Selective annealing of Al2O3/silicon interface by using an Nd3+: YAG laser with a wavelength of 532 nm

Sang Min Jung, Chul Jin Park, Jin Hwan Kim, Moo Whan Shin

Research output: Contribution to journalArticle

Abstract

In this report, a selective interface laser annealing (SILA) process is applied to the atomic-layer-deposited Al2O3 film/p-type silicon interface using an Nd3+: YAG laser with a wave-length of 532 nm. The absorptivity of the laser wavelength confirms a full absorption of the laser power to the Al2O3/Si interface without any loss through the Al2O3 film, which results in a successful selective annealing of the interface. Compared with conventional forming gas annealing (FGA), the SILA is found to build a thinner SiO2 interface layer and lead to a less reduction of capacitance. It is also revealed that the laser-annealed sample exhibits a surface blister density of 31 counts/mm2 which is much lower than the value of 250 counts/mm2 obtained from FGA. The suppression of the surface blister is attributed to the much shorter processing time of lasing (<60 ns) that results in reducing the interaction time between H+ and Si–H bonding and desorption of gaseous hydrogen. It is demonstrated that the ultra-short SILA processing is a promising method to enhance the interface properties of oxide/semiconductor with efficient processing time.

Original languageEnglish
Article number104956
JournalMaterials Science in Semiconductor Processing
Volume109
DOIs
Publication statusPublished - 2020 Apr

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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