TY - JOUR
T1 - Se-doped Ge10Sb90 for highly reliable phase-change memory with low operation power
AU - Kim, Jeong Hoon
AU - Byeon, Dae Seop
AU - Ko, Dae Hong
AU - Park, Jeong Hee
N1 - Publisher Copyright:
© Materials Research Society 2017.
Copyright:
Copyright 2017 Elsevier B.V., All rights reserved.
PY - 2017/7/14
Y1 - 2017/7/14
N2 - In this study, we propose a Se-incorporated Ge10Sb90 as a phase-change material for phase-change memory (PCM) with high reliability and low operation power. We investigated the effect of the Se concentration on the thermal and electrical properties of Se-doped Ge10Sb90 films by varying the Se concentration from 0 to 20 at.%. The crystallization temperature, crystallization activation energy, and maximum ten-year data retention temperature increased with the increasing Se, thus demonstrating the improved thermal stability of Se-doped Ge10Sb90 films with higher Se contents. More Se also increased the rate factor, band gap, threshold voltage, and load resistance. In addition, the crystallization speed, programming window, and resistances of both the amorphous and crystalline states increased with the increasing Se concentration. In contrast, the reset current decreased with the increasing Se concentration. These results demonstrate that Se-doped Ge10Sb90 is a highly promising material for PCM applications.
AB - In this study, we propose a Se-incorporated Ge10Sb90 as a phase-change material for phase-change memory (PCM) with high reliability and low operation power. We investigated the effect of the Se concentration on the thermal and electrical properties of Se-doped Ge10Sb90 films by varying the Se concentration from 0 to 20 at.%. The crystallization temperature, crystallization activation energy, and maximum ten-year data retention temperature increased with the increasing Se, thus demonstrating the improved thermal stability of Se-doped Ge10Sb90 films with higher Se contents. More Se also increased the rate factor, band gap, threshold voltage, and load resistance. In addition, the crystallization speed, programming window, and resistances of both the amorphous and crystalline states increased with the increasing Se concentration. In contrast, the reset current decreased with the increasing Se concentration. These results demonstrate that Se-doped Ge10Sb90 is a highly promising material for PCM applications.
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U2 - 10.1557/jmr.2017.221
DO - 10.1557/jmr.2017.221
M3 - Article
AN - SCOPUS:85021119104
VL - 32
SP - 2449
EP - 2455
JO - Journal of Materials Research
JF - Journal of Materials Research
SN - 0884-2914
IS - 13
ER -