Room-temperature ferromagnetism in Cu doped GaN nanowires

Han Kyu Seong, Jae Young Kim, Ju Jin Kim, Seung Cheol Lee, So Ra Kim, Ungkil Kim, Tae Eon Park, Heon-Jin Choi

Research output: Contribution to journalArticle

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Abstract

We report magnetism in Cu doped single-crystalline GaN nanowires. The typical diameter and the length of the Ga1-xCuxN nanowires (x = 0.01, 0.024) are 10-100 nm and tens of micrometers, respectively. The saturation magnetic moments are measured to be higher than 0.86 μB/Cu at 300 K, and the Curie temperatures are far above room temperature. Anomalous X-ray scattering and X-ray diffraction measurement make it clear that Cu atoms substitute the Ga sites, and they largely take part in the wurtzite network of host GaN. X-ray absorption and X-ray magnetic circular dichroism spectra at Cu L2,3 edges show that doped Cu has local magnetic moment and the electronic configuration of it is mainly 3d9 but mixed with a small portion of trivalent component. It seems that the ionocovalent bonding nature of Cu 3d orbital with surrounding semiconductor medium makes Cu atom a mixed electron configuration and local magnetic moments. These outcomes suggest that the Ga1-xCuxN system is a room-temperature ferromagnetic semiconductor.

Original languageEnglish
Pages (from-to)3366-3371
Number of pages6
JournalNano Letters
Volume7
Issue number11
DOIs
Publication statusPublished - 2007 Nov 1

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Ferromagnetism
Magnetic moments
ferromagnetism
Nanowires
nanowires
magnetic moments
room temperature
Semiconductor materials
Atoms
x rays
X ray absorption
Dichroism
Magnetism
Curie temperature
X ray scattering
Temperature
configurations
wurtzite
dichroism
Crystalline materials

All Science Journal Classification (ASJC) codes

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering

Cite this

Seong, H. K., Kim, J. Y., Kim, J. J., Lee, S. C., Kim, S. R., Kim, U., ... Choi, H-J. (2007). Room-temperature ferromagnetism in Cu doped GaN nanowires. Nano Letters, 7(11), 3366-3371. https://doi.org/10.1021/nl0716552
Seong, Han Kyu ; Kim, Jae Young ; Kim, Ju Jin ; Lee, Seung Cheol ; Kim, So Ra ; Kim, Ungkil ; Park, Tae Eon ; Choi, Heon-Jin. / Room-temperature ferromagnetism in Cu doped GaN nanowires. In: Nano Letters. 2007 ; Vol. 7, No. 11. pp. 3366-3371.
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Seong, HK, Kim, JY, Kim, JJ, Lee, SC, Kim, SR, Kim, U, Park, TE & Choi, H-J 2007, 'Room-temperature ferromagnetism in Cu doped GaN nanowires', Nano Letters, vol. 7, no. 11, pp. 3366-3371. https://doi.org/10.1021/nl0716552

Room-temperature ferromagnetism in Cu doped GaN nanowires. / Seong, Han Kyu; Kim, Jae Young; Kim, Ju Jin; Lee, Seung Cheol; Kim, So Ra; Kim, Ungkil; Park, Tae Eon; Choi, Heon-Jin.

In: Nano Letters, Vol. 7, No. 11, 01.11.2007, p. 3366-3371.

Research output: Contribution to journalArticle

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AU - Kim, Ungkil

AU - Park, Tae Eon

AU - Choi, Heon-Jin

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N2 - We report magnetism in Cu doped single-crystalline GaN nanowires. The typical diameter and the length of the Ga1-xCuxN nanowires (x = 0.01, 0.024) are 10-100 nm and tens of micrometers, respectively. The saturation magnetic moments are measured to be higher than 0.86 μB/Cu at 300 K, and the Curie temperatures are far above room temperature. Anomalous X-ray scattering and X-ray diffraction measurement make it clear that Cu atoms substitute the Ga sites, and they largely take part in the wurtzite network of host GaN. X-ray absorption and X-ray magnetic circular dichroism spectra at Cu L2,3 edges show that doped Cu has local magnetic moment and the electronic configuration of it is mainly 3d9 but mixed with a small portion of trivalent component. It seems that the ionocovalent bonding nature of Cu 3d orbital with surrounding semiconductor medium makes Cu atom a mixed electron configuration and local magnetic moments. These outcomes suggest that the Ga1-xCuxN system is a room-temperature ferromagnetic semiconductor.

AB - We report magnetism in Cu doped single-crystalline GaN nanowires. The typical diameter and the length of the Ga1-xCuxN nanowires (x = 0.01, 0.024) are 10-100 nm and tens of micrometers, respectively. The saturation magnetic moments are measured to be higher than 0.86 μB/Cu at 300 K, and the Curie temperatures are far above room temperature. Anomalous X-ray scattering and X-ray diffraction measurement make it clear that Cu atoms substitute the Ga sites, and they largely take part in the wurtzite network of host GaN. X-ray absorption and X-ray magnetic circular dichroism spectra at Cu L2,3 edges show that doped Cu has local magnetic moment and the electronic configuration of it is mainly 3d9 but mixed with a small portion of trivalent component. It seems that the ionocovalent bonding nature of Cu 3d orbital with surrounding semiconductor medium makes Cu atom a mixed electron configuration and local magnetic moments. These outcomes suggest that the Ga1-xCuxN system is a room-temperature ferromagnetic semiconductor.

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Seong HK, Kim JY, Kim JJ, Lee SC, Kim SR, Kim U et al. Room-temperature ferromagnetism in Cu doped GaN nanowires. Nano Letters. 2007 Nov 1;7(11):3366-3371. https://doi.org/10.1021/nl0716552