We report the direct measurement of spin transport characteristics in a GaN spin valve, with a relatively defect-free single GaN nanowire (NW) as the channel and FeCo/MgO as the tunnel barrier spin contact. Hanle spin precession and non-local transport measurements are made in an unintentionally doped nanowire spin valves. Spin diffusion length and spin lifetime values of 260 nm and 100 ps, respectively, are derived. Appropriate control measurements have been made to verify spin injection, transport, and detection.
Bibliographical noteFunding Information:
The work is supported by the National Science Foundation (MRSEC program) under Grant 0968346.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)