The authors report on the rubrene polycrystalline film growth for its thin film transistor (TFT) applications. Amorphous rubrene thin film was initially obtained on 200-nm -thick Si O2 Si substrate at 40 °C in a vacuum chamber by thermal evaporation but in situ long time postannealing at the elevated temperatures of 60-80 °C transformed the amorphous phase into crystalline. Based on an optimum condition to cover the whole channel area with polycrystalline film, the authors have fabricated a rubrene TFT with a relatively high field effect mobility of 0.002 cm2 V s, an on/off ratio of ∼ 104, and a low threshold voltage of -9 V.
Bibliographical noteFunding Information:
This research was performed with the financial support from KOSEF (Program No. M1-0214-00-0228) and support from Brain Korea 21 Project.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)