S-RCAT (Sphere-shaped-Recess-Channel-Array Transistor) Technology for 70nm DRAM feature size and beyond

J. Y. Kim, H. J. Oh, D. S. Woo, Y. S. Lee, D. H. Kim, S. E. Kim, G. W. Ha, H. J. Kim, N. J. Kang, J. M. Park, Y. S. Hwang, D. I. Kim, B. J. Park, M. Huh, B. H. Lee, S. B. Kim, M. H. Cho, M. Y. Jung, Y. I. Kim, C. JinD. W. Shin, M. S. Shim, C. S. Lee, W. S. Lee, J. C. Park, G. Y. Jin, Y. J. Park, Kinam Kim

Research output: Contribution to journalConference article

29 Citations (Scopus)

Abstract

For the first time, S-RCAT (Sphere-shaped-Recess-Channel-Array Transistor) technology has been successfully developed in a 2Gb density DRAM with 70nm feature size. It is a modified structure of the RCAT (Recess-Channel-Array Transistor) and shows an excellent scalability of recessed-channel structure to sub-50nm feature size. The S-RCAT demonstrated superior characteristics in DIBL, subthreshold swing (SW), body effect, junction leakage current and data retention time, comparing to the RCAT structure. In this paper, S-RCAT is proved to be the most promising DRAM array transistor suitable for sub-50nm and mobile applications.

Original languageEnglish
Article number1469201
Pages (from-to)34-35
Number of pages2
JournalDigest of Technical Papers - Symposium on VLSI Technology
Volume2005
DOIs
Publication statusPublished - 2005 Dec 1
Event2005 Symposium on VLSI Technology - Kyoto, Japan
Duration: 2005 Jun 142005 Jun 14

Fingerprint

Dynamic random access storage
Transistors
Leakage currents
Scalability

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

Cite this

Kim, J. Y. ; Oh, H. J. ; Woo, D. S. ; Lee, Y. S. ; Kim, D. H. ; Kim, S. E. ; Ha, G. W. ; Kim, H. J. ; Kang, N. J. ; Park, J. M. ; Hwang, Y. S. ; Kim, D. I. ; Park, B. J. ; Huh, M. ; Lee, B. H. ; Kim, S. B. ; Cho, M. H. ; Jung, M. Y. ; Kim, Y. I. ; Jin, C. ; Shin, D. W. ; Shim, M. S. ; Lee, C. S. ; Lee, W. S. ; Park, J. C. ; Jin, G. Y. ; Park, Y. J. ; Kim, Kinam. / S-RCAT (Sphere-shaped-Recess-Channel-Array Transistor) Technology for 70nm DRAM feature size and beyond. In: Digest of Technical Papers - Symposium on VLSI Technology. 2005 ; Vol. 2005. pp. 34-35.
@article{a20351282b3247b7b07c108c73fec515,
title = "S-RCAT (Sphere-shaped-Recess-Channel-Array Transistor) Technology for 70nm DRAM feature size and beyond",
abstract = "For the first time, S-RCAT (Sphere-shaped-Recess-Channel-Array Transistor) technology has been successfully developed in a 2Gb density DRAM with 70nm feature size. It is a modified structure of the RCAT (Recess-Channel-Array Transistor) and shows an excellent scalability of recessed-channel structure to sub-50nm feature size. The S-RCAT demonstrated superior characteristics in DIBL, subthreshold swing (SW), body effect, junction leakage current and data retention time, comparing to the RCAT structure. In this paper, S-RCAT is proved to be the most promising DRAM array transistor suitable for sub-50nm and mobile applications.",
author = "Kim, {J. Y.} and Oh, {H. J.} and Woo, {D. S.} and Lee, {Y. S.} and Kim, {D. H.} and Kim, {S. E.} and Ha, {G. W.} and Kim, {H. J.} and Kang, {N. J.} and Park, {J. M.} and Hwang, {Y. S.} and Kim, {D. I.} and Park, {B. J.} and M. Huh and Lee, {B. H.} and Kim, {S. B.} and Cho, {M. H.} and Jung, {M. Y.} and Kim, {Y. I.} and C. Jin and Shin, {D. W.} and Shim, {M. S.} and Lee, {C. S.} and Lee, {W. S.} and Park, {J. C.} and Jin, {G. Y.} and Park, {Y. J.} and Kinam Kim",
year = "2005",
month = "12",
day = "1",
doi = "10.1109/.2005.1469201",
language = "English",
volume = "2005",
pages = "34--35",
journal = "Digest of Technical Papers - Symposium on VLSI Technology",
issn = "0743-1562",
publisher = "Institute of Electrical and Electronics Engineers Inc.",

}

Kim, JY, Oh, HJ, Woo, DS, Lee, YS, Kim, DH, Kim, SE, Ha, GW, Kim, HJ, Kang, NJ, Park, JM, Hwang, YS, Kim, DI, Park, BJ, Huh, M, Lee, BH, Kim, SB, Cho, MH, Jung, MY, Kim, YI, Jin, C, Shin, DW, Shim, MS, Lee, CS, Lee, WS, Park, JC, Jin, GY, Park, YJ & Kim, K 2005, 'S-RCAT (Sphere-shaped-Recess-Channel-Array Transistor) Technology for 70nm DRAM feature size and beyond', Digest of Technical Papers - Symposium on VLSI Technology, vol. 2005, 1469201, pp. 34-35. https://doi.org/10.1109/.2005.1469201

S-RCAT (Sphere-shaped-Recess-Channel-Array Transistor) Technology for 70nm DRAM feature size and beyond. / Kim, J. Y.; Oh, H. J.; Woo, D. S.; Lee, Y. S.; Kim, D. H.; Kim, S. E.; Ha, G. W.; Kim, H. J.; Kang, N. J.; Park, J. M.; Hwang, Y. S.; Kim, D. I.; Park, B. J.; Huh, M.; Lee, B. H.; Kim, S. B.; Cho, M. H.; Jung, M. Y.; Kim, Y. I.; Jin, C.; Shin, D. W.; Shim, M. S.; Lee, C. S.; Lee, W. S.; Park, J. C.; Jin, G. Y.; Park, Y. J.; Kim, Kinam.

In: Digest of Technical Papers - Symposium on VLSI Technology, Vol. 2005, 1469201, 01.12.2005, p. 34-35.

Research output: Contribution to journalConference article

TY - JOUR

T1 - S-RCAT (Sphere-shaped-Recess-Channel-Array Transistor) Technology for 70nm DRAM feature size and beyond

AU - Kim, J. Y.

AU - Oh, H. J.

AU - Woo, D. S.

AU - Lee, Y. S.

AU - Kim, D. H.

AU - Kim, S. E.

AU - Ha, G. W.

AU - Kim, H. J.

AU - Kang, N. J.

AU - Park, J. M.

AU - Hwang, Y. S.

AU - Kim, D. I.

AU - Park, B. J.

AU - Huh, M.

AU - Lee, B. H.

AU - Kim, S. B.

AU - Cho, M. H.

AU - Jung, M. Y.

AU - Kim, Y. I.

AU - Jin, C.

AU - Shin, D. W.

AU - Shim, M. S.

AU - Lee, C. S.

AU - Lee, W. S.

AU - Park, J. C.

AU - Jin, G. Y.

AU - Park, Y. J.

AU - Kim, Kinam

PY - 2005/12/1

Y1 - 2005/12/1

N2 - For the first time, S-RCAT (Sphere-shaped-Recess-Channel-Array Transistor) technology has been successfully developed in a 2Gb density DRAM with 70nm feature size. It is a modified structure of the RCAT (Recess-Channel-Array Transistor) and shows an excellent scalability of recessed-channel structure to sub-50nm feature size. The S-RCAT demonstrated superior characteristics in DIBL, subthreshold swing (SW), body effect, junction leakage current and data retention time, comparing to the RCAT structure. In this paper, S-RCAT is proved to be the most promising DRAM array transistor suitable for sub-50nm and mobile applications.

AB - For the first time, S-RCAT (Sphere-shaped-Recess-Channel-Array Transistor) technology has been successfully developed in a 2Gb density DRAM with 70nm feature size. It is a modified structure of the RCAT (Recess-Channel-Array Transistor) and shows an excellent scalability of recessed-channel structure to sub-50nm feature size. The S-RCAT demonstrated superior characteristics in DIBL, subthreshold swing (SW), body effect, junction leakage current and data retention time, comparing to the RCAT structure. In this paper, S-RCAT is proved to be the most promising DRAM array transistor suitable for sub-50nm and mobile applications.

UR - http://www.scopus.com/inward/record.url?scp=33745146876&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33745146876&partnerID=8YFLogxK

U2 - 10.1109/.2005.1469201

DO - 10.1109/.2005.1469201

M3 - Conference article

AN - SCOPUS:33745146876

VL - 2005

SP - 34

EP - 35

JO - Digest of Technical Papers - Symposium on VLSI Technology

JF - Digest of Technical Papers - Symposium on VLSI Technology

SN - 0743-1562

M1 - 1469201

ER -