Room-temperature ferromagnetic property in MnTe semiconductor thin film grown by molecular beam epitaxy

Woochul Kim, Il Jin Park, Hyung Joon Kim, Wooyoung Lee, Sam Jin Kim, Chul Sung Kim

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

MnTe layers of high crystalline quality were successfully grown on Si(111) and Al2 O3 (0001) substrates by molecular beam epitaxy. We have investigated the structure, magnetic and electric transport properties of MnTe layers by using X-ray diffraction (XRD), superconducting quantum interference device (SQUID) magnetometer, physical properties measurement system (PPMS), and X-ray photoelectron spectroscopy (XPS). Characterization of MnTe layers on Si(111) and Al2O3(0001) substrates by X-ray diffraction (XRD) revealed a hexagonal structure of polycrystalline growth for MnTe/Si(111) and epitaxial growth for MnTe/Al2O3(0001), respectively. Investigation of magnetic properties for MnTe layers showed ferromagnetic properties above room temperature unlike antiferromagnetic bulk MnTe materials. The great irreversibility between zero-field-cooling and field-cooling magnetization were observed. Apparent ferromagnetic hysteresis loops are measured at room temperature. In electro-transport measurements, the temperature dependence of resistivity revealed a noticeable semiconducting behaviors and showed a conduction via variable range hopping (VRH) at low temperature. From XPS results, we assume that the origin of ferromagnetism in samples may be due to the breaking of superexchange antiferromagnetic correlations between Mn spin moments arising from Tellurium vacancies.

Original languageEnglish
Article number4957685
Pages (from-to)2424-2427
Number of pages4
JournalIEEE Transactions on Magnetics
Volume45
Issue number6
DOIs
Publication statusPublished - 2009 Jun 1

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Molecular beam epitaxy
Semiconductor materials
Thin films
X ray photoelectron spectroscopy
Tellurium
Cooling
X ray diffraction
Temperature
Ferromagnetism
Magnetic structure
SQUIDs
Magnetometers
Substrates
Hysteresis loops
Epitaxial growth
Transport properties
Vacancies
Magnetization
Magnetic properties
Physical properties

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Kim, Woochul ; Park, Il Jin ; Kim, Hyung Joon ; Lee, Wooyoung ; Kim, Sam Jin ; Kim, Chul Sung. / Room-temperature ferromagnetic property in MnTe semiconductor thin film grown by molecular beam epitaxy. In: IEEE Transactions on Magnetics. 2009 ; Vol. 45, No. 6. pp. 2424-2427.
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Room-temperature ferromagnetic property in MnTe semiconductor thin film grown by molecular beam epitaxy. / Kim, Woochul; Park, Il Jin; Kim, Hyung Joon; Lee, Wooyoung; Kim, Sam Jin; Kim, Chul Sung.

In: IEEE Transactions on Magnetics, Vol. 45, No. 6, 4957685, 01.06.2009, p. 2424-2427.

Research output: Contribution to journalArticle

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