A Schottky diode (SD) with Au/Pt/TiO 2/Ti/Pt stacked structure were fabricated for its application to crossbar type resistive switching (RS) memory. The SDs showed a highly promising rectification ratio (∼2.4 × 10 6 @ ±2 V) between forward and reverse state currents and a high forward current density (∼3 × 10 5A/cm 2 @ 2 V), which is useful for highly integrated crossbar RS memory. The SD has local forward current conduction paths, which provides extremely scaled devices with an advantage. The minimization of interconnection line resistance is also important to provide sufficient current to achieve stable operation of RS memory.
|Journal||Applied Physics Letters|
|Publication status||Published - 2012 May 21|
Bibliographical noteFunding Information:
This study was supported by the National Research Program for Nano Semiconductor Apparatus Development sponsored by the Korean Ministry of Knowledge and Economy, and the Convergent Research Center Program (2011K000610) through the National Research Foundation of Korea funded by the Ministry of Education, Science, and Technology.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)