Schottky diode with excellent performance for large integration density of crossbar resistive memory

Gun Hwan Kim; Jong Ho Lee; Jeong Hwan Han; Seul Ji Song; Jun Yeong Seok; Jung Ho Yoon; Kyung Jean Yoon; Min Hwan Lee; Tae Joo Park; Cheol Seong Hwang

doi:10.1063/1.4722784

Schottky diode with excellent performance for large integration density of crossbar resistive memory

Gun Hwan Kim, Jong Ho Lee, Jeong Hwan Han, Seul Ji Song, Jun Yeong Seok, Jung Ho Yoon, Kyung Jean Yoon, Min Hwan Lee, Tae Joo Park, Cheol Seong Hwang

School of System & Semiconductor Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

A Schottky diode (SD) with Au/Pt/TiO ₂/Ti/Pt stacked structure were fabricated for its application to crossbar type resistive switching (RS) memory. The SDs showed a highly promising rectification ratio (∼2.4 × 10 ⁶ @ ±2 V) between forward and reverse state currents and a high forward current density (∼3 × 10 ⁵A/cm ² @ 2 V), which is useful for highly integrated crossbar RS memory. The SD has local forward current conduction paths, which provides extremely scaled devices with an advantage. The minimization of interconnection line resistance is also important to provide sufficient current to achieve stable operation of RS memory.

Original language	English
Article number	213508
Journal	Applied Physics Letters
Volume	100
Issue number	21
DOIs	https://doi.org/10.1063/1.4722784
Publication status	Published - 2012 May 21

Bibliographical note

Funding Information:
This study was supported by the National Research Program for Nano Semiconductor Apparatus Development sponsored by the Korean Ministry of Knowledge and Economy, and the Convergent Research Center Program (2011K000610) through the National Research Foundation of Korea funded by the Ministry of Education, Science, and Technology.

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.4722784

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title = "Schottky diode with excellent performance for large integration density of crossbar resistive memory",

abstract = "A Schottky diode (SD) with Au/Pt/TiO 2/Ti/Pt stacked structure were fabricated for its application to crossbar type resistive switching (RS) memory. The SDs showed a highly promising rectification ratio (∼2.4 × 10 6 @ ±2 V) between forward and reverse state currents and a high forward current density (∼3 × 10 5A/cm 2 @ 2 V), which is useful for highly integrated crossbar RS memory. The SD has local forward current conduction paths, which provides extremely scaled devices with an advantage. The minimization of interconnection line resistance is also important to provide sufficient current to achieve stable operation of RS memory.",

author = "{Hwan Kim}, Gun and {Ho Lee}, Jong and {Hwan Han}, Jeong and {Ji Song}, Seul and {Yeong Seok}, Jun and {Ho Yoon}, Jung and {Jean Yoon}, Kyung and {Hwan Lee}, Min and {Joo Park}, Tae and {Seong Hwang}, Cheol",

note = "Funding Information: This study was supported by the National Research Program for Nano Semiconductor Apparatus Development sponsored by the Korean Ministry of Knowledge and Economy, and the Convergent Research Center Program (2011K000610) through the National Research Foundation of Korea funded by the Ministry of Education, Science, and Technology.",

year = "2012",

month = may,

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doi = "10.1063/1.4722784",

language = "English",

volume = "100",

journal = "Applied Physics Letters",

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AU - Hwan Kim, Gun

AU - Ho Lee, Jong

AU - Hwan Han, Jeong

AU - Ji Song, Seul

AU - Yeong Seok, Jun

AU - Ho Yoon, Jung

AU - Jean Yoon, Kyung

AU - Hwan Lee, Min

AU - Joo Park, Tae

AU - Seong Hwang, Cheol

N1 - Funding Information: This study was supported by the National Research Program for Nano Semiconductor Apparatus Development sponsored by the Korean Ministry of Knowledge and Economy, and the Convergent Research Center Program (2011K000610) through the National Research Foundation of Korea funded by the Ministry of Education, Science, and Technology.

PY - 2012/5/21

Y1 - 2012/5/21

N2 - A Schottky diode (SD) with Au/Pt/TiO 2/Ti/Pt stacked structure were fabricated for its application to crossbar type resistive switching (RS) memory. The SDs showed a highly promising rectification ratio (∼2.4 × 10 6 @ ±2 V) between forward and reverse state currents and a high forward current density (∼3 × 10 5A/cm 2 @ 2 V), which is useful for highly integrated crossbar RS memory. The SD has local forward current conduction paths, which provides extremely scaled devices with an advantage. The minimization of interconnection line resistance is also important to provide sufficient current to achieve stable operation of RS memory.

AB - A Schottky diode (SD) with Au/Pt/TiO 2/Ti/Pt stacked structure were fabricated for its application to crossbar type resistive switching (RS) memory. The SDs showed a highly promising rectification ratio (∼2.4 × 10 6 @ ±2 V) between forward and reverse state currents and a high forward current density (∼3 × 10 5A/cm 2 @ 2 V), which is useful for highly integrated crossbar RS memory. The SD has local forward current conduction paths, which provides extremely scaled devices with an advantage. The minimization of interconnection line resistance is also important to provide sufficient current to achieve stable operation of RS memory.

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JF - Applied Physics Letters

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ER -

Schottky diode with excellent performance for large integration density of crossbar resistive memory

Abstract

Bibliographical note

All Science Journal Classification (ASJC) codes

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