Room temperature ferromagnetic (Ga,Mn)N epitaxial films with low Mn concentration grown by plasma-enhanced molecular beam epitaxy

M. C. Park; K. S. Huh; J. M. Myoung; J. M. Lee; J. Y. Chang; K. I. Lee; S. H. Han; W. Y. Lee

doi:10.1016/S0038-1098(02)00471-4

Room temperature ferromagnetic (Ga,Mn)N epitaxial films with low Mn concentration grown by plasma-enhanced molecular beam epitaxy

M. C. Park, K. S. Huh, J. M. Myoung, J. M. Lee, J. Y. Chang, K. I. Lee, S. H. Han, W. Y. Lee

Department of Materials Science and Engineering

Research output: Contribution to journal › Article

42 Citations (Scopus)

Abstract

We report on the crystal structures, magnetic and magnetotransport properties of epitaxial (Ga_1-xMn_x)N films with low Mn concentration (x = 0.06-0.5%) grown by plasma-enhanced molecular beam epitaxy, exhibiting n-type conductivity and ferromagnetism with Curie temperature in the range 550-700 K. Transmission electron microscopy studies revealed that Mn ions substitute for Ga ions in the epitaxial structure, leading to the expansion of the lattice parameter a of the hexagonal (wurtzite) structure. The temperature dependence of the sheet resistance is found to show negative magnetoresistance in the temperature range 4-300 K, indicative of ferromagnetic semiconducting (Ga,Mn)N films.

Original language	English
Pages (from-to)	11-14
Number of pages	4
Journal	Solid State Communications
Volume	124
Issue number	1-2
DOIs	https://doi.org/10.1016/S0038-1098(02)00471-4
Publication status	Published - 2002 Sep 1

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All Science Journal Classification (ASJC) codes

Chemistry(all)
Condensed Matter Physics
Materials Chemistry

Cite this

Park, M. C., Huh, K. S., Myoung, J. M., Lee, J. M., Chang, J. Y., Lee, K. I., Han, S. H., & Lee, W. Y. (2002). Room temperature ferromagnetic (Ga,Mn)N epitaxial films with low Mn concentration grown by plasma-enhanced molecular beam epitaxy. Solid State Communications, 124(1-2), 11-14. https://doi.org/10.1016/S0038-1098(02)00471-4

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title = "Room temperature ferromagnetic (Ga,Mn)N epitaxial films with low Mn concentration grown by plasma-enhanced molecular beam epitaxy",

abstract = "We report on the crystal structures, magnetic and magnetotransport properties of epitaxial (Ga1-xMnx)N films with low Mn concentration (x = 0.06-0.5%) grown by plasma-enhanced molecular beam epitaxy, exhibiting n-type conductivity and ferromagnetism with Curie temperature in the range 550-700 K. Transmission electron microscopy studies revealed that Mn ions substitute for Ga ions in the epitaxial structure, leading to the expansion of the lattice parameter a of the hexagonal (wurtzite) structure. The temperature dependence of the sheet resistance is found to show negative magnetoresistance in the temperature range 4-300 K, indicative of ferromagnetic semiconducting (Ga,Mn)N films.",

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AU - Park, M. C.

AU - Huh, K. S.

AU - Myoung, J. M.

AU - Lee, J. M.

AU - Chang, J. Y.

AU - Lee, K. I.

AU - Han, S. H.

AU - Lee, W. Y.

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N2 - We report on the crystal structures, magnetic and magnetotransport properties of epitaxial (Ga1-xMnx)N films with low Mn concentration (x = 0.06-0.5%) grown by plasma-enhanced molecular beam epitaxy, exhibiting n-type conductivity and ferromagnetism with Curie temperature in the range 550-700 K. Transmission electron microscopy studies revealed that Mn ions substitute for Ga ions in the epitaxial structure, leading to the expansion of the lattice parameter a of the hexagonal (wurtzite) structure. The temperature dependence of the sheet resistance is found to show negative magnetoresistance in the temperature range 4-300 K, indicative of ferromagnetic semiconducting (Ga,Mn)N films.

AB - We report on the crystal structures, magnetic and magnetotransport properties of epitaxial (Ga1-xMnx)N films with low Mn concentration (x = 0.06-0.5%) grown by plasma-enhanced molecular beam epitaxy, exhibiting n-type conductivity and ferromagnetism with Curie temperature in the range 550-700 K. Transmission electron microscopy studies revealed that Mn ions substitute for Ga ions in the epitaxial structure, leading to the expansion of the lattice parameter a of the hexagonal (wurtzite) structure. The temperature dependence of the sheet resistance is found to show negative magnetoresistance in the temperature range 4-300 K, indicative of ferromagnetic semiconducting (Ga,Mn)N films.

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10.1016/S0038-1098(02)00471-4