TY - GEN
T1 - Room-temperature optoelectronic detection of valley-locked spin photocurrent in WSe2-graphene-Bi2Se3 heterostructures
AU - Cha, Soonyoung
AU - Noh, Minji
AU - Kim, Je Hyun
AU - Son, Jangyup
AU - Bae, Hyemin
AU - Lee, Doeon
AU - Kim, Hoil
AU - Lee, Jekwan
AU - Shin, Hoseung
AU - Sim, Sangwan
AU - Yang, Seunghoon
AU - Lee, Chul Ho
AU - Jo, Moon Ho
AU - Kim, Jun Sung
AU - Kim, Dohun
AU - Choi, Hyunyong
N1 - Publisher Copyright:
© OSA 2018.
Copyright:
Copyright 2018 Elsevier B.V., All rights reserved.
PY - 2018
Y1 - 2018
N2 - Using a lateral WSe2-graphene-Bi2Se3 heterostructure, we generate the valley-locked spin photocurrent in ion-liquid gated WSe2 transistor by the circular photogalvanic effect and extract the spin-polarized current in the Bi2Se3 topological insulator using the spin-momentum locking.
AB - Using a lateral WSe2-graphene-Bi2Se3 heterostructure, we generate the valley-locked spin photocurrent in ion-liquid gated WSe2 transistor by the circular photogalvanic effect and extract the spin-polarized current in the Bi2Se3 topological insulator using the spin-momentum locking.
UR - http://www.scopus.com/inward/record.url?scp=85048933346&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85048933346&partnerID=8YFLogxK
U2 - 10.1364/CLEO_QELS.2018.FTh1F.1
DO - 10.1364/CLEO_QELS.2018.FTh1F.1
M3 - Conference contribution
AN - SCOPUS:85048933346
T3 - Optics InfoBase Conference Papers
BT - CLEO
PB - OSA - The Optical Society
T2 - CLEO: QELS_Fundamental Science, CLEO_QELS 2018
Y2 - 13 May 2018 through 18 May 2018
ER -