We have investigated a new crystallization technique using selective area heating (SAH) with a micro-patterned SiO2 capping layer. The purpose of SAH is to improve performance of amorphous silicon films in the presence of glass substrates with extremely low thermal budgets. The glass substrate had no damage even though the temperature of the thin heater was above 900 °C because radiant thermal energy was limited to a well-defined selective area. To reduce the crystallization time and crystallize only the active area, a micro-patterned SiO2 capping layer was used. The annealing time of SAH was under 16 W for 2 min. The crystallinity of poly-Si was investigated by Raman spectroscopy. A 400 nm-thick SiO2 film developed higher crystallinity than other SiO2 thickness films after SAH for 80 s. The crystallinity was 94%. The results show that a SiO2 capping layer can store thermal energy. We suggest SAH as a new crystallization technique for large area electronic device applications.
|Number of pages||4|
|Journal||Journal of Crystal Growth|
|Publication status||Published - 2010|
Bibliographical noteFunding Information:
This work was supported by the Korea Science and Engineering Foundation ( KOSEF , R0A-2007-000-10044-0 (2007) ), the Korea Research Foundation ( KRF , KRF-2007-357-D00136 (2007) ) of the Korean Government (MOST), and the LCD Business Samsung Electronics .
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Inorganic Chemistry
- Materials Chemistry