Room-temperature ferromagnetism of Mg and Mn co-doped GaN films grown by PEMBE

Min Chang Jeong; Moon Ho Ham; Jae Min Myoung; Sam Kyu Noh

doi:10.1016/j.apsusc.2003.09.001

Room-temperature ferromagnetism of Mg and Mn co-doped GaN films grown by PEMBE

Min Chang Jeong, Moon Ho Ham, Jae Min Myoung, Sam Kyu Noh

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

The magnetic properties of the epitaxial Mg and Mn co-doped GaN films with low Mg and Mn concentrations grown by plasma-enhanced molecular beam epitay (PEMBE) are reported. Surface morphology was smoother as Mn effusion cell temperature increased. Room-temperature ferromagnetic ordering was observed. The saturation magnetization (M _s ) of the films increased as Mn effusion cell temperature (T _Mn ) increased. Saturation magnetization change was not observed with the variation of Mg effusion cell temperature, and this supports that Mg incorporation in the films is not related to ferromagnetic ordering in the films. The samples exhibit n-type conductivity with the room-temperature ferromagnetism, and the films' characteristics are determined by Mn flux at fixed growth temperature.

Original language	English
Pages (from-to)	322-326
Number of pages	5
Journal	Applied Surface Science
Volume	222
Issue number	1-4
DOIs	https://doi.org/10.1016/j.apsusc.2003.09.001
Publication status	Published - 2004 Jan 30

Bibliographical note

Funding Information:
This work was supported by the Korea Research Institute of Standards and Science through the Institute-University Cooperation Program.

All Science Journal Classification (ASJC) codes

Chemistry(all)
Condensed Matter Physics
Physics and Astronomy(all)
Surfaces and Interfaces
Surfaces, Coatings and Films

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title = "Room-temperature ferromagnetism of Mg and Mn co-doped GaN films grown by PEMBE",

abstract = " The magnetic properties of the epitaxial Mg and Mn co-doped GaN films with low Mg and Mn concentrations grown by plasma-enhanced molecular beam epitay (PEMBE) are reported. Surface morphology was smoother as Mn effusion cell temperature increased. Room-temperature ferromagnetic ordering was observed. The saturation magnetization (M s ) of the films increased as Mn effusion cell temperature (T Mn ) increased. Saturation magnetization change was not observed with the variation of Mg effusion cell temperature, and this supports that Mg incorporation in the films is not related to ferromagnetic ordering in the films. The samples exhibit n-type conductivity with the room-temperature ferromagnetism, and the films' characteristics are determined by Mn flux at fixed growth temperature.",

author = "Jeong, {Min Chang} and Ham, {Moon Ho} and Myoung, {Jae Min} and Noh, {Sam Kyu}",

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doi = "10.1016/j.apsusc.2003.09.001",

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AU - Jeong, Min Chang

AU - Ham, Moon Ho

AU - Myoung, Jae Min

AU - Noh, Sam Kyu

N1 - Funding Information: This work was supported by the Korea Research Institute of Standards and Science through the Institute-University Cooperation Program.

PY - 2004/1/30

Y1 - 2004/1/30

N2 - The magnetic properties of the epitaxial Mg and Mn co-doped GaN films with low Mg and Mn concentrations grown by plasma-enhanced molecular beam epitay (PEMBE) are reported. Surface morphology was smoother as Mn effusion cell temperature increased. Room-temperature ferromagnetic ordering was observed. The saturation magnetization (M s ) of the films increased as Mn effusion cell temperature (T Mn ) increased. Saturation magnetization change was not observed with the variation of Mg effusion cell temperature, and this supports that Mg incorporation in the films is not related to ferromagnetic ordering in the films. The samples exhibit n-type conductivity with the room-temperature ferromagnetism, and the films' characteristics are determined by Mn flux at fixed growth temperature.

AB - The magnetic properties of the epitaxial Mg and Mn co-doped GaN films with low Mg and Mn concentrations grown by plasma-enhanced molecular beam epitay (PEMBE) are reported. Surface morphology was smoother as Mn effusion cell temperature increased. Room-temperature ferromagnetic ordering was observed. The saturation magnetization (M s ) of the films increased as Mn effusion cell temperature (T Mn ) increased. Saturation magnetization change was not observed with the variation of Mg effusion cell temperature, and this supports that Mg incorporation in the films is not related to ferromagnetic ordering in the films. The samples exhibit n-type conductivity with the room-temperature ferromagnetism, and the films' characteristics are determined by Mn flux at fixed growth temperature.

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Room-temperature ferromagnetism of Mg and Mn co-doped GaN films grown by PEMBE

Abstract

Bibliographical note

All Science Journal Classification (ASJC) codes

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