Selective epitaxial growth of GaAs on a Si (001) surface formed by an in situ bake in a metal-organic chemical vapor deposition reactor

Young Dae Cho, In Geun Lee, Mi Jin Jung, Hyunsu Shin, Dong Hwan Jun, Chan Soo Shin, Kyung Ho Park, Won Kyu Park, Dae Hyun Kim, Dae Hong Ko

Research output: Contribution to journalArticle

Abstract

We here report selective epitaxial growth of GaAs layers on Si (001) substrate with V-grooved trench using the aspect ratio trapping method. The V-grooved Si surface on the bottom of Si trenches was formed through a high temperature in situ baking process in H2 atmosphere before growth of GaAs in a metal-organic chemical vapor deposition (MOCVD) chamber. The evolution of the V-grooved shape and the density of defects in selectively grown GaAs epitaxial layers are reported as a function of high temperature bake times before GaAs growth by using both high resolution transmission electron microscopy (HR-TEM) and X-ray diffraction (XRD).

Original languageEnglish
Pages (from-to)3242-3246
Number of pages5
JournalJournal of Nanoscience and Nanotechnology
Volume17
Issue number5
DOIs
Publication statusPublished - 2017 Jan 1

All Science Journal Classification (ASJC) codes

  • Bioengineering
  • Chemistry(all)
  • Biomedical Engineering
  • Materials Science(all)
  • Condensed Matter Physics

Fingerprint Dive into the research topics of 'Selective epitaxial growth of GaAs on a Si (001) surface formed by an in situ bake in a metal-organic chemical vapor deposition reactor'. Together they form a unique fingerprint.

  • Cite this