We present the electron-induced ferromagnetic ordering and magnetotransport of epitaxial (Ga1-x Mnx)N films with low Mn concentration (x = 0.0006-0.005) grown by plasma-enhanced molecular beam epitaxy (PEMBE). The (Ga,Mn)N films were found to exhibit n-type conductivity, ferromagnetic ordering with Curie temperature in the range 550-700 K, in-plane magnetic anisotropy, and negative magnetoresistance (MR) in the range of 4-300 K. Our results are indicative of ferromagnetic semiconducting (Ga,Mn)N films due to the coupling of electron spins and localized Mn moments.
|Journal||Japanese Journal of Applied Physics, Part 2: Letters|
|Issue number||10 A|
|Publication status||Published - 2002 Oct 1|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)
- Physics and Astronomy(all)