Room temperature electron-mediated ferromagnetism in a diluted magnetic semiconductor

(Ga,Mn)N

Kwang Soo Huh, Moon Ho Ham, Jae Min Myoung, Jeung Mi Lee, Kyoung Il Lee, Joon Yeon Chang, Suk Hee Han, Hi Jung Kim, Woo Young Lee

Research output: Contribution to journalArticle

17 Citations (Scopus)

Abstract

We present the electron-induced ferromagnetic ordering and magnetotransport of epitaxial (Ga1-x Mnx)N films with low Mn concentration (x = 0.0006-0.005) grown by plasma-enhanced molecular beam epitaxy (PEMBE). The (Ga,Mn)N films were found to exhibit n-type conductivity, ferromagnetic ordering with Curie temperature in the range 550-700 K, in-plane magnetic anisotropy, and negative magnetoresistance (MR) in the range of 4-300 K. Our results are indicative of ferromagnetic semiconducting (Ga,Mn)N films due to the coupling of electron spins and localized Mn moments.

Original languageEnglish
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume41
Issue number10 A
Publication statusPublished - 2002 Oct 1

Fingerprint

Ferromagnetism
Electron temperature
ferromagnetism
room temperature
Galvanomagnetic effects
electrons
Electrons
Magnetic anisotropy
Magnetoresistance
Curie temperature
Molecular beam epitaxy
electron spin
low concentrations
molecular beam epitaxy
moments
Plasmas
conductivity
anisotropy
Diluted magnetic semiconductors

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

Cite this

Huh, Kwang Soo ; Ham, Moon Ho ; Myoung, Jae Min ; Lee, Jeung Mi ; Lee, Kyoung Il ; Chang, Joon Yeon ; Han, Suk Hee ; Kim, Hi Jung ; Lee, Woo Young. / Room temperature electron-mediated ferromagnetism in a diluted magnetic semiconductor : (Ga,Mn)N. In: Japanese Journal of Applied Physics, Part 2: Letters. 2002 ; Vol. 41, No. 10 A.
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abstract = "We present the electron-induced ferromagnetic ordering and magnetotransport of epitaxial (Ga1-x Mnx)N films with low Mn concentration (x = 0.0006-0.005) grown by plasma-enhanced molecular beam epitaxy (PEMBE). The (Ga,Mn)N films were found to exhibit n-type conductivity, ferromagnetic ordering with Curie temperature in the range 550-700 K, in-plane magnetic anisotropy, and negative magnetoresistance (MR) in the range of 4-300 K. Our results are indicative of ferromagnetic semiconducting (Ga,Mn)N films due to the coupling of electron spins and localized Mn moments.",
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Room temperature electron-mediated ferromagnetism in a diluted magnetic semiconductor : (Ga,Mn)N. / Huh, Kwang Soo; Ham, Moon Ho; Myoung, Jae Min; Lee, Jeung Mi; Lee, Kyoung Il; Chang, Joon Yeon; Han, Suk Hee; Kim, Hi Jung; Lee, Woo Young.

In: Japanese Journal of Applied Physics, Part 2: Letters, Vol. 41, No. 10 A, 01.10.2002.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Room temperature electron-mediated ferromagnetism in a diluted magnetic semiconductor

T2 - (Ga,Mn)N

AU - Huh, Kwang Soo

AU - Ham, Moon Ho

AU - Myoung, Jae Min

AU - Lee, Jeung Mi

AU - Lee, Kyoung Il

AU - Chang, Joon Yeon

AU - Han, Suk Hee

AU - Kim, Hi Jung

AU - Lee, Woo Young

PY - 2002/10/1

Y1 - 2002/10/1

N2 - We present the electron-induced ferromagnetic ordering and magnetotransport of epitaxial (Ga1-x Mnx)N films with low Mn concentration (x = 0.0006-0.005) grown by plasma-enhanced molecular beam epitaxy (PEMBE). The (Ga,Mn)N films were found to exhibit n-type conductivity, ferromagnetic ordering with Curie temperature in the range 550-700 K, in-plane magnetic anisotropy, and negative magnetoresistance (MR) in the range of 4-300 K. Our results are indicative of ferromagnetic semiconducting (Ga,Mn)N films due to the coupling of electron spins and localized Mn moments.

AB - We present the electron-induced ferromagnetic ordering and magnetotransport of epitaxial (Ga1-x Mnx)N films with low Mn concentration (x = 0.0006-0.005) grown by plasma-enhanced molecular beam epitaxy (PEMBE). The (Ga,Mn)N films were found to exhibit n-type conductivity, ferromagnetic ordering with Curie temperature in the range 550-700 K, in-plane magnetic anisotropy, and negative magnetoresistance (MR) in the range of 4-300 K. Our results are indicative of ferromagnetic semiconducting (Ga,Mn)N films due to the coupling of electron spins and localized Mn moments.

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JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

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