Sb-doped p-ZnO quantum dots: Templates for ZnO nanorods homojunction white light-emitting diodes by low-temperature solution process

Sung Doo Baek, Yun Cheol Kim, Jae Min Myoung

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

Zinc oxide (ZnO) is an attractive metal oxide material in optoelectronics because of its visible light-emitting property caused by various deep-level defects. To exploit this property to its full potential in optoelectronic device applications, it is necessary to synthesize quantum-dot sized ZnO and to obtain p-type ZnO for achieving a p-n homojunction. In this study, for the first time, Sb-doped p-ZnO quantum dots (QDs) were successfully synthesized with a doping concentration of 0.5, 1, 2, and 5 at.% by a facile solution process at a low temperature of 30 °C. The obtained Sb-doped p-ZnO QDs exhibited strong and broad deep-level emission due to various deep-level defects. The p-type conductivity of the Sb-doped p-ZnO QDs was confirmed by applying QDs to a channel layer in TFTs. By using the obtained Sb-doped p-ZnO QDs as a p-type layer and growing n-ZnO nanorods (NRs) hydrothermally on top of the p-ZnO QD layer, ZnO-based homojunction white light-emitting diodes (WLEDs) were successfully fabricated. The fabricated WLEDs exhibited naked-eye observable white light emitting over the entire visible spectral region.

Original languageEnglish
Pages (from-to)122-130
Number of pages9
JournalApplied Surface Science
Volume480
DOIs
Publication statusPublished - 2019 Jun 30

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Zinc Oxide
Zinc oxide
Nanorods
Semiconductor quantum dots
Light emitting diodes
Temperature
Optoelectronic devices
Defects
Oxides
Metals
Doping (additives)

All Science Journal Classification (ASJC) codes

  • Surfaces, Coatings and Films

Cite this

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title = "Sb-doped p-ZnO quantum dots: Templates for ZnO nanorods homojunction white light-emitting diodes by low-temperature solution process",
abstract = "Zinc oxide (ZnO) is an attractive metal oxide material in optoelectronics because of its visible light-emitting property caused by various deep-level defects. To exploit this property to its full potential in optoelectronic device applications, it is necessary to synthesize quantum-dot sized ZnO and to obtain p-type ZnO for achieving a p-n homojunction. In this study, for the first time, Sb-doped p-ZnO quantum dots (QDs) were successfully synthesized with a doping concentration of 0.5, 1, 2, and 5 at.{\%} by a facile solution process at a low temperature of 30 °C. The obtained Sb-doped p-ZnO QDs exhibited strong and broad deep-level emission due to various deep-level defects. The p-type conductivity of the Sb-doped p-ZnO QDs was confirmed by applying QDs to a channel layer in TFTs. By using the obtained Sb-doped p-ZnO QDs as a p-type layer and growing n-ZnO nanorods (NRs) hydrothermally on top of the p-ZnO QD layer, ZnO-based homojunction white light-emitting diodes (WLEDs) were successfully fabricated. The fabricated WLEDs exhibited naked-eye observable white light emitting over the entire visible spectral region.",
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Sb-doped p-ZnO quantum dots : Templates for ZnO nanorods homojunction white light-emitting diodes by low-temperature solution process. / Baek, Sung Doo; Kim, Yun Cheol; Myoung, Jae Min.

In: Applied Surface Science, Vol. 480, 30.06.2019, p. 122-130.

Research output: Contribution to journalArticle

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AU - Myoung, Jae Min

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