Scaling behaviors for resistive memory switching in NiO nanowire devices

Sung In Kim, Young Ho Sa, Joo Hyung Kim, Young Wook Chang, Nanmee Kim, Heesang Kim, Kyung Hwa Yoo

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

We investigated scaling behaviors for NiO nanowire array devices with different nanowire diameters. Plots of the reset current and the third harmonic generation signal as a function of the on-state resistance (R0) show scaling behaviors for all devices, such as NiO film devices. However, the scaling exponents of NiO nanowire devices were different from those of NiO film devices, and hence the fractal dimension estimated from the scaling exponent was smaller for the NiO nanowire devices than for the NiO film devices. This decrease in the fractal dimension was attributed to the confinement of the conducting filaments within each nanowire.

Original languageEnglish
Article number023513
JournalApplied Physics Letters
Volume104
Issue number2
DOIs
Publication statusPublished - 2014 Jan 13

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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    In Kim, S., Ho Sa, Y., Kim, J. H., Wook Chang, Y., Kim, N., Kim, H., & Yoo, K. H. (2014). Scaling behaviors for resistive memory switching in NiO nanowire devices. Applied Physics Letters, 104(2), [023513]. https://doi.org/10.1063/1.4862751