Selective phase modulation of NiSi using N-ion implantation for high performance dopant-segregated source/drain n-channel MOSFETs

W. Y. Loh, P. Y. Hung, B. E. Coss, P. Kalra, Injo Ok, Greg Smith, C. Y. Kang, S. H. Lee, J. Oh, B. Sassman, P. Majhi, P. Kirsch, H. H. Tseng, R. Jammy

Research output: Chapter in Book/Report/Conference proceedingConference contribution

12 Citations (Scopus)

Abstract

We have developed a novel dual phase-modulated Ni silicide for Schottky barrier and series resistance reduction in dopant-segregated source/drain (DSS) n-MOSFETs. Using pre-silicide N2+ implant (thereafter N-implant), it is possible to selectively form interfacial epitaxial Si-rich NiSi2, reducing electron Schottky barrier(SB) from 0.7eV to 0.34 eV while maintaining a low resistive bulk NiSi, at the same silicide formation temperature. Dual phase-modulated NiSi shows enhanced thermal stability up to 750°C, low ρs of 26 μΩcm and SB modulation Δφ Bn = 0.36 eV (expected 81% reduction in contact resistance R c). Saturation gm for phase-modulated N-modulated DSS n-FETs shows 32% improvement over control NiSi with 22% reduction in series resistance Rext, while still maintaining CMOS integratability.

Original languageEnglish
Title of host publication2009 Symposium on VLSI Technology, VLSIT 2009
Pages100-101
Number of pages2
Publication statusPublished - 2009 Nov 16
Event2009 Symposium on VLSI Technology, VLSIT 2009 - Kyoto, Japan
Duration: 2009 Jun 162009 Jun 18

Publication series

NameDigest of Technical Papers - Symposium on VLSI Technology
ISSN (Print)0743-1562

Other

Other2009 Symposium on VLSI Technology, VLSIT 2009
CountryJapan
CityKyoto
Period09/6/1609/6/18

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All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

Cite this

Loh, W. Y., Hung, P. Y., Coss, B. E., Kalra, P., Ok, I., Smith, G., Kang, C. Y., Lee, S. H., Oh, J., Sassman, B., Majhi, P., Kirsch, P., Tseng, H. H., & Jammy, R. (2009). Selective phase modulation of NiSi using N-ion implantation for high performance dopant-segregated source/drain n-channel MOSFETs. In 2009 Symposium on VLSI Technology, VLSIT 2009 (pp. 100-101). [5200648] (Digest of Technical Papers - Symposium on VLSI Technology).