Epitaxial complex oxide heterostructures on Si are an excellent platform for the realization of multifunctional electronic devices to exploit the unique functionalities of the oxides that Si does not possess. It is often necessary to make patterns of epitaxial films on selected areas of Si. Here, a path towards the selective area epitaxial growth of complex oxide heterostructures on Si using a hard mask lift-off technique is reported. A water-soluble oxide (Sr3Al2O6) is used as a lift-off hard mask that can survive the high temperature (~ 750 °C) and oxidizing environments for epitaxial oxide growth and be selectively etched away subsequently using deionized water. It is found that the epitaxial growth of yttria-stabilized zirconia (YSZ) buffer layers on Si is very sensitive to organic residues formed during photolithography. Island patterns of epitaxial (La, Sr)MnO3/CeO2/YSZ heterostructures are successfully fabricated on Si through the use of oxygen plasma treatment to remove residues. A simple and low-cost method to pattern complex oxide single crystals integrated on Si for the realization of multifunctional oxide-integrated electronics is provided in this study. Graphical Abstract: [Figure not available: see fulltext.]
|Number of pages||8|
|Journal||Electronic Materials Letters|
|Publication status||Published - 2023 Mar|
Bibliographical noteFunding Information:
The authors gratefully acknowledge the financial support from the National Research Foundation of Korea (NRF) Grant funded by the Ministry of Science and ICT (NRF-2020M3D1A2101933) and the Yonsei-KIST Convergence Program. H.J.C and H.C was supported by a National Research Council of Science & Technology (NST) Grant awarded by the Korea government (MSIT) (No. CAP-18-04-KRISS).
© 2022, The Author(s) under exclusive licence to The Korean Institute of Metals and Materials.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials