Selective incorporation of colloidal nanocrystals in nanopatterned SiO 2 layer for nanocrystal memory device

Il Seo, Do Joong Lee, Quanli Hu, Chang Woo Kwon, Kipil Lim, Seung Hyun Lee, Hyun Mi Kim, Yong Sang Kim, Hyun Ho Lee, Du Yeol Ryu, Ki Bum Kim, Tae Sik Yoon

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Abstract

CdSe colloidal nanocrystals with a size of ∼5 nm were selectively incorporated in SiO2 nanopatterns formed by a self-assembled diblock copolymer patterning through a simple dip-coating process. The selective incorporation was achieved by capillary force, which drives the nanocrystals into the patterns during solvent evaporation in dip-coating. The capacitor structures of an Al-gate/atomic layer deposition- Al2 O3 (27 nm) /CdSe (5 nm)/patterned SiO2 (25 nm) /p-Si substrate were fabricated to characterize the charging/discharging behavior for a memory device. The flatband voltage shift was observed by a charge transport between the gate and the nanocrystals. It demonstrates the colloidal nanocrystal application to a memory device through selective incorporation in regularly ordered nanopatterns by a simple dip-coating process.

Original languageEnglish
Pages (from-to)K19-K21
JournalElectrochemical and Solid-State Letters
Volume13
Issue number3
DOIs
Publication statusPublished - 2010

All Science Journal Classification (ASJC) codes

  • Chemical Engineering(all)
  • Materials Science(all)
  • Physical and Theoretical Chemistry
  • Electrochemistry
  • Electrical and Electronic Engineering

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    Seo, I., Lee, D. J., Hu, Q., Kwon, C. W., Lim, K., Lee, S. H., Kim, H. M., Kim, Y. S., Lee, H. H., Ryu, D. Y., Kim, K. B., & Yoon, T. S. (2010). Selective incorporation of colloidal nanocrystals in nanopatterned SiO 2 layer for nanocrystal memory device. Electrochemical and Solid-State Letters, 13(3), K19-K21. https://doi.org/10.1149/1.3271025