Room temperature electron-mediated ferromagnetism in a diluted magnetic semiconductor: (Ga,Mn)N

Kwang Soo Huh, Moon Ho Ham, Jae Min Myoung, Jeung Mi Lee, Kyoung Il Lee, Joon Yeon Chang, Suk Hee Han, Hi Jung Kim, Woo Young Lee

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17 Citations (Scopus)

Abstract

We present the electron-induced ferromagnetic ordering and magnetotransport of epitaxial (Ga1-x Mnx)N films with low Mn concentration (x = 0.0006-0.005) grown by plasma-enhanced molecular beam epitaxy (PEMBE). The (Ga,Mn)N films were found to exhibit n-type conductivity, ferromagnetic ordering with Curie temperature in the range 550-700 K, in-plane magnetic anisotropy, and negative magnetoresistance (MR) in the range of 4-300 K. Our results are indicative of ferromagnetic semiconducting (Ga,Mn)N films due to the coupling of electron spins and localized Mn moments.

Original languageEnglish
Pages (from-to)L1069-L1071
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume41
Issue number10 A
Publication statusPublished - 2002 Oct 1

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

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    Huh, K. S., Ham, M. H., Myoung, J. M., Lee, J. M., Lee, K. I., Chang, J. Y., Han, S. H., Kim, H. J., & Lee, W. Y. (2002). Room temperature electron-mediated ferromagnetism in a diluted magnetic semiconductor: (Ga,Mn)N. Japanese Journal of Applied Physics, Part 2: Letters, 41(10 A), L1069-L1071.