Room temperature ferroelectric property of BiMnO3 thin film with double SrTiO3 buffer layers on Pt/Ti/SiO2/Si substrate

J. Y. Son, C. S. Park, Hyungjun Kim

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

We fabricated high quality BiMnO3 thin films with double SrTiO3 buffer layers on Pt/Ti/SiO2/Si substrates, in which the SrTiO3 buffer layers were used for the reduction of leakage current in BiMnO3 thin films. We chose an SrTiO3 thickness of about 5 nm, which was obtained by the fitting of ellipsometer data. We confirmed a remarkable enhancement in leakage current. BiMnO3 thin films exhibited a ferromagnetic transition with Curie temperature of about 105 K. The BiMnO3 thin film also showed a good ferroelectric property with a remnant polarization of about 9 μC/cm2.

Original languageEnglish
Pages (from-to)289-292
Number of pages4
JournalMetals and Materials International
Volume16
Issue number2
DOIs
Publication statusPublished - 2010 Apr 1

Fingerprint

Buffer layers
Ferroelectric materials
buffers
Thin films
room temperature
Substrates
thin films
Leakage currents
leakage
Temperature
ellipsometers
Curie temperature
Polarization
strontium titanium oxide
augmentation
polarization

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Mechanics of Materials
  • Metals and Alloys
  • Materials Chemistry

Cite this

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abstract = "We fabricated high quality BiMnO3 thin films with double SrTiO3 buffer layers on Pt/Ti/SiO2/Si substrates, in which the SrTiO3 buffer layers were used for the reduction of leakage current in BiMnO3 thin films. We chose an SrTiO3 thickness of about 5 nm, which was obtained by the fitting of ellipsometer data. We confirmed a remarkable enhancement in leakage current. BiMnO3 thin films exhibited a ferromagnetic transition with Curie temperature of about 105 K. The BiMnO3 thin film also showed a good ferroelectric property with a remnant polarization of about 9 μC/cm2.",
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Room temperature ferroelectric property of BiMnO3 thin film with double SrTiO3 buffer layers on Pt/Ti/SiO2/Si substrate. / Son, J. Y.; Park, C. S.; Kim, Hyungjun.

In: Metals and Materials International, Vol. 16, No. 2, 01.04.2010, p. 289-292.

Research output: Contribution to journalArticle

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AB - We fabricated high quality BiMnO3 thin films with double SrTiO3 buffer layers on Pt/Ti/SiO2/Si substrates, in which the SrTiO3 buffer layers were used for the reduction of leakage current in BiMnO3 thin films. We chose an SrTiO3 thickness of about 5 nm, which was obtained by the fitting of ellipsometer data. We confirmed a remarkable enhancement in leakage current. BiMnO3 thin films exhibited a ferromagnetic transition with Curie temperature of about 105 K. The BiMnO3 thin film also showed a good ferroelectric property with a remnant polarization of about 9 μC/cm2.

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