Selective growth of Ge islands on nanometer-scale patterned SiO 2/Si substrate by molecular beam epitaxy

Tae Sik Yoon, Zuoming Zhao, Jian Liu, Ya Hong Xie, Du Yeol Ryu, Thomas P. Russell, Hyun Mi Kim, Ki Bum Kim

Research output: Contribution to journalArticle

22 Citations (Scopus)

Abstract

The authors studied the selective growth of Ge islands by molecular beam epitaxy on Si(001) covered with nanometer-scale patterned SiO 2 mask generated using self-assembled diblock copolymer. Selective growth is made possible by Ge adatoms desorbing from the SiO 2 surface as well as diffusing into the exposed Si area. For the Ge coverage of 2 nm, multiple islands are observed along the periphery of individual exposed Si areas. At 3.5 nm coverage, the coalescence of small islands with significant strain relaxation becomes evident. The ramifications of the multiple islands morphology and their coalescence on potential device applications are discussed.

Original languageEnglish
Article number063107
JournalApplied Physics Letters
Volume89
Issue number6
DOIs
Publication statusPublished - 2006 Aug 18

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molecular beam epitaxy
coalescing
adatoms
copolymers
masks

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Yoon, Tae Sik ; Zhao, Zuoming ; Liu, Jian ; Xie, Ya Hong ; Ryu, Du Yeol ; Russell, Thomas P. ; Kim, Hyun Mi ; Kim, Ki Bum. / Selective growth of Ge islands on nanometer-scale patterned SiO 2/Si substrate by molecular beam epitaxy. In: Applied Physics Letters. 2006 ; Vol. 89, No. 6.
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Selective growth of Ge islands on nanometer-scale patterned SiO 2/Si substrate by molecular beam epitaxy. / Yoon, Tae Sik; Zhao, Zuoming; Liu, Jian; Xie, Ya Hong; Ryu, Du Yeol; Russell, Thomas P.; Kim, Hyun Mi; Kim, Ki Bum.

In: Applied Physics Letters, Vol. 89, No. 6, 063107, 18.08.2006.

Research output: Contribution to journalArticle

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AU - Yoon, Tae Sik

AU - Zhao, Zuoming

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AU - Russell, Thomas P.

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