Room-temperature ferromagnetism in Cu doped GaN nanowires

Han Kyu Seong, Jae Young Kim, Ju Jin Kim, Seung Cheol Lee, So Ra Kim, Ungkil Kim, Tae Eon Park, Heon Jin Choi

Research output: Contribution to journalArticle

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Abstract

We report magnetism in Cu doped single-crystalline GaN nanowires. The typical diameter and the length of the Ga1-xCuxN nanowires (x = 0.01, 0.024) are 10-100 nm and tens of micrometers, respectively. The saturation magnetic moments are measured to be higher than 0.86 μB/Cu at 300 K, and the Curie temperatures are far above room temperature. Anomalous X-ray scattering and X-ray diffraction measurement make it clear that Cu atoms substitute the Ga sites, and they largely take part in the wurtzite network of host GaN. X-ray absorption and X-ray magnetic circular dichroism spectra at Cu L2,3 edges show that doped Cu has local magnetic moment and the electronic configuration of it is mainly 3d9 but mixed with a small portion of trivalent component. It seems that the ionocovalent bonding nature of Cu 3d orbital with surrounding semiconductor medium makes Cu atom a mixed electron configuration and local magnetic moments. These outcomes suggest that the Ga1-xCuxN system is a room-temperature ferromagnetic semiconductor.

Original languageEnglish
Pages (from-to)3366-3371
Number of pages6
JournalNano letters
Volume7
Issue number11
DOIs
Publication statusPublished - 2007 Nov 1

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Ferromagnetism
Magnetic moments
ferromagnetism
Nanowires
nanowires
magnetic moments
room temperature
Semiconductor materials
Atoms
x rays
X ray absorption
Dichroism
Magnetism
Curie temperature
X ray scattering
Temperature
configurations
wurtzite
dichroism
Crystalline materials

All Science Journal Classification (ASJC) codes

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering

Cite this

Seong, H. K., Kim, J. Y., Kim, J. J., Lee, S. C., Kim, S. R., Kim, U., ... Choi, H. J. (2007). Room-temperature ferromagnetism in Cu doped GaN nanowires. Nano letters, 7(11), 3366-3371. https://doi.org/10.1021/nl0716552
Seong, Han Kyu ; Kim, Jae Young ; Kim, Ju Jin ; Lee, Seung Cheol ; Kim, So Ra ; Kim, Ungkil ; Park, Tae Eon ; Choi, Heon Jin. / Room-temperature ferromagnetism in Cu doped GaN nanowires. In: Nano letters. 2007 ; Vol. 7, No. 11. pp. 3366-3371.
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Seong, HK, Kim, JY, Kim, JJ, Lee, SC, Kim, SR, Kim, U, Park, TE & Choi, HJ 2007, 'Room-temperature ferromagnetism in Cu doped GaN nanowires', Nano letters, vol. 7, no. 11, pp. 3366-3371. https://doi.org/10.1021/nl0716552

Room-temperature ferromagnetism in Cu doped GaN nanowires. / Seong, Han Kyu; Kim, Jae Young; Kim, Ju Jin; Lee, Seung Cheol; Kim, So Ra; Kim, Ungkil; Park, Tae Eon; Choi, Heon Jin.

In: Nano letters, Vol. 7, No. 11, 01.11.2007, p. 3366-3371.

Research output: Contribution to journalArticle

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AU - Kim, Ungkil

AU - Park, Tae Eon

AU - Choi, Heon Jin

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N2 - We report magnetism in Cu doped single-crystalline GaN nanowires. The typical diameter and the length of the Ga1-xCuxN nanowires (x = 0.01, 0.024) are 10-100 nm and tens of micrometers, respectively. The saturation magnetic moments are measured to be higher than 0.86 μB/Cu at 300 K, and the Curie temperatures are far above room temperature. Anomalous X-ray scattering and X-ray diffraction measurement make it clear that Cu atoms substitute the Ga sites, and they largely take part in the wurtzite network of host GaN. X-ray absorption and X-ray magnetic circular dichroism spectra at Cu L2,3 edges show that doped Cu has local magnetic moment and the electronic configuration of it is mainly 3d9 but mixed with a small portion of trivalent component. It seems that the ionocovalent bonding nature of Cu 3d orbital with surrounding semiconductor medium makes Cu atom a mixed electron configuration and local magnetic moments. These outcomes suggest that the Ga1-xCuxN system is a room-temperature ferromagnetic semiconductor.

AB - We report magnetism in Cu doped single-crystalline GaN nanowires. The typical diameter and the length of the Ga1-xCuxN nanowires (x = 0.01, 0.024) are 10-100 nm and tens of micrometers, respectively. The saturation magnetic moments are measured to be higher than 0.86 μB/Cu at 300 K, and the Curie temperatures are far above room temperature. Anomalous X-ray scattering and X-ray diffraction measurement make it clear that Cu atoms substitute the Ga sites, and they largely take part in the wurtzite network of host GaN. X-ray absorption and X-ray magnetic circular dichroism spectra at Cu L2,3 edges show that doped Cu has local magnetic moment and the electronic configuration of it is mainly 3d9 but mixed with a small portion of trivalent component. It seems that the ionocovalent bonding nature of Cu 3d orbital with surrounding semiconductor medium makes Cu atom a mixed electron configuration and local magnetic moments. These outcomes suggest that the Ga1-xCuxN system is a room-temperature ferromagnetic semiconductor.

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Seong HK, Kim JY, Kim JJ, Lee SC, Kim SR, Kim U et al. Room-temperature ferromagnetism in Cu doped GaN nanowires. Nano letters. 2007 Nov 1;7(11):3366-3371. https://doi.org/10.1021/nl0716552