Selective dispersion of highly pure large-diameter semiconducting carbon nanotubes by a flavin for thin-film transistors

Minsuk Park, Somin Kim, Hyeokjae Kwon, Sukhyun Hong, Seongil Im, Sang Yong Ju

Research output: Contribution to journalArticlepeer-review

17 Citations (Scopus)

Abstract

Scalable and simple methods for selective extraction of pure, semiconducting (s) single-walled carbon nanotubes (SWNTs) is of profound importance for electronic and photovoltaic applications. We report a new, one-step procedure to obtain respective large-diameter s- and metallic (m)-SWNT enrichment purity in excess of 99% and 78%, respectively, via interaction between the aromatic dispersing agent and SWNTs. The approach utilizes N-dodecyl isoalloxazine (FC12) as a surfactant in conjunction with sonication and benchtop centrifugation methods. After centrifugation, the supernatant is enriched in s-SWNTs with less carbonaceous impurities, whereas precipitate is enhanced in m-SWNTs. In addition, the use of an increased centrifugal force enhances both the purity and population of larger diameter s-SWNTs. Photoinduced energy transfer from FC12 to SWNTs is facilitated by respective electronic level alignment. Owing to its peculiar photoreduction capability, FC12 can be employed to precipitate SWNTs upon UV irradiation and observe absorption of higher optical transitions of SWNTs. A thin-film transistor prepared from a dispersion of enriched s-SWNTs was fabricated to verify electrical performance of the sorted sample and was observed to display p-type conductance with an average on/off ratio over 106 and an average mobility over 10 cm2/V·s.

Original languageEnglish
Pages (from-to)23270-23280
Number of pages11
JournalACS Applied Materials and Interfaces
Volume8
Issue number35
DOIs
Publication statusPublished - 2016 Sep 7

Bibliographical note

Funding Information:
This research was supported by the Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science, and Technology (2014R1A1A2055572), and in part by the Yonsei University Future-Leading Research Initiative of 2014 (2014-22-0123 and 2014-22-0168). S. Im acknowledges the financial support from NRF (NRL program: Grant No. 2014R1A2A1A01004815, Nano Materials Technology Development Program: Grant No. 2012M3A7B4034985), and Brain Korea 21 Plus Program.

Publisher Copyright:
© 2016 American Chemical Society.

All Science Journal Classification (ASJC) codes

  • Materials Science(all)

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