Selective epitaxial growth of Si 1-xGe x films via the alternating gas supply of Si 2H 6, GeH 4, and Cl 2

Effects of Cl 2 exposure

Sang Joon Park, Sunggi Baik, Hyungjun Kim

Research output: Contribution to journalArticle

Abstract

Si 1-xGe x films were epitaxially grown on Si(0 0 1) substrates at various ratios of flow rates of Si 2H 6 and GeH 4. Si 1-xGe x films were also selectively grown on Si windows through modified alternating gas supply manner, repeating the unit cycle which consists of the Si 1-xGe x growth step and Cl 2 exposure step. Injection of Cl 2 enhanced the selectivity of the selective growth of Si 1-xGe x by etching away the spurious nuclei or deposits formed on oxide area. The separate addition of Cl 2 resulted in decrease of the growth rate and Ge concentration of Si 1-xGe x film. Meanwhile, Ge concentration in Si 1-xGe x films was insignificantly affected by the variation of the flow rates and exposure durations of Cl 2.

Original languageEnglish
Pages (from-to)89-92
Number of pages4
JournalMaterials Letters
Volume88
DOIs
Publication statusPublished - 2012 Dec 1

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Gas supply
Epitaxial growth
gases
flow velocity
Flow rate
Oxides
Etching
Deposits
selectivity
deposits
etching
injection
cycles
nuclei
oxides
Substrates

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

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title = "Selective epitaxial growth of Si 1-xGe x films via the alternating gas supply of Si 2H 6, GeH 4, and Cl 2: Effects of Cl 2 exposure",
abstract = "Si 1-xGe x films were epitaxially grown on Si(0 0 1) substrates at various ratios of flow rates of Si 2H 6 and GeH 4. Si 1-xGe x films were also selectively grown on Si windows through modified alternating gas supply manner, repeating the unit cycle which consists of the Si 1-xGe x growth step and Cl 2 exposure step. Injection of Cl 2 enhanced the selectivity of the selective growth of Si 1-xGe x by etching away the spurious nuclei or deposits formed on oxide area. The separate addition of Cl 2 resulted in decrease of the growth rate and Ge concentration of Si 1-xGe x film. Meanwhile, Ge concentration in Si 1-xGe x films was insignificantly affected by the variation of the flow rates and exposure durations of Cl 2.",
author = "Park, {Sang Joon} and Sunggi Baik and Hyungjun Kim",
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Selective epitaxial growth of Si 1-xGe x films via the alternating gas supply of Si 2H 6, GeH 4, and Cl 2 : Effects of Cl 2 exposure. / Park, Sang Joon; Baik, Sunggi; Kim, Hyungjun.

In: Materials Letters, Vol. 88, 01.12.2012, p. 89-92.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Selective epitaxial growth of Si 1-xGe x films via the alternating gas supply of Si 2H 6, GeH 4, and Cl 2

T2 - Effects of Cl 2 exposure

AU - Park, Sang Joon

AU - Baik, Sunggi

AU - Kim, Hyungjun

PY - 2012/12/1

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AB - Si 1-xGe x films were epitaxially grown on Si(0 0 1) substrates at various ratios of flow rates of Si 2H 6 and GeH 4. Si 1-xGe x films were also selectively grown on Si windows through modified alternating gas supply manner, repeating the unit cycle which consists of the Si 1-xGe x growth step and Cl 2 exposure step. Injection of Cl 2 enhanced the selectivity of the selective growth of Si 1-xGe x by etching away the spurious nuclei or deposits formed on oxide area. The separate addition of Cl 2 resulted in decrease of the growth rate and Ge concentration of Si 1-xGe x film. Meanwhile, Ge concentration in Si 1-xGe x films was insignificantly affected by the variation of the flow rates and exposure durations of Cl 2.

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