Monolayer graphene is used as an electrode to develop novel electronic device architectures that exploit the unique, atomically thin structure of the material with a low density of states at its charge neutrality point. For example, a single semiconductor layer stacked onto graphene can provide a semiconductor–electrode junction with a tunable injection barrier, which is the basis for a primitive transistor architecture known as the Schottky barrier field-effect transistor. This work demonstrates the next level of complexity in a vertical graphene–semiconductor architecture. Specifically, an organic vertical p-n junction (p-type pentacene/n-type N,N′-dioctyl-3,4,9,10-perylenedicarboximide (PTCDI-C8)) on top of a graphene electrode constituting a novel gate-tunable photodiode device structure is fabricated. The model device confirms that controlling the Schottky barrier height at the pentacene–graphene junction can (i) suppress the dark current density and (ii) enhance the photocurrent of the device, both of which are critical to improve the performance of a photodiode.
Bibliographical noteFunding Information:
J.S.K. and Y.J.C. contributed equally to this work. This work was supported by a grant from the Center for Advanced Soft Electronics (CASE) under the Global Frontier Research Program (2013M3A6A5073177), Korea. This work was also supported by the National Research Foundation of Korea (NRF) funded by the Korea government (MSIP; Ministry of Science, ICT & Future Planning (NRF-2015R1D1A1A01058493 and NRF-2017R1C1B2006789), Korea.
© 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Condensed Matter Physics