Role of Ru nano-dots embedded in TiO2 thin films for improving the resistive switching behavior

Jung Ho Yoon, Kyung Min Kim, Min Hwan Lee, Seong Keun Kim, Gun Hwan Kim, Seul Ji Song, Jun Yeong Seok, Cheol Seong Hwang

Research output: Contribution to journalArticlepeer-review


Ru nano-dots were embedded in a Pt/ TiO2 /Pt resistive switching cell to improve the uniformity of the switching parameters. The TiO2 film grown on the Ru nano-dots had a rutile structure locally whereas other parts of the TiO2 film had an anatase structure. The rutile-structured TiO2 formed conducting filaments easily and their rupture was much more uniform than the randomized ones in anatase TiO 2. This largely improved the resistance uniformity at the reading voltage during the repeated resistance switching events. The improvement was also attributed to the high leakage current of the pristine sample at the reading voltage.

Original languageEnglish
Article number232904
JournalApplied Physics Letters
Issue number23
Publication statusPublished - 2010 Dec 6

Bibliographical note

Funding Information:
This study was supported by the National Research Program for the Nano Semiconductor Apparatus development sponsored by the Korea Ministry of Knowledge and Economy, the Convergent Research Center program (2010K000977), 0.1 Terabit NVM Devices sponsored by the Korean Ministry of Knowledge and Economy, and the World Class University program through the National Research Foundation of Korea funded by the Ministry of Education, Science, and Technology (R31-2008-000-10075-0).

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)


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