Abstract
We report magnetism in Cu doped single-crystalline GaN nanowires. The typical diameter and the length of the Ga1-xCuxN nanowires (x = 0.01, 0.024) are 10-100 nm and tens of micrometers, respectively. The saturation magnetic moments are measured to be higher than 0.86 μB/Cu at 300 K, and the Curie temperatures are far above room temperature. Anomalous X-ray scattering and X-ray diffraction measurement make it clear that Cu atoms substitute the Ga sites, and they largely take part in the wurtzite network of host GaN. X-ray absorption and X-ray magnetic circular dichroism spectra at Cu L2,3 edges show that doped Cu has local magnetic moment and the electronic configuration of it is mainly 3d9 but mixed with a small portion of trivalent component. It seems that the ionocovalent bonding nature of Cu 3d orbital with surrounding semiconductor medium makes Cu atom a mixed electron configuration and local magnetic moments. These outcomes suggest that the Ga1-xCuxN system is a room-temperature ferromagnetic semiconductor.
Original language | English |
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Pages (from-to) | 3366-3371 |
Number of pages | 6 |
Journal | Nano letters |
Volume | 7 |
Issue number | 11 |
DOIs | |
Publication status | Published - 2007 Nov |
All Science Journal Classification (ASJC) codes
- Bioengineering
- Chemistry(all)
- Materials Science(all)
- Condensed Matter Physics
- Mechanical Engineering