Selective area growth of Bernal bilayer epitaxial graphene on 4H-SiC (0001) substrate by electron-beam irradiation

P. Dharmaraj; K. Jeganathan; S. Parthiban; J. Y. Kwon; S. Gautam; K. H. Chae; K. Asokan

doi:10.1063/1.4901074

Selective area growth of Bernal bilayer epitaxial graphene on 4H-SiC (0001) substrate by electron-beam irradiation

P. Dharmaraj, K. Jeganathan, S. Parthiban, J. Y. Kwon, S. Gautam, K. H. Chae, K. Asokan

School of Integrated Technology

Research output: Contribution to journal › Article › peer-review

12 Citations (Scopus)

Abstract

We report selective area growth of large area homogeneous Bernal stacked bilayer epitaxial graphene (BLEG) on 4H-SiC (0001) substrate by electron-beam irradiation. Sublimation of Si occurs by energetic electron irradiations on SiC surface via breaking of Si-C bonds in the localized region, which allows the selective growth of graphene. Raman measurements ensure the formation of homogeneous BLEG with weak compressive strain of -0.08%. The carrier mobility of large area BLEG is ∼5100cm²V^-1s^-1 with a sheet carrier density of 2.2×10¹³cm^-2. Current-voltage measurements reveal that BLEG on 4H-SiC forms a Schottky junction with an operation at mA level. Our study reveals that the barrier height at the Schottky junction is low (∼0.58eV) due to the Fermi-level pinning above the Dirac point.

Original language	English
Article number	181601
Journal	Applied Physics Letters
Volume	105
Issue number	18
DOIs	https://doi.org/10.1063/1.4901074
Publication status	Published - 2014 Nov 3

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© 2014 AIP Publishing LLC.

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.4901074

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title = "Selective area growth of Bernal bilayer epitaxial graphene on 4H-SiC (0001) substrate by electron-beam irradiation",

abstract = "We report selective area growth of large area homogeneous Bernal stacked bilayer epitaxial graphene (BLEG) on 4H-SiC (0001) substrate by electron-beam irradiation. Sublimation of Si occurs by energetic electron irradiations on SiC surface via breaking of Si-C bonds in the localized region, which allows the selective growth of graphene. Raman measurements ensure the formation of homogeneous BLEG with weak compressive strain of -0.08%. The carrier mobility of large area BLEG is ∼5100cm2V-1s-1 with a sheet carrier density of 2.2×1013cm-2. Current-voltage measurements reveal that BLEG on 4H-SiC forms a Schottky junction with an operation at mA level. Our study reveals that the barrier height at the Schottky junction is low (∼0.58eV) due to the Fermi-level pinning above the Dirac point.",

author = "P. Dharmaraj and K. Jeganathan and S. Parthiban and Kwon, {J. Y.} and S. Gautam and Chae, {K. H.} and K. Asokan",

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T1 - Selective area growth of Bernal bilayer epitaxial graphene on 4H-SiC (0001) substrate by electron-beam irradiation

AU - Dharmaraj, P.

AU - Jeganathan, K.

AU - Parthiban, S.

AU - Kwon, J. Y.

AU - Gautam, S.

AU - Chae, K. H.

AU - Asokan, K.

PY - 2014/11/3

Y1 - 2014/11/3

N2 - We report selective area growth of large area homogeneous Bernal stacked bilayer epitaxial graphene (BLEG) on 4H-SiC (0001) substrate by electron-beam irradiation. Sublimation of Si occurs by energetic electron irradiations on SiC surface via breaking of Si-C bonds in the localized region, which allows the selective growth of graphene. Raman measurements ensure the formation of homogeneous BLEG with weak compressive strain of -0.08%. The carrier mobility of large area BLEG is ∼5100cm2V-1s-1 with a sheet carrier density of 2.2×1013cm-2. Current-voltage measurements reveal that BLEG on 4H-SiC forms a Schottky junction with an operation at mA level. Our study reveals that the barrier height at the Schottky junction is low (∼0.58eV) due to the Fermi-level pinning above the Dirac point.

AB - We report selective area growth of large area homogeneous Bernal stacked bilayer epitaxial graphene (BLEG) on 4H-SiC (0001) substrate by electron-beam irradiation. Sublimation of Si occurs by energetic electron irradiations on SiC surface via breaking of Si-C bonds in the localized region, which allows the selective growth of graphene. Raman measurements ensure the formation of homogeneous BLEG with weak compressive strain of -0.08%. The carrier mobility of large area BLEG is ∼5100cm2V-1s-1 with a sheet carrier density of 2.2×1013cm-2. Current-voltage measurements reveal that BLEG on 4H-SiC forms a Schottky junction with an operation at mA level. Our study reveals that the barrier height at the Schottky junction is low (∼0.58eV) due to the Fermi-level pinning above the Dirac point.

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Selective area growth of Bernal bilayer epitaxial graphene on 4H-SiC (0001) substrate by electron-beam irradiation

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