Ruthenium (Ru) peeling and predicting robustness of the capping layer using finite element method (FEM) modeling

Il Yong Jang, Arun John, Frank Goodwin, Su Young Lee, Byung Gook Kim, Seong Sue Kim, Chan Uk Jeon, Jae Hyung Kim, Yong Hoon Jang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

7 Citations (Scopus)

Abstract

Ruthenium (Ru) film used as capping layer in extreme ultraviolet (EUV) mask peeled off after annealing and in-situ UV (IUV) cleaning. We investigated Ru peeling and found out that the mechanical stress caused by the formation of Si oxide due to the penetration of oxygen atoms from ambient or cleaning media to top-Si of ML is the root cause for the problem. To support our experimental results, we developed a numerical model of finite element method (FEM) using commercial software (ABAQUS™) to calculate the stress and displacement forced on the capping layer. By using this model, we could observe that the displacement agrees well with the actual results measured from the transmission electron microscopy (TEM) image. Using the ion beam deposition (IBD) tool at SEMATECH, we developed four new types of alternative capping materials (RuA, RuB, B4C, B4C-buffered Ru). The durability of each new alternative capping layer observed by experiment was better than that of conventional Ru. The stress and displacement calculated from each new alternative capping layer, using modeling, also agreed well with the experimental results. A new EUV mask structure is proposed, inserting a layer of B4C (B4C-buffered Ru) at the interface between the capping layer (Ru) and the top-Si layer. The modeling results showed that the maximum displacement and bending stress observed from the B4C-buffered Ru are significantly lower than that of single capping layer cases. The durability investigated from the experiment also showed that the B4C-buffered structure is at least 3X stronger than that of conventional Ru.

Original languageEnglish
Title of host publicationPhotomask and Next-Generation Lithography Mask Technology XXI
EditorsKokoro Kato
PublisherSPIE
Volume9256
ISBN (Electronic)9781628413236
DOIs
Publication statusPublished - 2014 Jan 1
EventPhotomask and Next-Generation Lithography Mask Technology XXI - Yokohama, Japan
Duration: 2014 Apr 152014 Apr 17

Other

OtherPhotomask and Next-Generation Lithography Mask Technology XXI
CountryJapan
CityYokohama
Period14/4/1514/4/17

Fingerprint

peeling
Peeling
Ruthenium
ruthenium
finite element method
Finite Element Method
Robustness
Finite element method
Modeling
Durability
Cleaning
durability
Ultraviolet
cleaning
Mask
Masks
Alternatives
Extremes
masks
Mechanical Stress

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

Cite this

Jang, I. Y., John, A., Goodwin, F., Lee, S. Y., Kim, B. G., Kim, S. S., ... Jang, Y. H. (2014). Ruthenium (Ru) peeling and predicting robustness of the capping layer using finite element method (FEM) modeling. In K. Kato (Ed.), Photomask and Next-Generation Lithography Mask Technology XXI (Vol. 9256). [92560I] SPIE. https://doi.org/10.1117/12.2069991
Jang, Il Yong ; John, Arun ; Goodwin, Frank ; Lee, Su Young ; Kim, Byung Gook ; Kim, Seong Sue ; Jeon, Chan Uk ; Kim, Jae Hyung ; Jang, Yong Hoon. / Ruthenium (Ru) peeling and predicting robustness of the capping layer using finite element method (FEM) modeling. Photomask and Next-Generation Lithography Mask Technology XXI. editor / Kokoro Kato. Vol. 9256 SPIE, 2014.
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title = "Ruthenium (Ru) peeling and predicting robustness of the capping layer using finite element method (FEM) modeling",
abstract = "Ruthenium (Ru) film used as capping layer in extreme ultraviolet (EUV) mask peeled off after annealing and in-situ UV (IUV) cleaning. We investigated Ru peeling and found out that the mechanical stress caused by the formation of Si oxide due to the penetration of oxygen atoms from ambient or cleaning media to top-Si of ML is the root cause for the problem. To support our experimental results, we developed a numerical model of finite element method (FEM) using commercial software (ABAQUS™) to calculate the stress and displacement forced on the capping layer. By using this model, we could observe that the displacement agrees well with the actual results measured from the transmission electron microscopy (TEM) image. Using the ion beam deposition (IBD) tool at SEMATECH, we developed four new types of alternative capping materials (RuA, RuB, B4C, B4C-buffered Ru). The durability of each new alternative capping layer observed by experiment was better than that of conventional Ru. The stress and displacement calculated from each new alternative capping layer, using modeling, also agreed well with the experimental results. A new EUV mask structure is proposed, inserting a layer of B4C (B4C-buffered Ru) at the interface between the capping layer (Ru) and the top-Si layer. The modeling results showed that the maximum displacement and bending stress observed from the B4C-buffered Ru are significantly lower than that of single capping layer cases. The durability investigated from the experiment also showed that the B4C-buffered structure is at least 3X stronger than that of conventional Ru.",
author = "Jang, {Il Yong} and Arun John and Frank Goodwin and Lee, {Su Young} and Kim, {Byung Gook} and Kim, {Seong Sue} and Jeon, {Chan Uk} and Kim, {Jae Hyung} and Jang, {Yong Hoon}",
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Jang, IY, John, A, Goodwin, F, Lee, SY, Kim, BG, Kim, SS, Jeon, CU, Kim, JH & Jang, YH 2014, Ruthenium (Ru) peeling and predicting robustness of the capping layer using finite element method (FEM) modeling. in K Kato (ed.), Photomask and Next-Generation Lithography Mask Technology XXI. vol. 9256, 92560I, SPIE, Photomask and Next-Generation Lithography Mask Technology XXI, Yokohama, Japan, 14/4/15. https://doi.org/10.1117/12.2069991

Ruthenium (Ru) peeling and predicting robustness of the capping layer using finite element method (FEM) modeling. / Jang, Il Yong; John, Arun; Goodwin, Frank; Lee, Su Young; Kim, Byung Gook; Kim, Seong Sue; Jeon, Chan Uk; Kim, Jae Hyung; Jang, Yong Hoon.

Photomask and Next-Generation Lithography Mask Technology XXI. ed. / Kokoro Kato. Vol. 9256 SPIE, 2014. 92560I.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

TY - GEN

T1 - Ruthenium (Ru) peeling and predicting robustness of the capping layer using finite element method (FEM) modeling

AU - Jang, Il Yong

AU - John, Arun

AU - Goodwin, Frank

AU - Lee, Su Young

AU - Kim, Byung Gook

AU - Kim, Seong Sue

AU - Jeon, Chan Uk

AU - Kim, Jae Hyung

AU - Jang, Yong Hoon

PY - 2014/1/1

Y1 - 2014/1/1

N2 - Ruthenium (Ru) film used as capping layer in extreme ultraviolet (EUV) mask peeled off after annealing and in-situ UV (IUV) cleaning. We investigated Ru peeling and found out that the mechanical stress caused by the formation of Si oxide due to the penetration of oxygen atoms from ambient or cleaning media to top-Si of ML is the root cause for the problem. To support our experimental results, we developed a numerical model of finite element method (FEM) using commercial software (ABAQUS™) to calculate the stress and displacement forced on the capping layer. By using this model, we could observe that the displacement agrees well with the actual results measured from the transmission electron microscopy (TEM) image. Using the ion beam deposition (IBD) tool at SEMATECH, we developed four new types of alternative capping materials (RuA, RuB, B4C, B4C-buffered Ru). The durability of each new alternative capping layer observed by experiment was better than that of conventional Ru. The stress and displacement calculated from each new alternative capping layer, using modeling, also agreed well with the experimental results. A new EUV mask structure is proposed, inserting a layer of B4C (B4C-buffered Ru) at the interface between the capping layer (Ru) and the top-Si layer. The modeling results showed that the maximum displacement and bending stress observed from the B4C-buffered Ru are significantly lower than that of single capping layer cases. The durability investigated from the experiment also showed that the B4C-buffered structure is at least 3X stronger than that of conventional Ru.

AB - Ruthenium (Ru) film used as capping layer in extreme ultraviolet (EUV) mask peeled off after annealing and in-situ UV (IUV) cleaning. We investigated Ru peeling and found out that the mechanical stress caused by the formation of Si oxide due to the penetration of oxygen atoms from ambient or cleaning media to top-Si of ML is the root cause for the problem. To support our experimental results, we developed a numerical model of finite element method (FEM) using commercial software (ABAQUS™) to calculate the stress and displacement forced on the capping layer. By using this model, we could observe that the displacement agrees well with the actual results measured from the transmission electron microscopy (TEM) image. Using the ion beam deposition (IBD) tool at SEMATECH, we developed four new types of alternative capping materials (RuA, RuB, B4C, B4C-buffered Ru). The durability of each new alternative capping layer observed by experiment was better than that of conventional Ru. The stress and displacement calculated from each new alternative capping layer, using modeling, also agreed well with the experimental results. A new EUV mask structure is proposed, inserting a layer of B4C (B4C-buffered Ru) at the interface between the capping layer (Ru) and the top-Si layer. The modeling results showed that the maximum displacement and bending stress observed from the B4C-buffered Ru are significantly lower than that of single capping layer cases. The durability investigated from the experiment also showed that the B4C-buffered structure is at least 3X stronger than that of conventional Ru.

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Jang IY, John A, Goodwin F, Lee SY, Kim BG, Kim SS et al. Ruthenium (Ru) peeling and predicting robustness of the capping layer using finite element method (FEM) modeling. In Kato K, editor, Photomask and Next-Generation Lithography Mask Technology XXI. Vol. 9256. SPIE. 2014. 92560I https://doi.org/10.1117/12.2069991