Scanning probe based observation of bipolar resistive switching NiO films

Min Hwan Lee, Seul Ji Song, Kyung Min Kim, Gun Hwan Kim, Jun Yeong Seok, Jung Ho Yoon, Cheol Seong Hwang

Research output: Contribution to journalArticlepeer-review


The switching mechanism of the bipolar resistive switching behavior on NiO films was examined using local probe based measurements. Unlike the unipolar switching normally observed on a metal-insulator-metal structure, repetitive bipolar switching was observed on NiO films when a local probe was used as the top electrode. Surface potential and current maps obtained after the anodic/cathodic bias application through the scanning probe both in air and under high vacuum suggested that the resistive switching is caused mainly by the electrochemical redox reaction at the electrode-film interface rather than by charge drift within the NiO film.

Original languageEnglish
Article number062909
JournalApplied Physics Letters
Issue number6
Publication statusPublished - 2010 Aug 9

Bibliographical note

Funding Information:
The authors acknowledge the support of the National Research Program for the Nano Semiconductor Apparatus Development, and 0.1Terabit NVM Devices sponsored by the Korean Ministry of Knowledge and Economy, and World Class University program through the Korea Science and Engineering Foundation funded by the Ministry of Education, Science and Technology (Grant No. R31-2008-000-10075-0).

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)


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