Selective epitaxial growth of GaAs on a Si (001) surface formed by an in situ bake in a metal-organic chemical vapor deposition reactor

Young Dae Cho, In Geun Lee, Mi Jin Jung, Hyunsu Shin, Dong Hwan Jun, Chan Soo Shin, Kyung Ho Park, Won Kyu Park, Dae Hyun Kim, Dae Hong Ko

Research output: Contribution to journalArticle

Abstract

We here report selective epitaxial growth of GaAs layers on Si (001) substrate with V-grooved trench using the aspect ratio trapping method. The V-grooved Si surface on the bottom of Si trenches was formed through a high temperature in situ baking process in H2 atmosphere before growth of GaAs in a metal-organic chemical vapor deposition (MOCVD) chamber. The evolution of the V-grooved shape and the density of defects in selectively grown GaAs epitaxial layers are reported as a function of high temperature bake times before GaAs growth by using both high resolution transmission electron microscopy (HR-TEM) and X-ray diffraction (XRD).

Original languageEnglish
Pages (from-to)3242-3246
Number of pages5
JournalJournal of Nanoscience and Nanotechnology
Volume17
Issue number5
DOIs
Publication statusPublished - 2017 Jan 1

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Organic Chemicals
Organic chemicals
Epitaxial growth
metalorganic chemical vapor deposition
Chemical vapor deposition
Metals
reactors
Epitaxial layers
Growth
High resolution transmission electron microscopy
Aspect ratio
baking
X ray diffraction
Temperature
Defects
aspect ratio
Substrates
chambers
Transmission Electron Microscopy
Atmosphere

All Science Journal Classification (ASJC) codes

  • Medicine(all)

Cite this

Cho, Young Dae ; Lee, In Geun ; Jung, Mi Jin ; Shin, Hyunsu ; Jun, Dong Hwan ; Shin, Chan Soo ; Park, Kyung Ho ; Park, Won Kyu ; Kim, Dae Hyun ; Ko, Dae Hong. / Selective epitaxial growth of GaAs on a Si (001) surface formed by an in situ bake in a metal-organic chemical vapor deposition reactor. In: Journal of Nanoscience and Nanotechnology. 2017 ; Vol. 17, No. 5. pp. 3242-3246.
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abstract = "We here report selective epitaxial growth of GaAs layers on Si (001) substrate with V-grooved trench using the aspect ratio trapping method. The V-grooved Si surface on the bottom of Si trenches was formed through a high temperature in situ baking process in H2 atmosphere before growth of GaAs in a metal-organic chemical vapor deposition (MOCVD) chamber. The evolution of the V-grooved shape and the density of defects in selectively grown GaAs epitaxial layers are reported as a function of high temperature bake times before GaAs growth by using both high resolution transmission electron microscopy (HR-TEM) and X-ray diffraction (XRD).",
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Selective epitaxial growth of GaAs on a Si (001) surface formed by an in situ bake in a metal-organic chemical vapor deposition reactor. / Cho, Young Dae; Lee, In Geun; Jung, Mi Jin; Shin, Hyunsu; Jun, Dong Hwan; Shin, Chan Soo; Park, Kyung Ho; Park, Won Kyu; Kim, Dae Hyun; Ko, Dae Hong.

In: Journal of Nanoscience and Nanotechnology, Vol. 17, No. 5, 01.01.2017, p. 3242-3246.

Research output: Contribution to journalArticle

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T1 - Selective epitaxial growth of GaAs on a Si (001) surface formed by an in situ bake in a metal-organic chemical vapor deposition reactor

AU - Cho, Young Dae

AU - Lee, In Geun

AU - Jung, Mi Jin

AU - Shin, Hyunsu

AU - Jun, Dong Hwan

AU - Shin, Chan Soo

AU - Park, Kyung Ho

AU - Park, Won Kyu

AU - Kim, Dae Hyun

AU - Ko, Dae Hong

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AB - We here report selective epitaxial growth of GaAs layers on Si (001) substrate with V-grooved trench using the aspect ratio trapping method. The V-grooved Si surface on the bottom of Si trenches was formed through a high temperature in situ baking process in H2 atmosphere before growth of GaAs in a metal-organic chemical vapor deposition (MOCVD) chamber. The evolution of the V-grooved shape and the density of defects in selectively grown GaAs epitaxial layers are reported as a function of high temperature bake times before GaAs growth by using both high resolution transmission electron microscopy (HR-TEM) and X-ray diffraction (XRD).

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