Scalable Two-Dimensional Lateral Metal/Semiconductor Junction Fabricated with Selective Synthetic Integration of Transition-Metal-Carbide (Mo2C)/-Dichalcogenide (MoS2)

Seunghyuk Choi, Young Jae Kim, Jaeho Jeon, Byoung Hun Lee, Jeong Ho Cho, Sungjoo Lee

Research output: Contribution to journalArticlepeer-review

15 Citations (Scopus)


The construction of manufacturable, stable, high-quality metal/semiconductor junction structures is of fundamental importance to implement higher-level devices and circuit systems. Owing to the unique features of two-dimensional (2D) materials, namely, that intralayer atoms are covalently bonded, whereas interlayer atoms are held together by weak attractive interactions, there are several studies on the fabrication and identification of the peculiar properties of various 2D heterostructures. However, large-scale 2D lateral metal/semiconductor junction structures with acceptable levels of manufacturability and quality have not yet been demonstrated, which is among the critical technological hurdles to overcome for the realization of 2D material-based electronic and photonic devices. This paper reports the fabrication of a manufacturable large-scale metal (Mo2C)/semiconductor (MoS2) junction via selective synthetic integration and a lithographically patterned SiO2 masking layer. It is demonstrated that whereas chemical conversion to Mo2C occurs in the exposed chemical vapor deposition-grown MoS2 part, the MoS2 layer under the SiO2 masking layer is protected from chemical conversion, so that a scalable Mo2C/MoS2 heterostructure is integrated down to nanometer-scale dimensions. Excellent contact resistance of 2.1 kω·μm is achieved from this lateral junction structure, providing a manufacturable and highly stable metal/semiconductor building block for real implementation of 2D material-based nanoscale device integration.

Original languageEnglish
Pages (from-to)47190-47196
Number of pages7
JournalACS Applied Materials and Interfaces
Issue number50
Publication statusPublished - 2019 Dec 18

Bibliographical note

Funding Information:
This research was supported by the Basic Science Research Program through the National Research Foundation of Korea funded by the Korean government (MSIP) (grant numbers: 2017R1A4A1015400, 2018R1D1A1A09081931, and 2019M3F3A1A01074451), and Global Frontier Program through the Global Frontier Hybrid Interface Materials (GFHIM) (2013M3A6B1078873) of the National Research Foundation of Korea (NRF).

Publisher Copyright:
Copyright © 2019 American Chemical Society.

All Science Journal Classification (ASJC) codes

  • Materials Science(all)


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