Rubrene polycrystalline transistor channel achieved through in situ vacuum annealing

Se W. Park, S. H. Jeong, Jeong M. Choi, Jung Min Hwang, Jae Hoon Kim, Seongil Im

Research output: Contribution to journalArticle

35 Citations (Scopus)

Abstract

The authors report on the rubrene polycrystalline film growth for its thin film transistor (TFT) applications. Amorphous rubrene thin film was initially obtained on 200-nm -thick Si O2 Si substrate at 40 °C in a vacuum chamber by thermal evaporation but in situ long time postannealing at the elevated temperatures of 60-80 °C transformed the amorphous phase into crystalline. Based on an optimum condition to cover the whole channel area with polycrystalline film, the authors have fabricated a rubrene TFT with a relatively high field effect mobility of 0.002 cm2 V s, an on/off ratio of ∼ 104, and a low threshold voltage of -9 V.

Original languageEnglish
Article number033506
JournalApplied Physics Letters
Volume91
Issue number3
DOIs
Publication statusPublished - 2007 Aug 1

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transistors
vacuum
annealing
thin films
vacuum chambers
threshold voltage
low voltage
evaporation
temperature

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Park, Se W. ; Jeong, S. H. ; Choi, Jeong M. ; Hwang, Jung Min ; Kim, Jae Hoon ; Im, Seongil. / Rubrene polycrystalline transistor channel achieved through in situ vacuum annealing. In: Applied Physics Letters. 2007 ; Vol. 91, No. 3.
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Rubrene polycrystalline transistor channel achieved through in situ vacuum annealing. / Park, Se W.; Jeong, S. H.; Choi, Jeong M.; Hwang, Jung Min; Kim, Jae Hoon; Im, Seongil.

In: Applied Physics Letters, Vol. 91, No. 3, 033506, 01.08.2007.

Research output: Contribution to journalArticle

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