Role of Ru nano-dots embedded in TiO2 thin films for improving the resistive switching behavior

Jung Ho Yoon; Kyung Min Kim; Min Hwan Lee; Seong Keun Kim; Gun Hwan Kim; Seul Ji Song; Jun Yeong Seok; Cheol Seong Hwang

doi:10.1063/1.3525801

Role of Ru nano-dots embedded in TiO₂ thin films for improving the resistive switching behavior

Jung Ho Yoon, Kyung Min Kim, Min Hwan Lee, Seong Keun Kim, Gun Hwan Kim, Seul Ji Song, Jun Yeong Seok, Cheol Seong Hwang

School of System & Semiconductor Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

Ru nano-dots were embedded in a Pt/ TiO₂ /Pt resistive switching cell to improve the uniformity of the switching parameters. The TiO₂ film grown on the Ru nano-dots had a rutile structure locally whereas other parts of the TiO₂ film had an anatase structure. The rutile-structured TiO₂ formed conducting filaments easily and their rupture was much more uniform than the randomized ones in anatase TiO ₂. This largely improved the resistance uniformity at the reading voltage during the repeated resistance switching events. The improvement was also attributed to the high leakage current of the pristine sample at the reading voltage.

Original language	English
Article number	232904
Journal	Applied Physics Letters
Volume	97
Issue number	23
DOIs	https://doi.org/10.1063/1.3525801
Publication status	Published - 2010 Dec 6

Bibliographical note

Funding Information:
This study was supported by the National Research Program for the Nano Semiconductor Apparatus development sponsored by the Korea Ministry of Knowledge and Economy, the Convergent Research Center program (2010K000977), 0.1 Terabit NVM Devices sponsored by the Korean Ministry of Knowledge and Economy, and the World Class University program through the National Research Foundation of Korea funded by the Ministry of Education, Science, and Technology (R31-2008-000-10075-0).

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.3525801

Cite this

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title = "Role of Ru nano-dots embedded in TiO2 thin films for improving the resistive switching behavior",

abstract = "Ru nano-dots were embedded in a Pt/ TiO2 /Pt resistive switching cell to improve the uniformity of the switching parameters. The TiO2 film grown on the Ru nano-dots had a rutile structure locally whereas other parts of the TiO2 film had an anatase structure. The rutile-structured TiO2 formed conducting filaments easily and their rupture was much more uniform than the randomized ones in anatase TiO 2. This largely improved the resistance uniformity at the reading voltage during the repeated resistance switching events. The improvement was also attributed to the high leakage current of the pristine sample at the reading voltage.",

author = "Yoon, {Jung Ho} and Kim, {Kyung Min} and Lee, {Min Hwan} and Kim, {Seong Keun} and Kim, {Gun Hwan} and Song, {Seul Ji} and Seok, {Jun Yeong} and Hwang, {Cheol Seong}",

note = "Funding Information: This study was supported by the National Research Program for the Nano Semiconductor Apparatus development sponsored by the Korea Ministry of Knowledge and Economy, the Convergent Research Center program (2010K000977), 0.1 Terabit NVM Devices sponsored by the Korean Ministry of Knowledge and Economy, and the World Class University program through the National Research Foundation of Korea funded by the Ministry of Education, Science, and Technology (R31-2008-000-10075-0).",

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AU - Yoon, Jung Ho

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AU - Kim, Gun Hwan

AU - Song, Seul Ji

AU - Seok, Jun Yeong

AU - Hwang, Cheol Seong

N1 - Funding Information: This study was supported by the National Research Program for the Nano Semiconductor Apparatus development sponsored by the Korea Ministry of Knowledge and Economy, the Convergent Research Center program (2010K000977), 0.1 Terabit NVM Devices sponsored by the Korean Ministry of Knowledge and Economy, and the World Class University program through the National Research Foundation of Korea funded by the Ministry of Education, Science, and Technology (R31-2008-000-10075-0).

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N2 - Ru nano-dots were embedded in a Pt/ TiO2 /Pt resistive switching cell to improve the uniformity of the switching parameters. The TiO2 film grown on the Ru nano-dots had a rutile structure locally whereas other parts of the TiO2 film had an anatase structure. The rutile-structured TiO2 formed conducting filaments easily and their rupture was much more uniform than the randomized ones in anatase TiO 2. This largely improved the resistance uniformity at the reading voltage during the repeated resistance switching events. The improvement was also attributed to the high leakage current of the pristine sample at the reading voltage.

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