Room temperature ferroelectric property of BiMnO3 thin film with double SrTiO3 buffer layers on Pt/Ti/SiO2/Si substrate

J. Y. Son, C. S. Park, Hyungjun Kim

Research output: Contribution to journalArticle

11 Citations (Scopus)


We fabricated high quality BiMnO3 thin films with double SrTiO3 buffer layers on Pt/Ti/SiO2/Si substrates, in which the SrTiO3 buffer layers were used for the reduction of leakage current in BiMnO3 thin films. We chose an SrTiO3 thickness of about 5 nm, which was obtained by the fitting of ellipsometer data. We confirmed a remarkable enhancement in leakage current. BiMnO3 thin films exhibited a ferromagnetic transition with Curie temperature of about 105 K. The BiMnO3 thin film also showed a good ferroelectric property with a remnant polarization of about 9 μC/cm2.

Original languageEnglish
Pages (from-to)289-292
Number of pages4
JournalMetals and Materials International
Issue number2
Publication statusPublished - 2010 Apr

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Mechanics of Materials
  • Metals and Alloys
  • Materials Chemistry

Fingerprint Dive into the research topics of 'Room temperature ferroelectric property of BiMnO<sub>3</sub> thin film with double SrTiO<sub>3</sub> buffer layers on Pt/Ti/SiO<sub>2</sub>/Si substrate'. Together they form a unique fingerprint.

  • Cite this