Room-temperature ferromagnetism of (Ga,Mn)N films: Effects of Ga flux and growth temperature

Kwang Soo Huh, Moon Ho Ham, Min Chang Jeong, Jae Min Myoung

Research output: Contribution to journalArticle

Abstract

We discuss that the effects of Ga flux and growth temperature on ferromagnetic properties of (Ga,Mn)N films grown on sapphire substrate by plasma-enhanced molecular beam epitaxy. The (Ga,Mn)N thin films exhibited ferromagnetic ordering at room temperature without any secondary phases verified by X-ray diffraction. It is found that the magnetic properties of the films are improved with decreasing Ga flux. It is also observed that saturation magnetization increases with decreasing the (Ga,Mn)N film growth temperature.

Original languageEnglish
Pages (from-to)85-90
Number of pages6
JournalJournal of Crystal Growth
Volume260
Issue number1-2
DOIs
Publication statusPublished - 2004 Jan 2

Fingerprint

Ferromagnetism
Growth temperature
ferromagnetism
Fluxes
Aluminum Oxide
room temperature
Film growth
Saturation magnetization
Molecular beam epitaxy
Sapphire
Magnetic properties
Plasmas
X ray diffraction
Thin films
Temperature
temperature
sapphire
Substrates
molecular beam epitaxy
magnetic properties

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

Cite this

Huh, Kwang Soo ; Ham, Moon Ho ; Jeong, Min Chang ; Myoung, Jae Min. / Room-temperature ferromagnetism of (Ga,Mn)N films : Effects of Ga flux and growth temperature. In: Journal of Crystal Growth. 2004 ; Vol. 260, No. 1-2. pp. 85-90.
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Room-temperature ferromagnetism of (Ga,Mn)N films : Effects of Ga flux and growth temperature. / Huh, Kwang Soo; Ham, Moon Ho; Jeong, Min Chang; Myoung, Jae Min.

In: Journal of Crystal Growth, Vol. 260, No. 1-2, 02.01.2004, p. 85-90.

Research output: Contribution to journalArticle

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