Room temperature ferromagnetic (Ga,Mn)N epitaxial films with low Mn concentration grown by plasma-enhanced molecular beam epitaxy

M. C. Park; K. S. Huh; J. M. Myoung; J. M. Lee; J. Y. Chang; K. I. Lee; S. H. Han; W. Y. Lee

doi:10.1016/S0038-1098(02)00471-4

Room temperature ferromagnetic (Ga,Mn)N epitaxial films with low Mn concentration grown by plasma-enhanced molecular beam epitaxy

M. C. Park, K. S. Huh, J. M. Myoung, J. M. Lee, J. Y. Chang, K. I. Lee, S. H. Han, W. Y. Lee

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

42 Citations (Scopus)

Abstract

We report on the crystal structures, magnetic and magnetotransport properties of epitaxial (Ga_1-xMn_x)N films with low Mn concentration (x = 0.06-0.5%) grown by plasma-enhanced molecular beam epitaxy, exhibiting n-type conductivity and ferromagnetism with Curie temperature in the range 550-700 K. Transmission electron microscopy studies revealed that Mn ions substitute for Ga ions in the epitaxial structure, leading to the expansion of the lattice parameter a of the hexagonal (wurtzite) structure. The temperature dependence of the sheet resistance is found to show negative magnetoresistance in the temperature range 4-300 K, indicative of ferromagnetic semiconducting (Ga,Mn)N films.

Original language	English
Pages (from-to)	11-14
Number of pages	4
Journal	Solid State Communications
Volume	124
Issue number	1-2
DOIs	https://doi.org/10.1016/S0038-1098(02)00471-4
Publication status	Published - 2002 Sep

Bibliographical note

Funding Information:
This work was supported by the Korea Basic Science Institute Grant (R23-2001-00020), the KIST Vision 21 Program, and the KRCF (Quantum Dots-Functional Devices). We thank Y.D. Park for helpful discussions.

All Science Journal Classification (ASJC) codes

Chemistry(all)
Condensed Matter Physics
Materials Chemistry

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10.1016/S0038-1098(02)00471-4

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@article{0730eb71ba8e4d7f9c023ac3c23d75e9,

title = "Room temperature ferromagnetic (Ga,Mn)N epitaxial films with low Mn concentration grown by plasma-enhanced molecular beam epitaxy",

abstract = "We report on the crystal structures, magnetic and magnetotransport properties of epitaxial (Ga1-xMnx)N films with low Mn concentration (x = 0.06-0.5%) grown by plasma-enhanced molecular beam epitaxy, exhibiting n-type conductivity and ferromagnetism with Curie temperature in the range 550-700 K. Transmission electron microscopy studies revealed that Mn ions substitute for Ga ions in the epitaxial structure, leading to the expansion of the lattice parameter a of the hexagonal (wurtzite) structure. The temperature dependence of the sheet resistance is found to show negative magnetoresistance in the temperature range 4-300 K, indicative of ferromagnetic semiconducting (Ga,Mn)N films.",

author = "Park, {M. C.} and Huh, {K. S.} and Myoung, {J. M.} and Lee, {J. M.} and Chang, {J. Y.} and Lee, {K. I.} and Han, {S. H.} and Lee, {W. Y.}",

note = "Funding Information: This work was supported by the Korea Basic Science Institute Grant (R23-2001-00020), the KIST Vision 21 Program, and the KRCF (Quantum Dots-Functional Devices). We thank Y.D. Park for helpful discussions.",

year = "2002",

month = sep,

doi = "10.1016/S0038-1098(02)00471-4",

language = "English",

volume = "124",

pages = "11--14",

journal = "Solid State Communications",

issn = "0038-1098",

publisher = "Elsevier Limited",

number = "1-2",

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TY - JOUR

T1 - Room temperature ferromagnetic (Ga,Mn)N epitaxial films with low Mn concentration grown by plasma-enhanced molecular beam epitaxy

AU - Park, M. C.

AU - Huh, K. S.

AU - Myoung, J. M.

AU - Lee, J. M.

AU - Chang, J. Y.

AU - Lee, K. I.

AU - Han, S. H.

AU - Lee, W. Y.

N1 - Funding Information: This work was supported by the Korea Basic Science Institute Grant (R23-2001-00020), the KIST Vision 21 Program, and the KRCF (Quantum Dots-Functional Devices). We thank Y.D. Park for helpful discussions.

PY - 2002/9

Y1 - 2002/9

N2 - We report on the crystal structures, magnetic and magnetotransport properties of epitaxial (Ga1-xMnx)N films with low Mn concentration (x = 0.06-0.5%) grown by plasma-enhanced molecular beam epitaxy, exhibiting n-type conductivity and ferromagnetism with Curie temperature in the range 550-700 K. Transmission electron microscopy studies revealed that Mn ions substitute for Ga ions in the epitaxial structure, leading to the expansion of the lattice parameter a of the hexagonal (wurtzite) structure. The temperature dependence of the sheet resistance is found to show negative magnetoresistance in the temperature range 4-300 K, indicative of ferromagnetic semiconducting (Ga,Mn)N films.

AB - We report on the crystal structures, magnetic and magnetotransport properties of epitaxial (Ga1-xMnx)N films with low Mn concentration (x = 0.06-0.5%) grown by plasma-enhanced molecular beam epitaxy, exhibiting n-type conductivity and ferromagnetism with Curie temperature in the range 550-700 K. Transmission electron microscopy studies revealed that Mn ions substitute for Ga ions in the epitaxial structure, leading to the expansion of the lattice parameter a of the hexagonal (wurtzite) structure. The temperature dependence of the sheet resistance is found to show negative magnetoresistance in the temperature range 4-300 K, indicative of ferromagnetic semiconducting (Ga,Mn)N films.

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U2 - 10.1016/S0038-1098(02)00471-4

DO - 10.1016/S0038-1098(02)00471-4

M3 - Article

AN - SCOPUS:0036749557

VL - 124

SP - 11

EP - 14

JO - Solid State Communications

JF - Solid State Communications

SN - 0038-1098

IS - 1-2

ER -

Room temperature ferromagnetic (Ga,Mn)N epitaxial films with low Mn concentration grown by plasma-enhanced molecular beam epitaxy

Abstract

Bibliographical note

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