Seamless MoTe2 Homojunction PIN Diode toward 1300 nm Short-Wave Infrared Detection

Han Sol Lee, June Yeong Lim, Sanghyuck Yu, Yeonsu Jeong, Sam Park, Kyunghwan Oh, Seongjin Hong, Seunghoon Yang, Chul Ho Lee, Seongil Im

Research output: Contribution to journalArticle

Abstract

Homojunction PN and PIN diodes based on 2D transition metal dichalcogenide (TMD) MoTe2 are reported in this work. Up to date, for PN junction diodes, type II-based heterojunction diodes are mainly seen in report, but homojunction PN diodes using 2D-layered materials are still rare although they enable seamless integration. Recently, hydrogen (H)-doped n-type MoTe2, achieved via atomic layer deposition (ALD) on top of a p-type MoTe2 surface, was reported. Consequently, a lateral homojunction PN diode was realized by H-doping. In fact, MoTe2-based devices with a thickness on the order of nanometers can be applied for short-wave infrared (SWIR) detection in the range of ≈1300 nm, a wavelength that Si-based devices cannot properly address. Here, a seamless MoTe2 homojunction PIN diode is demonstrated, achieving the detection of visible to 1300 nm SWIR photons. This thin MoTe2 initially forms a PN junction by selective H-doping, but a PIN diode is even obtained using two split gates. Compared to the PN diode mode, the PIN mode greatly enhances the photoresponse in the visible to 1300 nm wavelength range because of the increased built-in electric field. The Franz–Keldysh effect is regarded strongly responsible for the effective absorption of 1300 nm SWIR photons in MoTe2. It is anticipated that this development may support Si photodetectors for integration on Si devices.

Original languageEnglish
Article number1900768
JournalAdvanced Optical Materials
DOIs
Publication statusPublished - 2019 Jan 1

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homojunctions
Diodes
diodes
Infrared radiation
Photons
Doping (additives)
junction diodes
Wavelength
Hydrogen
photons
atomic layer epitaxy
Atomic layer deposition
wavelengths
Photodetectors
photometers
heterojunctions
Transition metals
Heterojunctions
transition metals
Electric fields

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics

Cite this

Lee, Han Sol ; Lim, June Yeong ; Yu, Sanghyuck ; Jeong, Yeonsu ; Park, Sam ; Oh, Kyunghwan ; Hong, Seongjin ; Yang, Seunghoon ; Lee, Chul Ho ; Im, Seongil. / Seamless MoTe2 Homojunction PIN Diode toward 1300 nm Short-Wave Infrared Detection. In: Advanced Optical Materials. 2019.
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Seamless MoTe2 Homojunction PIN Diode toward 1300 nm Short-Wave Infrared Detection. / Lee, Han Sol; Lim, June Yeong; Yu, Sanghyuck; Jeong, Yeonsu; Park, Sam; Oh, Kyunghwan; Hong, Seongjin; Yang, Seunghoon; Lee, Chul Ho; Im, Seongil.

In: Advanced Optical Materials, 01.01.2019.

Research output: Contribution to journalArticle

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AU - Lee, Han Sol

AU - Lim, June Yeong

AU - Yu, Sanghyuck

AU - Jeong, Yeonsu

AU - Park, Sam

AU - Oh, Kyunghwan

AU - Hong, Seongjin

AU - Yang, Seunghoon

AU - Lee, Chul Ho

AU - Im, Seongil

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