Abstract
We report on the crystal structures, magnetic and magnetotransport properties of epitaxial (Ga1-xMnx)N films with low Mn concentration (x = 0.06-0.5%) grown by plasma-enhanced molecular beam epitaxy, exhibiting n-type conductivity and ferromagnetism with Curie temperature in the range 550-700 K. Transmission electron microscopy studies revealed that Mn ions substitute for Ga ions in the epitaxial structure, leading to the expansion of the lattice parameter a of the hexagonal (wurtzite) structure. The temperature dependence of the sheet resistance is found to show negative magnetoresistance in the temperature range 4-300 K, indicative of ferromagnetic semiconducting (Ga,Mn)N films.
Original language | English |
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Pages (from-to) | 11-14 |
Number of pages | 4 |
Journal | Solid State Communications |
Volume | 124 |
Issue number | 1-2 |
DOIs | |
Publication status | Published - 2002 Sep |
Bibliographical note
Funding Information:This work was supported by the Korea Basic Science Institute Grant (R23-2001-00020), the KIST Vision 21 Program, and the KRCF (Quantum Dots-Functional Devices). We thank Y.D. Park for helpful discussions.
All Science Journal Classification (ASJC) codes
- Chemistry(all)
- Condensed Matter Physics
- Materials Chemistry