Rubrene thin-film transistors with crystalline channels achieved on optimally modified dielectric surface

Jeong M. Choi, Seong Hun Jeong, Do Kyung Hwang, Seongil Im, Byoung H. Lee, Myoung M. Sung

Research output: Contribution to journalArticle

20 Citations (Scopus)

Abstract

We report on the fabrication of rubrene thin-film transistors (TFTs) with surface-modified dielectrics adopting several kinds of self-assembled-monolayer (SAM) on SiO2/p+-Si substrate. With the dielectric of lower surface energy, the crystalline rubrene growth or amorphous-to-crystalline transformation kinetics is faster during in-situ vacuum post-annealing, which was performed after rubrene vacuum deposition. In the present study, hexamethyldisilazane (HMDS) was finally determined to be the most effective SAM interlayer for polycrystalline rubrene channel formation. Our rubrene TFT with HMDS-coated SiO2 dielectric showed quite a high field mobility of ∼10-2 cm2/V s and a high on/off current ratio of ∼105 under 40 V.

Original languageEnglish
Pages (from-to)199-204
Number of pages6
JournalOrganic Electronics
Volume10
Issue number1
DOIs
Publication statusPublished - 2009 Feb

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Biomaterials
  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Rubrene thin-film transistors with crystalline channels achieved on optimally modified dielectric surface'. Together they form a unique fingerprint.

  • Cite this