Room-temperature ferromagnetism in Cu doped GaN nanowires

Han Kyu Seong, Jae Young Kim, Ju Jin Kim, Seung Cheol Lee, So Ra Kim, Ungkil Kim, Tae Eon Park, Heon Jin Choi

Research output: Contribution to journalArticlepeer-review

92 Citations (Scopus)


We report magnetism in Cu doped single-crystalline GaN nanowires. The typical diameter and the length of the Ga1-xCuxN nanowires (x = 0.01, 0.024) are 10-100 nm and tens of micrometers, respectively. The saturation magnetic moments are measured to be higher than 0.86 μB/Cu at 300 K, and the Curie temperatures are far above room temperature. Anomalous X-ray scattering and X-ray diffraction measurement make it clear that Cu atoms substitute the Ga sites, and they largely take part in the wurtzite network of host GaN. X-ray absorption and X-ray magnetic circular dichroism spectra at Cu L2,3 edges show that doped Cu has local magnetic moment and the electronic configuration of it is mainly 3d9 but mixed with a small portion of trivalent component. It seems that the ionocovalent bonding nature of Cu 3d orbital with surrounding semiconductor medium makes Cu atom a mixed electron configuration and local magnetic moments. These outcomes suggest that the Ga1-xCuxN system is a room-temperature ferromagnetic semiconductor.

Original languageEnglish
Pages (from-to)3366-3371
Number of pages6
JournalNano letters
Issue number11
Publication statusPublished - 2007 Nov

All Science Journal Classification (ASJC) codes

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering


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