Rubrene thin-film transistors with crystalline channels achieved on optimally modified dielectric surface

Jeong M. Choi, Seong Hun Jeong, Do Kyung Hwang, Seongil Im, Byoung H. Lee, Myoung M. Sung

Research output: Contribution to journalArticle

20 Citations (Scopus)


We report on the fabrication of rubrene thin-film transistors (TFTs) with surface-modified dielectrics adopting several kinds of self-assembled-monolayer (SAM) on SiO2/p+-Si substrate. With the dielectric of lower surface energy, the crystalline rubrene growth or amorphous-to-crystalline transformation kinetics is faster during in-situ vacuum post-annealing, which was performed after rubrene vacuum deposition. In the present study, hexamethyldisilazane (HMDS) was finally determined to be the most effective SAM interlayer for polycrystalline rubrene channel formation. Our rubrene TFT with HMDS-coated SiO2 dielectric showed quite a high field mobility of ∼10-2 cm2/V s and a high on/off current ratio of ∼105 under 40 V.

Original languageEnglish
Pages (from-to)199-204
Number of pages6
JournalOrganic Electronics
Issue number1
Publication statusPublished - 2009 Feb


All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Biomaterials
  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry
  • Electrical and Electronic Engineering

Cite this