We here report selective epitaxial growth of GaAs layers on Si (001) substrate with V-grooved trench using the aspect ratio trapping method. The V-grooved Si surface on the bottom of Si trenches was formed through a high temperature in situ baking process in H2 atmosphere before growth of GaAs in a metal-organic chemical vapor deposition (MOCVD) chamber. The evolution of the V-grooved shape and the density of defects in selectively grown GaAs epitaxial layers are reported as a function of high temperature bake times before GaAs growth by using both high resolution transmission electron microscopy (HR-TEM) and X-ray diffraction (XRD).
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All Science Journal Classification (ASJC) codes
- Biomedical Engineering
- Materials Science(all)
- Condensed Matter Physics