Selective epitaxial growth of compressively strained Ge layers on Si in 40-nm trench arrays

Byongju Kim, Sun Wook Kim, Hyunchul Jang, Jeong Hoon Kim, Sangmo Koo, Dae Hyun Kim, Byoung Gi Min, Dae Hong Ko

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

We investigated the growth of the epitaxial Ge layers in a 40 nm wide SiO2 trench array on Si by ultra-high vacuum chemical vapor deposition. If the thickness of Ge was less than the height of the SiO 2 trenches, the Ge layers grew epitaxially by a selective epitaxial growth process without any detectable surface modification, which is due to the high interfacial energy between the SiO2 mask and Ge. We calculated the critical strain required to modify the Ge surface via 3-dimensional island transition (the minimum strain) as a function of the trench width. Considering the energies involved in the transition, we found that uniformly shaped Ge layers along the trenches were energetically more favorable than those with surface undulations as the width of the trench decreased. The strained Ge epilayers relaxed their energy by forming the defects, such as dislocations at the Ge/Si interfaces and stacking faults. From the strain analyses, the residual strains for parallel and perpendicular to the trench direction in the Ge layers were - 0.72% and - 0.22%, respectively.

Original languageEnglish
Pages (from-to)55-60
Number of pages6
JournalThin Solid Films
Volume557
DOIs
Publication statusPublished - 2014 Apr 30

Fingerprint

Epitaxial growth
interfacial energy
Epilayers
Stacking faults
Ultrahigh vacuum
Dislocations (crystals)
Interfacial energy
crystal defects
ultrahigh vacuum
Surface treatment
Masks
Chemical vapor deposition
masks
vapor deposition
Defects
energy
defects

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Cite this

Kim, Byongju ; Kim, Sun Wook ; Jang, Hyunchul ; Kim, Jeong Hoon ; Koo, Sangmo ; Kim, Dae Hyun ; Min, Byoung Gi ; Ko, Dae Hong. / Selective epitaxial growth of compressively strained Ge layers on Si in 40-nm trench arrays. In: Thin Solid Films. 2014 ; Vol. 557. pp. 55-60.
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abstract = "We investigated the growth of the epitaxial Ge layers in a 40 nm wide SiO2 trench array on Si by ultra-high vacuum chemical vapor deposition. If the thickness of Ge was less than the height of the SiO 2 trenches, the Ge layers grew epitaxially by a selective epitaxial growth process without any detectable surface modification, which is due to the high interfacial energy between the SiO2 mask and Ge. We calculated the critical strain required to modify the Ge surface via 3-dimensional island transition (the minimum strain) as a function of the trench width. Considering the energies involved in the transition, we found that uniformly shaped Ge layers along the trenches were energetically more favorable than those with surface undulations as the width of the trench decreased. The strained Ge epilayers relaxed their energy by forming the defects, such as dislocations at the Ge/Si interfaces and stacking faults. From the strain analyses, the residual strains for parallel and perpendicular to the trench direction in the Ge layers were - 0.72{\%} and - 0.22{\%}, respectively.",
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Selective epitaxial growth of compressively strained Ge layers on Si in 40-nm trench arrays. / Kim, Byongju; Kim, Sun Wook; Jang, Hyunchul; Kim, Jeong Hoon; Koo, Sangmo; Kim, Dae Hyun; Min, Byoung Gi; Ko, Dae Hong.

In: Thin Solid Films, Vol. 557, 30.04.2014, p. 55-60.

Research output: Contribution to journalArticle

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AU - Koo, Sangmo

AU - Kim, Dae Hyun

AU - Min, Byoung Gi

AU - Ko, Dae Hong

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N2 - We investigated the growth of the epitaxial Ge layers in a 40 nm wide SiO2 trench array on Si by ultra-high vacuum chemical vapor deposition. If the thickness of Ge was less than the height of the SiO 2 trenches, the Ge layers grew epitaxially by a selective epitaxial growth process without any detectable surface modification, which is due to the high interfacial energy between the SiO2 mask and Ge. We calculated the critical strain required to modify the Ge surface via 3-dimensional island transition (the minimum strain) as a function of the trench width. Considering the energies involved in the transition, we found that uniformly shaped Ge layers along the trenches were energetically more favorable than those with surface undulations as the width of the trench decreased. The strained Ge epilayers relaxed their energy by forming the defects, such as dislocations at the Ge/Si interfaces and stacking faults. From the strain analyses, the residual strains for parallel and perpendicular to the trench direction in the Ge layers were - 0.72% and - 0.22%, respectively.

AB - We investigated the growth of the epitaxial Ge layers in a 40 nm wide SiO2 trench array on Si by ultra-high vacuum chemical vapor deposition. If the thickness of Ge was less than the height of the SiO 2 trenches, the Ge layers grew epitaxially by a selective epitaxial growth process without any detectable surface modification, which is due to the high interfacial energy between the SiO2 mask and Ge. We calculated the critical strain required to modify the Ge surface via 3-dimensional island transition (the minimum strain) as a function of the trench width. Considering the energies involved in the transition, we found that uniformly shaped Ge layers along the trenches were energetically more favorable than those with surface undulations as the width of the trench decreased. The strained Ge epilayers relaxed their energy by forming the defects, such as dislocations at the Ge/Si interfaces and stacking faults. From the strain analyses, the residual strains for parallel and perpendicular to the trench direction in the Ge layers were - 0.72% and - 0.22%, respectively.

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