Rubrene thin-film transistors with crystalline and amorphous channels

Se W. Park, Jung Min Hwang, Jeong M. Choi, D. K. Hwang, M. S. Oh, Jae Hoon Kim, Seongil Im

Research output: Contribution to journalArticle

44 Citations (Scopus)

Abstract

The authors report on the fabrication of rubrene organic thin-film transistors (OTFTs) with crystalline and amorphous channels, which were achieved by patterning a rubrene thin film deposited under a specific condition. The deposited film was mostly covered by amorphous rubrene matrix with smooth surface except many crystalline rubrene disks embedded with rough surface. When the channel of OTFT covers some portion of crystalline disks, the OTFT displayed a typical field effect behavior while it showed little drain current with the channel covered with amorphous background. Typical field mobility obtained from OTFT with crystalline disks was 1.23 × 10-4 cm2/V s with an on/off current ratio of -103

Original languageEnglish
Article number153512
JournalApplied Physics Letters
Volume90
Issue number15
DOIs
Publication statusPublished - 2007 Apr 24

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transistors
thin films
fabrication
matrices

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Park, Se W. ; Hwang, Jung Min ; Choi, Jeong M. ; Hwang, D. K. ; Oh, M. S. ; Kim, Jae Hoon ; Im, Seongil. / Rubrene thin-film transistors with crystalline and amorphous channels. In: Applied Physics Letters. 2007 ; Vol. 90, No. 15.
@article{74449244a0b54ebdb45c5e24ebeee47a,
title = "Rubrene thin-film transistors with crystalline and amorphous channels",
abstract = "The authors report on the fabrication of rubrene organic thin-film transistors (OTFTs) with crystalline and amorphous channels, which were achieved by patterning a rubrene thin film deposited under a specific condition. The deposited film was mostly covered by amorphous rubrene matrix with smooth surface except many crystalline rubrene disks embedded with rough surface. When the channel of OTFT covers some portion of crystalline disks, the OTFT displayed a typical field effect behavior while it showed little drain current with the channel covered with amorphous background. Typical field mobility obtained from OTFT with crystalline disks was 1.23 × 10-4 cm2/V s with an on/off current ratio of -103",
author = "Park, {Se W.} and Hwang, {Jung Min} and Choi, {Jeong M.} and Hwang, {D. K.} and Oh, {M. S.} and Kim, {Jae Hoon} and Seongil Im",
year = "2007",
month = "4",
day = "24",
doi = "10.1063/1.2723656",
language = "English",
volume = "90",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "15",

}

Rubrene thin-film transistors with crystalline and amorphous channels. / Park, Se W.; Hwang, Jung Min; Choi, Jeong M.; Hwang, D. K.; Oh, M. S.; Kim, Jae Hoon; Im, Seongil.

In: Applied Physics Letters, Vol. 90, No. 15, 153512, 24.04.2007.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Rubrene thin-film transistors with crystalline and amorphous channels

AU - Park, Se W.

AU - Hwang, Jung Min

AU - Choi, Jeong M.

AU - Hwang, D. K.

AU - Oh, M. S.

AU - Kim, Jae Hoon

AU - Im, Seongil

PY - 2007/4/24

Y1 - 2007/4/24

N2 - The authors report on the fabrication of rubrene organic thin-film transistors (OTFTs) with crystalline and amorphous channels, which were achieved by patterning a rubrene thin film deposited under a specific condition. The deposited film was mostly covered by amorphous rubrene matrix with smooth surface except many crystalline rubrene disks embedded with rough surface. When the channel of OTFT covers some portion of crystalline disks, the OTFT displayed a typical field effect behavior while it showed little drain current with the channel covered with amorphous background. Typical field mobility obtained from OTFT with crystalline disks was 1.23 × 10-4 cm2/V s with an on/off current ratio of -103

AB - The authors report on the fabrication of rubrene organic thin-film transistors (OTFTs) with crystalline and amorphous channels, which were achieved by patterning a rubrene thin film deposited under a specific condition. The deposited film was mostly covered by amorphous rubrene matrix with smooth surface except many crystalline rubrene disks embedded with rough surface. When the channel of OTFT covers some portion of crystalline disks, the OTFT displayed a typical field effect behavior while it showed little drain current with the channel covered with amorphous background. Typical field mobility obtained from OTFT with crystalline disks was 1.23 × 10-4 cm2/V s with an on/off current ratio of -103

UR - http://www.scopus.com/inward/record.url?scp=34247266124&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=34247266124&partnerID=8YFLogxK

U2 - 10.1063/1.2723656

DO - 10.1063/1.2723656

M3 - Article

VL - 90

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 15

M1 - 153512

ER -