Selective Area Epitaxy of Complex Oxide Heterostructures on Si by Oxide Hard Mask Lift-Off

Ruiguang Ning; Soo Young Jung; Haneul Choi; Byeong hyeon Lee; Min Seok Kim; Hyung Jin Choi; Jun Young Lee; Jin Soo Park; Sung Jin Jung; Ho Won Jang; Sung Ok Won; Hye Jung Chang; Ji Soo Jang; Kyu Hyoung Lee; Byung Chul Lee; Seung Hyub Baek

doi:10.1007/s13391-022-00386-0

Selective Area Epitaxy of Complex Oxide Heterostructures on Si by Oxide Hard Mask Lift-Off

Ruiguang Ning, Soo Young Jung, Haneul Choi, Byeong hyeon Lee, Min Seok Kim, Hyung Jin Choi, Jun Young Lee, Jin Soo Park, Sung Jin Jung, Ho Won Jang, Sung Ok Won, Hye Jung Chang, Ji Soo Jang, Kyu Hyoung Lee, Byung Chul Lee, Seung Hyub Baek

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

Epitaxial complex oxide heterostructures on Si are an excellent platform for the realization of multifunctional electronic devices to exploit the unique functionalities of the oxides that Si does not possess. It is often necessary to make patterns of epitaxial films on selected areas of Si. Here, a path towards the selective area epitaxial growth of complex oxide heterostructures on Si using a hard mask lift-off technique is reported. A water-soluble oxide (Sr₃Al₂O₆) is used as a lift-off hard mask that can survive the high temperature (~ 750 °C) and oxidizing environments for epitaxial oxide growth and be selectively etched away subsequently using deionized water. It is found that the epitaxial growth of yttria-stabilized zirconia (YSZ) buffer layers on Si is very sensitive to organic residues formed during photolithography. Island patterns of epitaxial (La, Sr)MnO₃/CeO₂/YSZ heterostructures are successfully fabricated on Si through the use of oxygen plasma treatment to remove residues. A simple and low-cost method to pattern complex oxide single crystals integrated on Si for the realization of multifunctional oxide-integrated electronics is provided in this study. Graphical Abstract: [Figure not available: see fulltext.]

Original language	English
Pages (from-to)	192-199
Number of pages	8
Journal	Electronic Materials Letters
Volume	19
Issue number	2
DOIs	https://doi.org/10.1007/s13391-022-00386-0
Publication status	Published - 2023 Mar

Bibliographical note

Funding Information:
The authors gratefully acknowledge the financial support from the National Research Foundation of Korea (NRF) Grant funded by the Ministry of Science and ICT (NRF-2020M3D1A2101933) and the Yonsei-KIST Convergence Program. H.J.C and H.C was supported by a National Research Council of Science & Technology (NST) Grant awarded by the Korea government (MSIT) (No. CAP-18-04-KRISS).

Publisher Copyright:
© 2022, The Author(s) under exclusive licence to The Korean Institute of Metals and Materials.

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials

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10.1007/s13391-022-00386-0

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Ning, R., Jung, S. Y., Choi, H., Lee, B. H., Kim, M. S., Choi, H. J., Lee, J. Y., Park, J. S., Jung, S. J., Jang, H. W., Won, S. O., Chang, H. J., Jang, J. S., Lee, K. H., Lee, B. C., & Baek, S. H. (2023). Selective Area Epitaxy of Complex Oxide Heterostructures on Si by Oxide Hard Mask Lift-Off. Electronic Materials Letters, 19(2), 192-199. https://doi.org/10.1007/s13391-022-00386-0

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title = "Selective Area Epitaxy of Complex Oxide Heterostructures on Si by Oxide Hard Mask Lift-Off",

abstract = "Epitaxial complex oxide heterostructures on Si are an excellent platform for the realization of multifunctional electronic devices to exploit the unique functionalities of the oxides that Si does not possess. It is often necessary to make patterns of epitaxial films on selected areas of Si. Here, a path towards the selective area epitaxial growth of complex oxide heterostructures on Si using a hard mask lift-off technique is reported. A water-soluble oxide (Sr3Al2O6) is used as a lift-off hard mask that can survive the high temperature (~ 750 °C) and oxidizing environments for epitaxial oxide growth and be selectively etched away subsequently using deionized water. It is found that the epitaxial growth of yttria-stabilized zirconia (YSZ) buffer layers on Si is very sensitive to organic residues formed during photolithography. Island patterns of epitaxial (La, Sr)MnO3/CeO2/YSZ heterostructures are successfully fabricated on Si through the use of oxygen plasma treatment to remove residues. A simple and low-cost method to pattern complex oxide single crystals integrated on Si for the realization of multifunctional oxide-integrated electronics is provided in this study. Graphical Abstract: [Figure not available: see fulltext.]",

author = "Ruiguang Ning and Jung, {Soo Young} and Haneul Choi and Lee, {Byeong hyeon} and Kim, {Min Seok} and Choi, {Hyung Jin} and Lee, {Jun Young} and Park, {Jin Soo} and Jung, {Sung Jin} and Jang, {Ho Won} and Won, {Sung Ok} and Chang, {Hye Jung} and Jang, {Ji Soo} and Lee, {Kyu Hyoung} and Lee, {Byung Chul} and Baek, {Seung Hyub}",

note = "Funding Information: The authors gratefully acknowledge the financial support from the National Research Foundation of Korea (NRF) Grant funded by the Ministry of Science and ICT (NRF-2020M3D1A2101933) and the Yonsei-KIST Convergence Program. H.J.C and H.C was supported by a National Research Council of Science & Technology (NST) Grant awarded by the Korea government (MSIT) (No. CAP-18-04-KRISS). Publisher Copyright: {\textcopyright} 2022, The Author(s) under exclusive licence to The Korean Institute of Metals and Materials.",

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doi = "10.1007/s13391-022-00386-0",

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T1 - Selective Area Epitaxy of Complex Oxide Heterostructures on Si by Oxide Hard Mask Lift-Off

AU - Ning, Ruiguang

AU - Jung, Soo Young

AU - Choi, Haneul

AU - Lee, Byeong hyeon

AU - Kim, Min Seok

AU - Choi, Hyung Jin

AU - Lee, Jun Young

AU - Park, Jin Soo

AU - Jung, Sung Jin

AU - Jang, Ho Won

AU - Won, Sung Ok

AU - Chang, Hye Jung

AU - Jang, Ji Soo

AU - Lee, Kyu Hyoung

AU - Lee, Byung Chul

AU - Baek, Seung Hyub

N1 - Funding Information: The authors gratefully acknowledge the financial support from the National Research Foundation of Korea (NRF) Grant funded by the Ministry of Science and ICT (NRF-2020M3D1A2101933) and the Yonsei-KIST Convergence Program. H.J.C and H.C was supported by a National Research Council of Science & Technology (NST) Grant awarded by the Korea government (MSIT) (No. CAP-18-04-KRISS). Publisher Copyright: © 2022, The Author(s) under exclusive licence to The Korean Institute of Metals and Materials.

PY - 2023/3

Y1 - 2023/3

N2 - Epitaxial complex oxide heterostructures on Si are an excellent platform for the realization of multifunctional electronic devices to exploit the unique functionalities of the oxides that Si does not possess. It is often necessary to make patterns of epitaxial films on selected areas of Si. Here, a path towards the selective area epitaxial growth of complex oxide heterostructures on Si using a hard mask lift-off technique is reported. A water-soluble oxide (Sr3Al2O6) is used as a lift-off hard mask that can survive the high temperature (~ 750 °C) and oxidizing environments for epitaxial oxide growth and be selectively etched away subsequently using deionized water. It is found that the epitaxial growth of yttria-stabilized zirconia (YSZ) buffer layers on Si is very sensitive to organic residues formed during photolithography. Island patterns of epitaxial (La, Sr)MnO3/CeO2/YSZ heterostructures are successfully fabricated on Si through the use of oxygen plasma treatment to remove residues. A simple and low-cost method to pattern complex oxide single crystals integrated on Si for the realization of multifunctional oxide-integrated electronics is provided in this study. Graphical Abstract: [Figure not available: see fulltext.]

AB - Epitaxial complex oxide heterostructures on Si are an excellent platform for the realization of multifunctional electronic devices to exploit the unique functionalities of the oxides that Si does not possess. It is often necessary to make patterns of epitaxial films on selected areas of Si. Here, a path towards the selective area epitaxial growth of complex oxide heterostructures on Si using a hard mask lift-off technique is reported. A water-soluble oxide (Sr3Al2O6) is used as a lift-off hard mask that can survive the high temperature (~ 750 °C) and oxidizing environments for epitaxial oxide growth and be selectively etched away subsequently using deionized water. It is found that the epitaxial growth of yttria-stabilized zirconia (YSZ) buffer layers on Si is very sensitive to organic residues formed during photolithography. Island patterns of epitaxial (La, Sr)MnO3/CeO2/YSZ heterostructures are successfully fabricated on Si through the use of oxygen plasma treatment to remove residues. A simple and low-cost method to pattern complex oxide single crystals integrated on Si for the realization of multifunctional oxide-integrated electronics is provided in this study. Graphical Abstract: [Figure not available: see fulltext.]

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SN - 1738-8090

VL - 19

SP - 192

EP - 199

JO - Electronic Materials Letters

JF - Electronic Materials Letters

IS - 2

ER -

Selective Area Epitaxy of Complex Oxide Heterostructures on Si by Oxide Hard Mask Lift-Off

Abstract

Bibliographical note

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