Selective metallization of amorphous-indium-gallium-zinc-oxide thin-film transistor by using helium plasma treatment

Hun Jang, Su Jeong Lee, Yoann Porte, Jae Min Myoung

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

In this study, the effects of helium (He) plasma treatment on amorphous-indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) have been investigated. The He plasma treatment induced a dramatic decrease of the resistivity in a-IGZO thin films from 1.25 ×106 to 5.93 mΩ cm. After 5 min He plasma treatment, the a-IGZO films showed an increase in carrier concentration to 6.70 ×1019 cm-3 combined with a high hall mobility of 15.7 cm2 V-1 s-1. The conductivity improvement was linked to the formation of oxygen vacancies during the He plasma treatment, which was observed by x-ray photoelectron spectroscopy analysis. The a-IGZO films did not appear to be damaged on the surface following the plasma treatment and showed a high transmittance of about 88.3% at a wavelength of 550 nm. The He plasma-treated a-IGZO films were used as source/drain (S/D) electrodes in a-IGZO TFTs. The devices demonstrated promising characteristics, on pair with TFTs using Al electrodes, with a threshold voltage (V T) of -1.97 V, sub-threshold slope (SS) of 0.52 V/decade, saturation mobility (μ sat) of 8.75 cm2 V-1 s-1, and on/off current ratio (I on/I off) of 2.66 ×108.

Original languageEnglish
Article number035011
JournalSemiconductor Science and Technology
Volume33
Issue number3
DOIs
Publication statusPublished - 2018 Feb 14

Fingerprint

Zinc Oxide
gallium oxides
helium plasma
Helium
Gallium
Indium
Thin film transistors
Metallizing
Zinc oxide
zinc oxides
Oxide films
indium
transistors
Plasmas
thin films
oxide films
Hall mobility
Electrodes
electrodes
Oxygen vacancies

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

@article{9b48f973b0bf4ba8a0478723b92b6fc8,
title = "Selective metallization of amorphous-indium-gallium-zinc-oxide thin-film transistor by using helium plasma treatment",
abstract = "In this study, the effects of helium (He) plasma treatment on amorphous-indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) have been investigated. The He plasma treatment induced a dramatic decrease of the resistivity in a-IGZO thin films from 1.25 ×106 to 5.93 mΩ cm. After 5 min He plasma treatment, the a-IGZO films showed an increase in carrier concentration to 6.70 ×1019 cm-3 combined with a high hall mobility of 15.7 cm2 V-1 s-1. The conductivity improvement was linked to the formation of oxygen vacancies during the He plasma treatment, which was observed by x-ray photoelectron spectroscopy analysis. The a-IGZO films did not appear to be damaged on the surface following the plasma treatment and showed a high transmittance of about 88.3{\%} at a wavelength of 550 nm. The He plasma-treated a-IGZO films were used as source/drain (S/D) electrodes in a-IGZO TFTs. The devices demonstrated promising characteristics, on pair with TFTs using Al electrodes, with a threshold voltage (V T) of -1.97 V, sub-threshold slope (SS) of 0.52 V/decade, saturation mobility (μ sat) of 8.75 cm2 V-1 s-1, and on/off current ratio (I on/I off) of 2.66 ×108.",
author = "Hun Jang and Lee, {Su Jeong} and Yoann Porte and Myoung, {Jae Min}",
year = "2018",
month = "2",
day = "14",
doi = "10.1088/1361-6641/aaa9e7",
language = "English",
volume = "33",
journal = "Semiconductor Science and Technology",
issn = "0268-1242",
publisher = "IOP Publishing Ltd.",
number = "3",

}

Selective metallization of amorphous-indium-gallium-zinc-oxide thin-film transistor by using helium plasma treatment. / Jang, Hun; Lee, Su Jeong; Porte, Yoann; Myoung, Jae Min.

In: Semiconductor Science and Technology, Vol. 33, No. 3, 035011, 14.02.2018.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Selective metallization of amorphous-indium-gallium-zinc-oxide thin-film transistor by using helium plasma treatment

AU - Jang, Hun

AU - Lee, Su Jeong

AU - Porte, Yoann

AU - Myoung, Jae Min

PY - 2018/2/14

Y1 - 2018/2/14

N2 - In this study, the effects of helium (He) plasma treatment on amorphous-indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) have been investigated. The He plasma treatment induced a dramatic decrease of the resistivity in a-IGZO thin films from 1.25 ×106 to 5.93 mΩ cm. After 5 min He plasma treatment, the a-IGZO films showed an increase in carrier concentration to 6.70 ×1019 cm-3 combined with a high hall mobility of 15.7 cm2 V-1 s-1. The conductivity improvement was linked to the formation of oxygen vacancies during the He plasma treatment, which was observed by x-ray photoelectron spectroscopy analysis. The a-IGZO films did not appear to be damaged on the surface following the plasma treatment and showed a high transmittance of about 88.3% at a wavelength of 550 nm. The He plasma-treated a-IGZO films were used as source/drain (S/D) electrodes in a-IGZO TFTs. The devices demonstrated promising characteristics, on pair with TFTs using Al electrodes, with a threshold voltage (V T) of -1.97 V, sub-threshold slope (SS) of 0.52 V/decade, saturation mobility (μ sat) of 8.75 cm2 V-1 s-1, and on/off current ratio (I on/I off) of 2.66 ×108.

AB - In this study, the effects of helium (He) plasma treatment on amorphous-indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) have been investigated. The He plasma treatment induced a dramatic decrease of the resistivity in a-IGZO thin films from 1.25 ×106 to 5.93 mΩ cm. After 5 min He plasma treatment, the a-IGZO films showed an increase in carrier concentration to 6.70 ×1019 cm-3 combined with a high hall mobility of 15.7 cm2 V-1 s-1. The conductivity improvement was linked to the formation of oxygen vacancies during the He plasma treatment, which was observed by x-ray photoelectron spectroscopy analysis. The a-IGZO films did not appear to be damaged on the surface following the plasma treatment and showed a high transmittance of about 88.3% at a wavelength of 550 nm. The He plasma-treated a-IGZO films were used as source/drain (S/D) electrodes in a-IGZO TFTs. The devices demonstrated promising characteristics, on pair with TFTs using Al electrodes, with a threshold voltage (V T) of -1.97 V, sub-threshold slope (SS) of 0.52 V/decade, saturation mobility (μ sat) of 8.75 cm2 V-1 s-1, and on/off current ratio (I on/I off) of 2.66 ×108.

UR - http://www.scopus.com/inward/record.url?scp=85043466458&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85043466458&partnerID=8YFLogxK

U2 - 10.1088/1361-6641/aaa9e7

DO - 10.1088/1361-6641/aaa9e7

M3 - Article

VL - 33

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

SN - 0268-1242

IS - 3

M1 - 035011

ER -