher E.D. Chidsey

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

The role of direct oxidation by aqueous O 3 and advanced oxidation by OH in the removal of photoresist was studied by chemical kinetic simulation and experiments of O 3 reactivity and decomposition in homogeneous aqueous solutions. O 3 is the main species responsible for the removal of conventional photoresist in the ozonated water cleaning process, and the timing of initiator addition to ozonated water is important to maintain high O 3 concentration. Simulation using t-butanol implies that maintenance of a high OH concentration is required to remove highly implanted photoresists that O 3 itself cannot easily remove.

Original languageEnglish
Pages (from-to)139-146
Number of pages8
JournalOzone: Science and Engineering
Volume27
Issue number2
DOIs
Publication statusPublished - 2005 May 19

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Photoresists
aqueous solution
Semiconductor materials
Fabrication
oxidation
tert-Butyl Alcohol
simulation
Oxidation
Water
decomposition
Butenes
Reaction kinetics
kinetics
water
Cleaning
Decomposition
experiment
removal
semiconductor
Experiments

All Science Journal Classification (ASJC) codes

  • Environmental Engineering
  • Environmental Chemistry

Cite this

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Role of O 3 and OH radicals in ozonated aqueous solution for the photoresist removal of semiconductor fabrication . / Lim, Sangwoo; Chidsey, Christopher E.D.

In: Ozone: Science and Engineering, Vol. 27, No. 2, 19.05.2005, p. 139-146.

Research output: Contribution to journalArticle

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