Selective metal deposition at graphene line defects by atomic layer deposition

Kwanpyo Kim, Han Bo Ram Lee, Richard W. Johnson, Jukka T. Tanskanen, Nan Liu, Myung Gil Kim, Changhyun Pang, Chiyui Ahn, Stacey F. Bent, Zhenan Bao

Research output: Contribution to journalArticle

117 Citations (Scopus)

Abstract

One-dimensional defects in graphene have a strong influence on its physical properties, such as electrical charge transport and mechanical strength. With enhanced chemical reactivity, such defects may also allow us to selectively functionalize the material and systematically tune the properties of graphene. Here we demonstrate the selective deposition of metal at chemical vapour deposited graphene's line defects, notably grain boundaries, by atomic layer deposition. Atomic layer deposition allows us to deposit Pt predominantly on graphene's grain boundaries, folds and cracks due to the enhanced chemical reactivity of these line defects, which is directly confirmed by transmission electron microscopy imaging. The selective functionalization of graphene defect sites, together with the nanowire morphology of deposited Pt, yields a superior platform for sensing applications. Using Pt-graphene hybrid structures, we demonstrate high-performance hydrogen gas sensors at room temperature and show its advantages over other evaporative Pt deposition methods, in which Pt decorates the graphene surface non-selectively.

Original languageEnglish
Article number4781
JournalNature communications
Volume5
DOIs
Publication statusPublished - 2014 Sep 2

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Graphite
Atomic layer deposition
atomic layer epitaxy
graphene
Metals
Defects
defects
metals
Chemical reactivity
Grain boundaries
reactivity
grain boundaries
Nanowires
hybrid structures
Chemical sensors
Transmission Electron Microscopy
Strength of materials
Charge transfer
Hydrogen
nanowires

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Biochemistry, Genetics and Molecular Biology(all)
  • Physics and Astronomy(all)

Cite this

Kim, K., Lee, H. B. R., Johnson, R. W., Tanskanen, J. T., Liu, N., Kim, M. G., ... Bao, Z. (2014). Selective metal deposition at graphene line defects by atomic layer deposition. Nature communications, 5, [4781]. https://doi.org/10.1038/ncomms5781
Kim, Kwanpyo ; Lee, Han Bo Ram ; Johnson, Richard W. ; Tanskanen, Jukka T. ; Liu, Nan ; Kim, Myung Gil ; Pang, Changhyun ; Ahn, Chiyui ; Bent, Stacey F. ; Bao, Zhenan. / Selective metal deposition at graphene line defects by atomic layer deposition. In: Nature communications. 2014 ; Vol. 5.
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Kim, K, Lee, HBR, Johnson, RW, Tanskanen, JT, Liu, N, Kim, MG, Pang, C, Ahn, C, Bent, SF & Bao, Z 2014, 'Selective metal deposition at graphene line defects by atomic layer deposition', Nature communications, vol. 5, 4781. https://doi.org/10.1038/ncomms5781

Selective metal deposition at graphene line defects by atomic layer deposition. / Kim, Kwanpyo; Lee, Han Bo Ram; Johnson, Richard W.; Tanskanen, Jukka T.; Liu, Nan; Kim, Myung Gil; Pang, Changhyun; Ahn, Chiyui; Bent, Stacey F.; Bao, Zhenan.

In: Nature communications, Vol. 5, 4781, 02.09.2014.

Research output: Contribution to journalArticle

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