Room-temperature ferromagnetic ordering in Mn-doped ZnO thin films grown by pulsed laser deposition

W. Y. Shim, K. A. Jeon, K. I. Lee, S. Y. Lee, M. H. Jung, W. Y. Lee

Research output: Contribution to journalArticle

19 Citations (Scopus)

Abstract

The ferromagnetic ordering in Mn-doped ZnO thin films grown by pulsed laser deposition (PLD) as a function of oxygen pressure and substrate temperature has been investigated. Room-temperature ferromagnetic behaviors in the Mn-doped ZnO films grown at 700°C and 800°C under 10-1 torr in oxygen pressure were found, whereas ferromagnetic ordering in the films grown under 10-3 torr disappeared at 300 K. The large positive magnetoresistance (MR), ∼10%, was observed at 5 K at low fields and small negative MR was observed at high fields, irrespective of oxygen pressure. In particular, anomalous Hall effect (AHE) in the Mn-doped ZnO film grown at 700°C under 10-1 Torr has been observed up to 210 K. In this work, the observed AHE is believed to be further direct evidence demonstrating that the Mn-doped ZnO thin films are ferromagnetic.

Original languageEnglish
Pages (from-to)635-640
Number of pages6
JournalJournal of Electronic Materials
Volume35
Issue number4
DOIs
Publication statusPublished - 2006 Apr 1

Fingerprint

Pulsed laser deposition
pulsed laser deposition
Hall effect
Magnetoresistance
Oxygen
Thin films
room temperature
oxygen
thin films
Temperature
Substrates
temperature

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

@article{7639cc0e535341dcafbb2d7b79984719,
title = "Room-temperature ferromagnetic ordering in Mn-doped ZnO thin films grown by pulsed laser deposition",
abstract = "The ferromagnetic ordering in Mn-doped ZnO thin films grown by pulsed laser deposition (PLD) as a function of oxygen pressure and substrate temperature has been investigated. Room-temperature ferromagnetic behaviors in the Mn-doped ZnO films grown at 700°C and 800°C under 10-1 torr in oxygen pressure were found, whereas ferromagnetic ordering in the films grown under 10-3 torr disappeared at 300 K. The large positive magnetoresistance (MR), ∼10{\%}, was observed at 5 K at low fields and small negative MR was observed at high fields, irrespective of oxygen pressure. In particular, anomalous Hall effect (AHE) in the Mn-doped ZnO film grown at 700°C under 10-1 Torr has been observed up to 210 K. In this work, the observed AHE is believed to be further direct evidence demonstrating that the Mn-doped ZnO thin films are ferromagnetic.",
author = "Shim, {W. Y.} and Jeon, {K. A.} and Lee, {K. I.} and Lee, {S. Y.} and Jung, {M. H.} and Lee, {W. Y.}",
year = "2006",
month = "4",
day = "1",
doi = "10.1007/s11664-006-0112-2",
language = "English",
volume = "35",
pages = "635--640",
journal = "Journal of Electronic Materials",
issn = "0361-5235",
publisher = "Springer New York",
number = "4",

}

Room-temperature ferromagnetic ordering in Mn-doped ZnO thin films grown by pulsed laser deposition. / Shim, W. Y.; Jeon, K. A.; Lee, K. I.; Lee, S. Y.; Jung, M. H.; Lee, W. Y.

In: Journal of Electronic Materials, Vol. 35, No. 4, 01.04.2006, p. 635-640.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Room-temperature ferromagnetic ordering in Mn-doped ZnO thin films grown by pulsed laser deposition

AU - Shim, W. Y.

AU - Jeon, K. A.

AU - Lee, K. I.

AU - Lee, S. Y.

AU - Jung, M. H.

AU - Lee, W. Y.

PY - 2006/4/1

Y1 - 2006/4/1

N2 - The ferromagnetic ordering in Mn-doped ZnO thin films grown by pulsed laser deposition (PLD) as a function of oxygen pressure and substrate temperature has been investigated. Room-temperature ferromagnetic behaviors in the Mn-doped ZnO films grown at 700°C and 800°C under 10-1 torr in oxygen pressure were found, whereas ferromagnetic ordering in the films grown under 10-3 torr disappeared at 300 K. The large positive magnetoresistance (MR), ∼10%, was observed at 5 K at low fields and small negative MR was observed at high fields, irrespective of oxygen pressure. In particular, anomalous Hall effect (AHE) in the Mn-doped ZnO film grown at 700°C under 10-1 Torr has been observed up to 210 K. In this work, the observed AHE is believed to be further direct evidence demonstrating that the Mn-doped ZnO thin films are ferromagnetic.

AB - The ferromagnetic ordering in Mn-doped ZnO thin films grown by pulsed laser deposition (PLD) as a function of oxygen pressure and substrate temperature has been investigated. Room-temperature ferromagnetic behaviors in the Mn-doped ZnO films grown at 700°C and 800°C under 10-1 torr in oxygen pressure were found, whereas ferromagnetic ordering in the films grown under 10-3 torr disappeared at 300 K. The large positive magnetoresistance (MR), ∼10%, was observed at 5 K at low fields and small negative MR was observed at high fields, irrespective of oxygen pressure. In particular, anomalous Hall effect (AHE) in the Mn-doped ZnO film grown at 700°C under 10-1 Torr has been observed up to 210 K. In this work, the observed AHE is believed to be further direct evidence demonstrating that the Mn-doped ZnO thin films are ferromagnetic.

UR - http://www.scopus.com/inward/record.url?scp=33646718201&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33646718201&partnerID=8YFLogxK

U2 - 10.1007/s11664-006-0112-2

DO - 10.1007/s11664-006-0112-2

M3 - Article

AN - SCOPUS:33646718201

VL - 35

SP - 635

EP - 640

JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

SN - 0361-5235

IS - 4

ER -