Room-temperature ferromagnetism of (Ga,Mn)N films: Effects of Ga flux and growth temperature

Kwang Soo Huh, Moon Ho Ham, Min Chang Jeong, Jae Min Myoung

Research output: Contribution to journalArticle

Abstract

We discuss that the effects of Ga flux and growth temperature on ferromagnetic properties of (Ga,Mn)N films grown on sapphire substrate by plasma-enhanced molecular beam epitaxy. The (Ga,Mn)N thin films exhibited ferromagnetic ordering at room temperature without any secondary phases verified by X-ray diffraction. It is found that the magnetic properties of the films are improved with decreasing Ga flux. It is also observed that saturation magnetization increases with decreasing the (Ga,Mn)N film growth temperature.

Original languageEnglish
Pages (from-to)85-90
Number of pages6
JournalJournal of Crystal Growth
Volume260
Issue number1-2
DOIs
Publication statusPublished - 2004 Jan 2

Bibliographical note

Funding Information:
This work was supported by the Korea Basic Science Institute Grant and Yonsei University Research Board. The authors thank W.Y. Lee for assistance with the alternating gradient magnetometer.

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

Fingerprint Dive into the research topics of 'Room-temperature ferromagnetism of (Ga,Mn)N films: Effects of Ga flux and growth temperature'. Together they form a unique fingerprint.

Cite this