Ruthenium oxide thin film electrodes for supercapacitors

Il Hwan Kim, Kwang Bum Kim

Research output: Contribution to journalArticle

113 Citations (Scopus)

Abstract

A ruthenium oxide thin film electrode with an average specific capacitance of 650 F/g and good high rate capability was prepared by electrostatic spray deposition (ESD). This technique is a one-step process of preparing ruthenium oxide thin film electrode compared with a multistep sol-gel process and has features of low-temperature synthesis and easy control of surface morphology. While as-prepared hydrous ruthenium oxide (RuO2·xH2O) thin film was in an amorphous phase, the hydrous ruthenium oxide (RuO2·xH2O) thin film became crystalline after annealing at temperatures >200°C. Ruthenium oxide thin film electrode annealed at 200°C showed a cyclic voltammogram indicative of a typical capacitive behavior in 0.5 M H2SO4 electrolyte at a scan rate of 20 mV/s with the average specific capacitance of 650 F/g. The average specific capacitance was 640 F/g at 2 mV/s and 600 F/g at 50 mV/s, respectively, indicating that the average specific capacitance decreases only slightly with increasing scan rate.

Original languageEnglish
Pages (from-to)A62-A64
JournalElectrochemical and Solid-State Letters
Volume4
Issue number5
DOIs
Publication statusPublished - 2001 May

All Science Journal Classification (ASJC) codes

  • Chemical Engineering(all)
  • Materials Science(all)
  • Physical and Theoretical Chemistry
  • Electrochemistry
  • Electrical and Electronic Engineering

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