Selective epitaxial growth of Si 1-xGe x films via the alternating gas supply of Si 2H 6, GeH 4, and Cl 2: Effects of Cl 2 exposure

Sang Joon Park; Sunggi Baik; Hyugjun Kim

doi:10.1016/j.matlet.2012.08.036

Selective epitaxial growth of Si _1-xGe _x films via the alternating gas supply of Si ₂H ₆, GeH ₄, and Cl ₂: Effects of Cl ₂ exposure

Sang Joon Park, Sunggi Baik, Hyugjun Kim

Department of Electrical and Electronic Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

Si _1-xGe _x films were epitaxially grown on Si(0 0 1) substrates at various ratios of flow rates of Si ₂H ₆ and GeH ₄. Si _1-xGe _x films were also selectively grown on Si windows through modified alternating gas supply manner, repeating the unit cycle which consists of the Si _1-xGe _x growth step and Cl ₂ exposure step. Injection of Cl ₂ enhanced the selectivity of the selective growth of Si _1-xGe _x by etching away the spurious nuclei or deposits formed on oxide area. The separate addition of Cl ₂ resulted in decrease of the growth rate and Ge concentration of Si _1-xGe _x film. Meanwhile, Ge concentration in Si _1-xGe _x films was insignificantly affected by the variation of the flow rates and exposure durations of Cl ₂.

Original language	English
Pages (from-to)	89-92
Number of pages	4
Journal	Materials Letters
Volume	88
DOIs	https://doi.org/10.1016/j.matlet.2012.08.036
Publication status	Published - 2012 Dec 1

All Science Journal Classification (ASJC) codes

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Access to Document

10.1016/j.matlet.2012.08.036

Fingerprint Dive into the research topics of 'Selective epitaxial growth of Si 1-xGe x films via the alternating gas supply of Si 2H 6, GeH 4, and Cl 2: Effects of Cl 2 exposure'. Together they form a unique fingerprint.

Cite this

@article{9cf97d66d5b840f3afc42ef438bfa355,

title = "Selective epitaxial growth of Si 1-xGe x films via the alternating gas supply of Si 2H 6, GeH 4, and Cl 2: Effects of Cl 2 exposure",

abstract = "Si 1-xGe x films were epitaxially grown on Si(0 0 1) substrates at various ratios of flow rates of Si 2H 6 and GeH 4. Si 1-xGe x films were also selectively grown on Si windows through modified alternating gas supply manner, repeating the unit cycle which consists of the Si 1-xGe x growth step and Cl 2 exposure step. Injection of Cl 2 enhanced the selectivity of the selective growth of Si 1-xGe x by etching away the spurious nuclei or deposits formed on oxide area. The separate addition of Cl 2 resulted in decrease of the growth rate and Ge concentration of Si 1-xGe x film. Meanwhile, Ge concentration in Si 1-xGe x films was insignificantly affected by the variation of the flow rates and exposure durations of Cl 2.",

author = "Park, {Sang Joon} and Sunggi Baik and Hyugjun Kim",

year = "2012",

month = dec,

day = "1",

doi = "10.1016/j.matlet.2012.08.036",

language = "English",

volume = "88",

pages = "89--92",

journal = "Materials Letters",

issn = "0167-577X",

publisher = "Elsevier",

}

TY - JOUR

T1 - Selective epitaxial growth of Si 1-xGe x films via the alternating gas supply of Si 2H 6, GeH 4, and Cl 2

T2 - Effects of Cl 2 exposure

AU - Park, Sang Joon

AU - Baik, Sunggi

AU - Kim, Hyugjun

PY - 2012/12/1

Y1 - 2012/12/1

N2 - Si 1-xGe x films were epitaxially grown on Si(0 0 1) substrates at various ratios of flow rates of Si 2H 6 and GeH 4. Si 1-xGe x films were also selectively grown on Si windows through modified alternating gas supply manner, repeating the unit cycle which consists of the Si 1-xGe x growth step and Cl 2 exposure step. Injection of Cl 2 enhanced the selectivity of the selective growth of Si 1-xGe x by etching away the spurious nuclei or deposits formed on oxide area. The separate addition of Cl 2 resulted in decrease of the growth rate and Ge concentration of Si 1-xGe x film. Meanwhile, Ge concentration in Si 1-xGe x films was insignificantly affected by the variation of the flow rates and exposure durations of Cl 2.

AB - Si 1-xGe x films were epitaxially grown on Si(0 0 1) substrates at various ratios of flow rates of Si 2H 6 and GeH 4. Si 1-xGe x films were also selectively grown on Si windows through modified alternating gas supply manner, repeating the unit cycle which consists of the Si 1-xGe x growth step and Cl 2 exposure step. Injection of Cl 2 enhanced the selectivity of the selective growth of Si 1-xGe x by etching away the spurious nuclei or deposits formed on oxide area. The separate addition of Cl 2 resulted in decrease of the growth rate and Ge concentration of Si 1-xGe x film. Meanwhile, Ge concentration in Si 1-xGe x films was insignificantly affected by the variation of the flow rates and exposure durations of Cl 2.

UR - http://www.scopus.com/inward/record.url?scp=84866600607&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84866600607&partnerID=8YFLogxK

U2 - 10.1016/j.matlet.2012.08.036

DO - 10.1016/j.matlet.2012.08.036

M3 - Article

AN - SCOPUS:84866600607

VL - 88

SP - 89

EP - 92

JO - Materials Letters

JF - Materials Letters

SN - 0167-577X

ER -