Selective phase modulation of NiSi using N-ion implantation for high performance dopant-segregated source/drain n-channel MOSFETs

W. Y. Loh, P. Y. Hung, B. E. Coss, P. Kalra, Injo Ok, Greg Smith, C. Y. Kang, S. H. Lee, Jungwoo Oh, B. Sassman, P. Majhi, P. Kirsch, H. H. Tseng, R. Jammy

Research output: Chapter in Book/Report/Conference proceedingConference contribution

12 Citations (Scopus)

Abstract

We have developed a novel dual phase-modulated Ni silicide for Schottky barrier and series resistance reduction in dopant-segregated source/drain (DSS) n-MOSFETs. Using pre-silicide N2 + implant (thereafter N-implant), it is possible to selectively form interfacial epitaxial Si-rich NiSi2, reducing electron Schottky barrier(SB) from 0.7eV to 0.34 eV while maintaining a low resistive bulk NiSi, at the same silicide formation temperature. Dual phase-modulated NiSi shows enhanced thermal stability up to 750°C, low ρs of 26 μΩcm and SB modulation Δφ Bn = 0.36 eV (expected 81% reduction in contact resistance R c). Saturation gm for phase-modulated N-modulated DSS n-FETs shows 32% improvement over control NiSi with 22% reduction in series resistance Rext, while still maintaining CMOS integratability.

Original languageEnglish
Title of host publication2009 Symposium on VLSI Technology, VLSIT 2009
Pages100-101
Number of pages2
Publication statusPublished - 2009 Nov 16
Event2009 Symposium on VLSI Technology, VLSIT 2009 - Kyoto, Japan
Duration: 2009 Jun 162009 Jun 18

Other

Other2009 Symposium on VLSI Technology, VLSIT 2009
CountryJapan
CityKyoto
Period09/6/1609/6/18

Fingerprint

Phase modulation
Ion implantation
Doping (additives)
Contact resistance
Field effect transistors
Thermodynamic stability
Modulation
Electrons
Temperature

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

Cite this

Loh, W. Y., Hung, P. Y., Coss, B. E., Kalra, P., Ok, I., Smith, G., ... Jammy, R. (2009). Selective phase modulation of NiSi using N-ion implantation for high performance dopant-segregated source/drain n-channel MOSFETs. In 2009 Symposium on VLSI Technology, VLSIT 2009 (pp. 100-101). [5200648]
Loh, W. Y. ; Hung, P. Y. ; Coss, B. E. ; Kalra, P. ; Ok, Injo ; Smith, Greg ; Kang, C. Y. ; Lee, S. H. ; Oh, Jungwoo ; Sassman, B. ; Majhi, P. ; Kirsch, P. ; Tseng, H. H. ; Jammy, R. / Selective phase modulation of NiSi using N-ion implantation for high performance dopant-segregated source/drain n-channel MOSFETs. 2009 Symposium on VLSI Technology, VLSIT 2009. 2009. pp. 100-101
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title = "Selective phase modulation of NiSi using N-ion implantation for high performance dopant-segregated source/drain n-channel MOSFETs",
abstract = "We have developed a novel dual phase-modulated Ni silicide for Schottky barrier and series resistance reduction in dopant-segregated source/drain (DSS) n-MOSFETs. Using pre-silicide N2 + implant (thereafter N-implant), it is possible to selectively form interfacial epitaxial Si-rich NiSi2, reducing electron Schottky barrier(SB) from 0.7eV to 0.34 eV while maintaining a low resistive bulk NiSi, at the same silicide formation temperature. Dual phase-modulated NiSi shows enhanced thermal stability up to 750°C, low ρs of 26 μΩcm and SB modulation Δφ Bn = 0.36 eV (expected 81{\%} reduction in contact resistance R c). Saturation gm for phase-modulated N-modulated DSS n-FETs shows 32{\%} improvement over control NiSi with 22{\%} reduction in series resistance Rext, while still maintaining CMOS integratability.",
author = "Loh, {W. Y.} and Hung, {P. Y.} and Coss, {B. E.} and P. Kalra and Injo Ok and Greg Smith and Kang, {C. Y.} and Lee, {S. H.} and Jungwoo Oh and B. Sassman and P. Majhi and P. Kirsch and Tseng, {H. H.} and R. Jammy",
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Loh, WY, Hung, PY, Coss, BE, Kalra, P, Ok, I, Smith, G, Kang, CY, Lee, SH, Oh, J, Sassman, B, Majhi, P, Kirsch, P, Tseng, HH & Jammy, R 2009, Selective phase modulation of NiSi using N-ion implantation for high performance dopant-segregated source/drain n-channel MOSFETs. in 2009 Symposium on VLSI Technology, VLSIT 2009., 5200648, pp. 100-101, 2009 Symposium on VLSI Technology, VLSIT 2009, Kyoto, Japan, 09/6/16.

Selective phase modulation of NiSi using N-ion implantation for high performance dopant-segregated source/drain n-channel MOSFETs. / Loh, W. Y.; Hung, P. Y.; Coss, B. E.; Kalra, P.; Ok, Injo; Smith, Greg; Kang, C. Y.; Lee, S. H.; Oh, Jungwoo; Sassman, B.; Majhi, P.; Kirsch, P.; Tseng, H. H.; Jammy, R.

2009 Symposium on VLSI Technology, VLSIT 2009. 2009. p. 100-101 5200648.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

TY - GEN

T1 - Selective phase modulation of NiSi using N-ion implantation for high performance dopant-segregated source/drain n-channel MOSFETs

AU - Loh, W. Y.

AU - Hung, P. Y.

AU - Coss, B. E.

AU - Kalra, P.

AU - Ok, Injo

AU - Smith, Greg

AU - Kang, C. Y.

AU - Lee, S. H.

AU - Oh, Jungwoo

AU - Sassman, B.

AU - Majhi, P.

AU - Kirsch, P.

AU - Tseng, H. H.

AU - Jammy, R.

PY - 2009/11/16

Y1 - 2009/11/16

N2 - We have developed a novel dual phase-modulated Ni silicide for Schottky barrier and series resistance reduction in dopant-segregated source/drain (DSS) n-MOSFETs. Using pre-silicide N2 + implant (thereafter N-implant), it is possible to selectively form interfacial epitaxial Si-rich NiSi2, reducing electron Schottky barrier(SB) from 0.7eV to 0.34 eV while maintaining a low resistive bulk NiSi, at the same silicide formation temperature. Dual phase-modulated NiSi shows enhanced thermal stability up to 750°C, low ρs of 26 μΩcm and SB modulation Δφ Bn = 0.36 eV (expected 81% reduction in contact resistance R c). Saturation gm for phase-modulated N-modulated DSS n-FETs shows 32% improvement over control NiSi with 22% reduction in series resistance Rext, while still maintaining CMOS integratability.

AB - We have developed a novel dual phase-modulated Ni silicide for Schottky barrier and series resistance reduction in dopant-segregated source/drain (DSS) n-MOSFETs. Using pre-silicide N2 + implant (thereafter N-implant), it is possible to selectively form interfacial epitaxial Si-rich NiSi2, reducing electron Schottky barrier(SB) from 0.7eV to 0.34 eV while maintaining a low resistive bulk NiSi, at the same silicide formation temperature. Dual phase-modulated NiSi shows enhanced thermal stability up to 750°C, low ρs of 26 μΩcm and SB modulation Δφ Bn = 0.36 eV (expected 81% reduction in contact resistance R c). Saturation gm for phase-modulated N-modulated DSS n-FETs shows 32% improvement over control NiSi with 22% reduction in series resistance Rext, while still maintaining CMOS integratability.

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M3 - Conference contribution

SN - 9784863480094

SP - 100

EP - 101

BT - 2009 Symposium on VLSI Technology, VLSIT 2009

ER -

Loh WY, Hung PY, Coss BE, Kalra P, Ok I, Smith G et al. Selective phase modulation of NiSi using N-ion implantation for high performance dopant-segregated source/drain n-channel MOSFETs. In 2009 Symposium on VLSI Technology, VLSIT 2009. 2009. p. 100-101. 5200648