Rotation-Misfit-Free Heteroepitaxial Stacking and Stitching Growth of Hexagonal Transition-Metal Dichalcogenide Monolayers by Nucleation Kinetics Controls

Hoseok Heo, Ji Ho Sung, Gangtae Jin, Ji Hoon Ahn, Kyungwook Kim, Myoung Jae Lee, Soonyoung Cha, Hyunyong Choi, Moon Ho Jo

Research output: Contribution to journalArticle

67 Citations (Scopus)

Abstract

2D vertical stacking and lateral stitching growth of monolayer (ML) hexagonal transition-metal dichalcogenides are reported. The 2D heteroepitaxial manipulation of MoS2 and WS2 MLs is achieved by control of the 2D nucleation kinetics during the sequential vapor-phase growth. It enables the creation of hexagon-on-hexagon unit-cell stacking and hexagon-by-hexagon stitching without interlayer rotation misfits.

Original languageEnglish
Pages (from-to)3803-3810
Number of pages8
JournalAdvanced Materials
Volume27
Issue number25
DOIs
Publication statusPublished - 2015 Jul 1

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Transition metals
Monolayers
Nucleation
Kinetics
Vapors

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Heo, Hoseok ; Sung, Ji Ho ; Jin, Gangtae ; Ahn, Ji Hoon ; Kim, Kyungwook ; Lee, Myoung Jae ; Cha, Soonyoung ; Choi, Hyunyong ; Jo, Moon Ho. / Rotation-Misfit-Free Heteroepitaxial Stacking and Stitching Growth of Hexagonal Transition-Metal Dichalcogenide Monolayers by Nucleation Kinetics Controls. In: Advanced Materials. 2015 ; Vol. 27, No. 25. pp. 3803-3810.
@article{56abff7511384469be629d7dcc19d68c,
title = "Rotation-Misfit-Free Heteroepitaxial Stacking and Stitching Growth of Hexagonal Transition-Metal Dichalcogenide Monolayers by Nucleation Kinetics Controls",
abstract = "2D vertical stacking and lateral stitching growth of monolayer (ML) hexagonal transition-metal dichalcogenides are reported. The 2D heteroepitaxial manipulation of MoS2 and WS2 MLs is achieved by control of the 2D nucleation kinetics during the sequential vapor-phase growth. It enables the creation of hexagon-on-hexagon unit-cell stacking and hexagon-by-hexagon stitching without interlayer rotation misfits.",
author = "Hoseok Heo and Sung, {Ji Ho} and Gangtae Jin and Ahn, {Ji Hoon} and Kyungwook Kim and Lee, {Myoung Jae} and Soonyoung Cha and Hyunyong Choi and Jo, {Moon Ho}",
year = "2015",
month = "7",
day = "1",
doi = "10.1002/adma.201500846",
language = "English",
volume = "27",
pages = "3803--3810",
journal = "Advanced Materials",
issn = "0935-9648",
publisher = "Wiley-VCH Verlag",
number = "25",

}

Rotation-Misfit-Free Heteroepitaxial Stacking and Stitching Growth of Hexagonal Transition-Metal Dichalcogenide Monolayers by Nucleation Kinetics Controls. / Heo, Hoseok; Sung, Ji Ho; Jin, Gangtae; Ahn, Ji Hoon; Kim, Kyungwook; Lee, Myoung Jae; Cha, Soonyoung; Choi, Hyunyong; Jo, Moon Ho.

In: Advanced Materials, Vol. 27, No. 25, 01.07.2015, p. 3803-3810.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Rotation-Misfit-Free Heteroepitaxial Stacking and Stitching Growth of Hexagonal Transition-Metal Dichalcogenide Monolayers by Nucleation Kinetics Controls

AU - Heo, Hoseok

AU - Sung, Ji Ho

AU - Jin, Gangtae

AU - Ahn, Ji Hoon

AU - Kim, Kyungwook

AU - Lee, Myoung Jae

AU - Cha, Soonyoung

AU - Choi, Hyunyong

AU - Jo, Moon Ho

PY - 2015/7/1

Y1 - 2015/7/1

N2 - 2D vertical stacking and lateral stitching growth of monolayer (ML) hexagonal transition-metal dichalcogenides are reported. The 2D heteroepitaxial manipulation of MoS2 and WS2 MLs is achieved by control of the 2D nucleation kinetics during the sequential vapor-phase growth. It enables the creation of hexagon-on-hexagon unit-cell stacking and hexagon-by-hexagon stitching without interlayer rotation misfits.

AB - 2D vertical stacking and lateral stitching growth of monolayer (ML) hexagonal transition-metal dichalcogenides are reported. The 2D heteroepitaxial manipulation of MoS2 and WS2 MLs is achieved by control of the 2D nucleation kinetics during the sequential vapor-phase growth. It enables the creation of hexagon-on-hexagon unit-cell stacking and hexagon-by-hexagon stitching without interlayer rotation misfits.

UR - http://www.scopus.com/inward/record.url?scp=85027928601&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85027928601&partnerID=8YFLogxK

U2 - 10.1002/adma.201500846

DO - 10.1002/adma.201500846

M3 - Article

AN - SCOPUS:85027928601

VL - 27

SP - 3803

EP - 3810

JO - Advanced Materials

JF - Advanced Materials

SN - 0935-9648

IS - 25

ER -