Room temperature ferromagnetic (Ga,Mn)N epitaxial films with low Mn concentration grown by plasma-enhanced molecular beam epitaxy

M. C. Park, K. S. Huh, J. M. Myoung, J. M. Lee, J. Y. Chang, K. I. Lee, S. H. Han, W. Y. Lee

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Abstract

We report on the crystal structures, magnetic and magnetotransport properties of epitaxial (Ga1-xMnx)N films with low Mn concentration (x = 0.06-0.5%) grown by plasma-enhanced molecular beam epitaxy, exhibiting n-type conductivity and ferromagnetism with Curie temperature in the range 550-700 K. Transmission electron microscopy studies revealed that Mn ions substitute for Ga ions in the epitaxial structure, leading to the expansion of the lattice parameter a of the hexagonal (wurtzite) structure. The temperature dependence of the sheet resistance is found to show negative magnetoresistance in the temperature range 4-300 K, indicative of ferromagnetic semiconducting (Ga,Mn)N films.

Original languageEnglish
Pages (from-to)11-14
Number of pages4
JournalSolid State Communications
Volume124
Issue number1-2
DOIs
Publication statusPublished - 2002 Sep 1

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All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry

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