HfO2 thin films were etched using an Ar/C4F 8 inductively-coupled plasma (ICP) for high etch selectivity of HfO2/Si and the fluorocarbon remaining on the silicon surface after the HfO2 etching was removed by using an oxygen ICP and its effect was investigated. The etching of HfO2 using Ar/C4F 8 magnetically-enhanced ICP (MEICP) improved the etch selectivity of HfO2/Si by more than three times, possibly due to the differences in the thicknesses of the fluorocarbon polymer layers formed on the surfaces of HfO2 and Si. In addition, the oxygen ICP treatment after the HfO 2 thin film etching by using Ar/C4F8 ICP removed the polymer layer on the silicon surface effectively, so for the HfO2-nMOSFET (n-type metal-oxied-semiconductor-field-effect- transistors) devices, an improvement in drain current of more than 60 % could be observed after the O2 ICP treatment.
|Number of pages||5|
|Journal||Journal of the Korean Physical Society|
|Publication status||Published - 2008 Sept|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)