Room temperature single GaN nanowire spin valves with FeCo/MgO tunnel contacts

Hyun Kum, Junseok Heo, Shafat Jahangir, Animesh Banerjee, Wei Guo, Pallab Bhattacharya

Research output: Contribution to journalArticlepeer-review

33 Citations (Scopus)

Abstract

We report the direct measurement of spin transport characteristics in a GaN spin valve, with a relatively defect-free single GaN nanowire (NW) as the channel and FeCo/MgO as the tunnel barrier spin contact. Hanle spin precession and non-local transport measurements are made in an unintentionally doped nanowire spin valves. Spin diffusion length and spin lifetime values of 260 nm and 100 ps, respectively, are derived. Appropriate control measurements have been made to verify spin injection, transport, and detection.

Original languageEnglish
Article number182407
JournalApplied Physics Letters
Volume100
Issue number18
DOIs
Publication statusPublished - 2012 Apr 30

Bibliographical note

Funding Information:
The work is supported by the National Science Foundation (MRSEC program) under Grant 0968346.

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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