Abstract
Selective formation of ZnO nanodots grown by metalorganic chemical vapor deposition (MOCVD) was achieved on focused-ion beam (FIB)-nanopatterned SiO 2 and Si substrates. The selective formation characteristics, dimension, and density of ZnO nanodots on FIB-nanopatterned substrates strongly depended on the FIB-patterning and MOCVD-growth conditions. The mechanism of the selective formation of ZnO nanodots on FIB-nanopatterned SiO2 substrates is attributed to a surfactant effect of the implanted Ga which leads to the formation of the preferred nucleation sites for the growth of ZnO nanodots, while that of ZnO nanodots on nanopatterned Si substrates is mainly considered in terms of the generation of surface atomic steps and kinks, which are created by Ga+ ion sputtering, on the patterned Si areas.
| Original language | English |
|---|---|
| Pages (from-to) | 601-605 |
| Number of pages | 5 |
| Journal | Physica E: Low-Dimensional Systems and Nanostructures |
| Volume | 21 |
| Issue number | 2-4 |
| DOIs | |
| Publication status | Published - 2004 Mar |
| Event | Proceedings of the Eleventh International Conference on Modulation (MSS11) - Nara, Japan Duration: 2003 Jul 14 → 2003 Jul 18 |
Bibliographical note
Funding Information:This work was supported in part by Grants for Regional Science and Technology Promotion and also by Grant-in-Aid for Scientific Research from the Ministry of Education, Culture, Sports, Science, and Technology. One of the authors (S.-W. Kim) would like to thank financial support from “International Communications Foundation (ICF), Fellowship for Researchers and Graduate Students from Abroad” and “The 21st Century COE Program, Project 14213201”.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics