Rotation-Misfit-Free Heteroepitaxial Stacking and Stitching Growth of Hexagonal Transition-Metal Dichalcogenide Monolayers by Nucleation Kinetics Controls

Hoseok Heo; Ji Ho Sung; Gangtae Jin; Ji Hoon Ahn; Kyungwook Kim; Myoung Jae Lee; Soonyoung Cha; Hyunyong Choi; Moon Ho Jo

doi:10.1002/adma.201500846

Rotation-Misfit-Free Heteroepitaxial Stacking and Stitching Growth of Hexagonal Transition-Metal Dichalcogenide Monolayers by Nucleation Kinetics Controls

Hoseok Heo, Ji Ho Sung, Gangtae Jin, Ji Hoon Ahn, Kyungwook Kim, Myoung Jae Lee, Soonyoung Cha, Hyunyong Choi, Moon Ho Jo

Department of Electrical and Electronic Engineering

Research output: Contribution to journal › Article › peer-review

113 Citations (Scopus)

Abstract

2D vertical stacking and lateral stitching growth of monolayer (ML) hexagonal transition-metal dichalcogenides are reported. The 2D heteroepitaxial manipulation of MoS₂ and WS₂ MLs is achieved by control of the 2D nucleation kinetics during the sequential vapor-phase growth. It enables the creation of hexagon-on-hexagon unit-cell stacking and hexagon-by-hexagon stitching without interlayer rotation misfits.

Original language	English
Pages (from-to)	3803-3810
Number of pages	8
Journal	Advanced Materials
Volume	27
Issue number	25
DOIs	https://doi.org/10.1002/adma.201500846
Publication status	Published - 2015 Jul 1

Bibliographical note

Publisher Copyright:
© 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

All Science Journal Classification (ASJC) codes

Materials Science(all)
Mechanics of Materials
Mechanical Engineering

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10.1002/adma.201500846

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title = "Rotation-Misfit-Free Heteroepitaxial Stacking and Stitching Growth of Hexagonal Transition-Metal Dichalcogenide Monolayers by Nucleation Kinetics Controls",

abstract = "2D vertical stacking and lateral stitching growth of monolayer (ML) hexagonal transition-metal dichalcogenides are reported. The 2D heteroepitaxial manipulation of MoS2 and WS2 MLs is achieved by control of the 2D nucleation kinetics during the sequential vapor-phase growth. It enables the creation of hexagon-on-hexagon unit-cell stacking and hexagon-by-hexagon stitching without interlayer rotation misfits.",

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note = "Publisher Copyright: {\textcopyright} 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.",

year = "2015",

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doi = "10.1002/adma.201500846",

language = "English",

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T1 - Rotation-Misfit-Free Heteroepitaxial Stacking and Stitching Growth of Hexagonal Transition-Metal Dichalcogenide Monolayers by Nucleation Kinetics Controls

AU - Heo, Hoseok

AU - Sung, Ji Ho

AU - Jin, Gangtae

AU - Ahn, Ji Hoon

AU - Kim, Kyungwook

AU - Lee, Myoung Jae

AU - Cha, Soonyoung

AU - Choi, Hyunyong

AU - Jo, Moon Ho

PY - 2015/7/1

Y1 - 2015/7/1

N2 - 2D vertical stacking and lateral stitching growth of monolayer (ML) hexagonal transition-metal dichalcogenides are reported. The 2D heteroepitaxial manipulation of MoS2 and WS2 MLs is achieved by control of the 2D nucleation kinetics during the sequential vapor-phase growth. It enables the creation of hexagon-on-hexagon unit-cell stacking and hexagon-by-hexagon stitching without interlayer rotation misfits.

AB - 2D vertical stacking and lateral stitching growth of monolayer (ML) hexagonal transition-metal dichalcogenides are reported. The 2D heteroepitaxial manipulation of MoS2 and WS2 MLs is achieved by control of the 2D nucleation kinetics during the sequential vapor-phase growth. It enables the creation of hexagon-on-hexagon unit-cell stacking and hexagon-by-hexagon stitching without interlayer rotation misfits.

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JO - Advanced Materials

JF - Advanced Materials

IS - 25

ER -

Rotation-Misfit-Free Heteroepitaxial Stacking and Stitching Growth of Hexagonal Transition-Metal Dichalcogenide Monolayers by Nucleation Kinetics Controls

Abstract

Bibliographical note

All Science Journal Classification (ASJC) codes

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