Selective area crystallization of amorphous silicon using micro-patterned SiO2 capping layer

Do Kyung Kim, Woong Hee Jeong, Jung Hyeon Bae, Tae Hyung Hwang, Nam Seok Roh, Hyun Jae Kim

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

We have investigated a new crystallization technique using selective area heating (SAH) with a micro-patterned SiO2 capping layer. The purpose of SAH is to improve performance of amorphous silicon films in the presence of glass substrates with extremely low thermal budgets. The glass substrate had no damage even though the temperature of the thin heater was above 900 °C because radiant thermal energy was limited to a well-defined selective area. To reduce the crystallization time and crystallize only the active area, a micro-patterned SiO2 capping layer was used. The annealing time of SAH was under 16 W for 2 min. The crystallinity of poly-Si was investigated by Raman spectroscopy. A 400 nm-thick SiO2 film developed higher crystallinity than other SiO2 thickness films after SAH for 80 s. The crystallinity was 94%. The results show that a SiO2 capping layer can store thermal energy. We suggest SAH as a new crystallization technique for large area electronic device applications.

Original languageEnglish
Pages (from-to)2335-2338
Number of pages4
JournalJournal of Crystal Growth
Volume312
Issue number16-17
DOIs
Publication statusPublished - 2010 Jun 14

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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