Si 1-xGe x films were epitaxially grown on Si(0 0 1) substrates at various ratios of flow rates of Si 2H 6 and GeH 4. Si 1-xGe x films were also selectively grown on Si windows through modified alternating gas supply manner, repeating the unit cycle which consists of the Si 1-xGe x growth step and Cl 2 exposure step. Injection of Cl 2 enhanced the selectivity of the selective growth of Si 1-xGe x by etching away the spurious nuclei or deposits formed on oxide area. The separate addition of Cl 2 resulted in decrease of the growth rate and Ge concentration of Si 1-xGe x film. Meanwhile, Ge concentration in Si 1-xGe x films was insignificantly affected by the variation of the flow rates and exposure durations of Cl 2.
All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering