Abstract
Si 1-xGe x films were epitaxially grown on Si(0 0 1) substrates at various ratios of flow rates of Si 2H 6 and GeH 4. Si 1-xGe x films were also selectively grown on Si windows through modified alternating gas supply manner, repeating the unit cycle which consists of the Si 1-xGe x growth step and Cl 2 exposure step. Injection of Cl 2 enhanced the selectivity of the selective growth of Si 1-xGe x by etching away the spurious nuclei or deposits formed on oxide area. The separate addition of Cl 2 resulted in decrease of the growth rate and Ge concentration of Si 1-xGe x film. Meanwhile, Ge concentration in Si 1-xGe x films was insignificantly affected by the variation of the flow rates and exposure durations of Cl 2.
| Original language | English |
|---|---|
| Pages (from-to) | 89-92 |
| Number of pages | 4 |
| Journal | Materials Letters |
| Volume | 88 |
| DOIs | |
| Publication status | Published - 2012 Dec 1 |
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All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering
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Selective epitaxial growth of Si 1-xGe x films via the alternating gas supply of Si 2H 6, GeH 4, and Cl 2 : Effects of Cl 2 exposure. / Park, Sang Joon; Baik, Sunggi; Kim, Hyungjun.
In: Materials Letters, Vol. 88, 01.12.2012, p. 89-92.Research output: Contribution to journal › Article
TY - JOUR
T1 - Selective epitaxial growth of Si 1-xGe x films via the alternating gas supply of Si 2H 6, GeH 4, and Cl 2
T2 - Effects of Cl 2 exposure
AU - Park, Sang Joon
AU - Baik, Sunggi
AU - Kim, Hyungjun
PY - 2012/12/1
Y1 - 2012/12/1
N2 - Si 1-xGe x films were epitaxially grown on Si(0 0 1) substrates at various ratios of flow rates of Si 2H 6 and GeH 4. Si 1-xGe x films were also selectively grown on Si windows through modified alternating gas supply manner, repeating the unit cycle which consists of the Si 1-xGe x growth step and Cl 2 exposure step. Injection of Cl 2 enhanced the selectivity of the selective growth of Si 1-xGe x by etching away the spurious nuclei or deposits formed on oxide area. The separate addition of Cl 2 resulted in decrease of the growth rate and Ge concentration of Si 1-xGe x film. Meanwhile, Ge concentration in Si 1-xGe x films was insignificantly affected by the variation of the flow rates and exposure durations of Cl 2.
AB - Si 1-xGe x films were epitaxially grown on Si(0 0 1) substrates at various ratios of flow rates of Si 2H 6 and GeH 4. Si 1-xGe x films were also selectively grown on Si windows through modified alternating gas supply manner, repeating the unit cycle which consists of the Si 1-xGe x growth step and Cl 2 exposure step. Injection of Cl 2 enhanced the selectivity of the selective growth of Si 1-xGe x by etching away the spurious nuclei or deposits formed on oxide area. The separate addition of Cl 2 resulted in decrease of the growth rate and Ge concentration of Si 1-xGe x film. Meanwhile, Ge concentration in Si 1-xGe x films was insignificantly affected by the variation of the flow rates and exposure durations of Cl 2.
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U2 - 10.1016/j.matlet.2012.08.036
DO - 10.1016/j.matlet.2012.08.036
M3 - Article
VL - 88
SP - 89
EP - 92
JO - Materials Letters
JF - Materials Letters
SN - 0167-577X
ER -