We report selective area growth of large area homogeneous Bernal stacked bilayer epitaxial graphene (BLEG) on 4H-SiC (0001) substrate by electron-beam irradiation. Sublimation of Si occurs by energetic electron irradiations on SiC surface via breaking of Si-C bonds in the localized region, which allows the selective growth of graphene. Raman measurements ensure the formation of homogeneous BLEG with weak compressive strain of -0.08%. The carrier mobility of large area BLEG is ∼5100cm2V-1s-1 with a sheet carrier density of 2.2×1013cm-2. Current-voltage measurements reveal that BLEG on 4H-SiC forms a Schottky junction with an operation at mA level. Our study reveals that the barrier height at the Schottky junction is low (∼0.58eV) due to the Fermi-level pinning above the Dirac point.
|Journal||Applied Physics Letters|
|Publication status||Published - 2014 Nov 3|
Bibliographical notePublisher Copyright:
© 2014 AIP Publishing LLC.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)