Scanning probe based observation of bipolar resistive switching NiO films

Min Hwan Lee; Seul Ji Song; Kyung Min Kim; Gun Hwan Kim; Jun Yeong Seok; Jung Ho Yoon; Cheol Seong Hwang

doi:10.1063/1.3479526

Scanning probe based observation of bipolar resistive switching NiO films

Min Hwan Lee, Seul Ji Song, Kyung Min Kim, Gun Hwan Kim, Jun Yeong Seok, Jung Ho Yoon, Cheol Seong Hwang

School of System & Semiconductor Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

The switching mechanism of the bipolar resistive switching behavior on NiO films was examined using local probe based measurements. Unlike the unipolar switching normally observed on a metal-insulator-metal structure, repetitive bipolar switching was observed on NiO films when a local probe was used as the top electrode. Surface potential and current maps obtained after the anodic/cathodic bias application through the scanning probe both in air and under high vacuum suggested that the resistive switching is caused mainly by the electrochemical redox reaction at the electrode-film interface rather than by charge drift within the NiO film.

Original language	English
Article number	062909
Journal	Applied Physics Letters
Volume	97
Issue number	6
DOIs	https://doi.org/10.1063/1.3479526
Publication status	Published - 2010 Aug 9

Bibliographical note

Funding Information:
The authors acknowledge the support of the National Research Program for the Nano Semiconductor Apparatus Development, and 0.1Terabit NVM Devices sponsored by the Korean Ministry of Knowledge and Economy, and World Class University program through the Korea Science and Engineering Foundation funded by the Ministry of Education, Science and Technology (Grant No. R31-2008-000-10075-0).

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.3479526

Cite this

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title = "Scanning probe based observation of bipolar resistive switching NiO films",

abstract = "The switching mechanism of the bipolar resistive switching behavior on NiO films was examined using local probe based measurements. Unlike the unipolar switching normally observed on a metal-insulator-metal structure, repetitive bipolar switching was observed on NiO films when a local probe was used as the top electrode. Surface potential and current maps obtained after the anodic/cathodic bias application through the scanning probe both in air and under high vacuum suggested that the resistive switching is caused mainly by the electrochemical redox reaction at the electrode-film interface rather than by charge drift within the NiO film.",

author = "Lee, {Min Hwan} and Song, {Seul Ji} and Kim, {Kyung Min} and Kim, {Gun Hwan} and Seok, {Jun Yeong} and Yoon, {Jung Ho} and Hwang, {Cheol Seong}",

note = "Funding Information: The authors acknowledge the support of the National Research Program for the Nano Semiconductor Apparatus Development, and 0.1Terabit NVM Devices sponsored by the Korean Ministry of Knowledge and Economy, and World Class University program through the Korea Science and Engineering Foundation funded by the Ministry of Education, Science and Technology (Grant No. R31-2008-000-10075-0).",

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AU - Lee, Min Hwan

AU - Song, Seul Ji

AU - Kim, Kyung Min

AU - Kim, Gun Hwan

AU - Seok, Jun Yeong

AU - Yoon, Jung Ho

AU - Hwang, Cheol Seong

N1 - Funding Information: The authors acknowledge the support of the National Research Program for the Nano Semiconductor Apparatus Development, and 0.1Terabit NVM Devices sponsored by the Korean Ministry of Knowledge and Economy, and World Class University program through the Korea Science and Engineering Foundation funded by the Ministry of Education, Science and Technology (Grant No. R31-2008-000-10075-0).

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Y1 - 2010/8/9

N2 - The switching mechanism of the bipolar resistive switching behavior on NiO films was examined using local probe based measurements. Unlike the unipolar switching normally observed on a metal-insulator-metal structure, repetitive bipolar switching was observed on NiO films when a local probe was used as the top electrode. Surface potential and current maps obtained after the anodic/cathodic bias application through the scanning probe both in air and under high vacuum suggested that the resistive switching is caused mainly by the electrochemical redox reaction at the electrode-film interface rather than by charge drift within the NiO film.

AB - The switching mechanism of the bipolar resistive switching behavior on NiO films was examined using local probe based measurements. Unlike the unipolar switching normally observed on a metal-insulator-metal structure, repetitive bipolar switching was observed on NiO films when a local probe was used as the top electrode. Surface potential and current maps obtained after the anodic/cathodic bias application through the scanning probe both in air and under high vacuum suggested that the resistive switching is caused mainly by the electrochemical redox reaction at the electrode-film interface rather than by charge drift within the NiO film.

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Scanning probe based observation of bipolar resistive switching NiO films

Abstract

Bibliographical note

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