Abstract
We report magnetism in Cu doped single-crystalline GaN nanowires. The typical diameter and the length of the Ga1-xCuxN nanowires (x = 0.01, 0.024) are 10-100 nm and tens of micrometers, respectively. The saturation magnetic moments are measured to be higher than 0.86 μB/Cu at 300 K, and the Curie temperatures are far above room temperature. Anomalous X-ray scattering and X-ray diffraction measurement make it clear that Cu atoms substitute the Ga sites, and they largely take part in the wurtzite network of host GaN. X-ray absorption and X-ray magnetic circular dichroism spectra at Cu L2,3 edges show that doped Cu has local magnetic moment and the electronic configuration of it is mainly 3d9 but mixed with a small portion of trivalent component. It seems that the ionocovalent bonding nature of Cu 3d orbital with surrounding semiconductor medium makes Cu atom a mixed electron configuration and local magnetic moments. These outcomes suggest that the Ga1-xCuxN system is a room-temperature ferromagnetic semiconductor.
| Original language | English |
|---|---|
| Pages (from-to) | 3366-3371 |
| Number of pages | 6 |
| Journal | Nano Letters |
| Volume | 7 |
| Issue number | 11 |
| DOIs | |
| Publication status | Published - 2007 Nov 1 |
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All Science Journal Classification (ASJC) codes
- Bioengineering
- Chemistry(all)
- Materials Science(all)
- Condensed Matter Physics
- Mechanical Engineering
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Room-temperature ferromagnetism in Cu doped GaN nanowires. / Seong, Han Kyu; Kim, Jae Young; Kim, Ju Jin; Lee, Seung Cheol; Kim, So Ra; Kim, Ungkil; Park, Tae Eon; Choi, Heon-Jin.
In: Nano Letters, Vol. 7, No. 11, 01.11.2007, p. 3366-3371.Research output: Contribution to journal › Article
TY - JOUR
T1 - Room-temperature ferromagnetism in Cu doped GaN nanowires
AU - Seong, Han Kyu
AU - Kim, Jae Young
AU - Kim, Ju Jin
AU - Lee, Seung Cheol
AU - Kim, So Ra
AU - Kim, Ungkil
AU - Park, Tae Eon
AU - Choi, Heon-Jin
PY - 2007/11/1
Y1 - 2007/11/1
N2 - We report magnetism in Cu doped single-crystalline GaN nanowires. The typical diameter and the length of the Ga1-xCuxN nanowires (x = 0.01, 0.024) are 10-100 nm and tens of micrometers, respectively. The saturation magnetic moments are measured to be higher than 0.86 μB/Cu at 300 K, and the Curie temperatures are far above room temperature. Anomalous X-ray scattering and X-ray diffraction measurement make it clear that Cu atoms substitute the Ga sites, and they largely take part in the wurtzite network of host GaN. X-ray absorption and X-ray magnetic circular dichroism spectra at Cu L2,3 edges show that doped Cu has local magnetic moment and the electronic configuration of it is mainly 3d9 but mixed with a small portion of trivalent component. It seems that the ionocovalent bonding nature of Cu 3d orbital with surrounding semiconductor medium makes Cu atom a mixed electron configuration and local magnetic moments. These outcomes suggest that the Ga1-xCuxN system is a room-temperature ferromagnetic semiconductor.
AB - We report magnetism in Cu doped single-crystalline GaN nanowires. The typical diameter and the length of the Ga1-xCuxN nanowires (x = 0.01, 0.024) are 10-100 nm and tens of micrometers, respectively. The saturation magnetic moments are measured to be higher than 0.86 μB/Cu at 300 K, and the Curie temperatures are far above room temperature. Anomalous X-ray scattering and X-ray diffraction measurement make it clear that Cu atoms substitute the Ga sites, and they largely take part in the wurtzite network of host GaN. X-ray absorption and X-ray magnetic circular dichroism spectra at Cu L2,3 edges show that doped Cu has local magnetic moment and the electronic configuration of it is mainly 3d9 but mixed with a small portion of trivalent component. It seems that the ionocovalent bonding nature of Cu 3d orbital with surrounding semiconductor medium makes Cu atom a mixed electron configuration and local magnetic moments. These outcomes suggest that the Ga1-xCuxN system is a room-temperature ferromagnetic semiconductor.
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U2 - 10.1021/nl0716552
DO - 10.1021/nl0716552
M3 - Article
VL - 7
SP - 3366
EP - 3371
JO - Nano Letters
JF - Nano Letters
SN - 1530-6984
IS - 11
ER -