Selective photo-thermal modulation of ZnO/Pt interface for monolithic 3D integration of oxide-based resistive random access memory

Chul Jin Park; Jin Whan Kim; Seok Daniel Namgung; Jang Yeon Kwon; Moo Whan Shin

doi:10.1016/j.apsusc.2020.146380

Selective photo-thermal modulation of ZnO/Pt interface for monolithic 3D integration of oxide-based resistive random access memory

Chul Jin Park, Jin Whan Kim, Seok Daniel Namgung, Jang Yeon Kwon, Moo Whan Shin

School of Integrated Technology

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

Selective and localized process technology is a key enabler for the monolithic three-dimensional (M3D) integration of high-performance oxide-based resistive random access memory (RRAM) which is emerging as a post-flash nonvolatile memory solution. In this work, a photo-thermal laser process in a ZnO/Pt multi-layered structure is proposed as a new strategy to modulate the crystallinity at the ZnO/Pt interface and the oxygen vacancy (V_O) distribution in the ZnO layer. Intensive optical and thermal simulation has been utilized for the optimized laser processing of the ZnO/Pt interface. It is verified that the optimized laser process can produce a thin ZnO crystallized layer on the ZnO/Pt interface and a significant concentration gradient of V_O within the ZnO layer, without any deformation of the multi-layered structure. The switching characteristics of the laser-processed Pt/ZnO/Pt RRAM reveal that the laser process can increase the R_HRS/R_LRS ratio by up to tenfold and decrease the V_SET by about 25%. The reliability of the RRAMs is also considerably improved. Our research demonstrates that the photo-thermal approach is a very promising method for improving oxide-based RRAM performance while meeting the critical requirements of M3D integration.

Original language	English
Article number	146380
Journal	Applied Surface Science
Volume	520
DOIs	https://doi.org/10.1016/j.apsusc.2020.146380
Publication status	Published - 2020 Aug 1

Bibliographical note

Funding Information:
This research was supported by the MIST (Ministry of Science and ICT), Korea , under the “ICT Consilience Creative Program” (IITP-2019-2017-0-01015) supervised by the IITP (Institute for Information & communications Technology Planning & Evaluation) .

All Science Journal Classification (ASJC) codes

Chemistry(all)
Condensed Matter Physics
Physics and Astronomy(all)
Surfaces and Interfaces
Surfaces, Coatings and Films

Access to Document

10.1016/j.apsusc.2020.146380

Fingerprint Dive into the research topics of 'Selective photo-thermal modulation of ZnO/Pt interface for monolithic 3D integration of oxide-based resistive random access memory'. Together they form a unique fingerprint.

Cite this

@article{086448dc44a84deba604e6ad15777c0c,

title = "Selective photo-thermal modulation of ZnO/Pt interface for monolithic 3D integration of oxide-based resistive random access memory",

abstract = "Selective and localized process technology is a key enabler for the monolithic three-dimensional (M3D) integration of high-performance oxide-based resistive random access memory (RRAM) which is emerging as a post-flash nonvolatile memory solution. In this work, a photo-thermal laser process in a ZnO/Pt multi-layered structure is proposed as a new strategy to modulate the crystallinity at the ZnO/Pt interface and the oxygen vacancy (VO) distribution in the ZnO layer. Intensive optical and thermal simulation has been utilized for the optimized laser processing of the ZnO/Pt interface. It is verified that the optimized laser process can produce a thin ZnO crystallized layer on the ZnO/Pt interface and a significant concentration gradient of VO within the ZnO layer, without any deformation of the multi-layered structure. The switching characteristics of the laser-processed Pt/ZnO/Pt RRAM reveal that the laser process can increase the RHRS/RLRS ratio by up to tenfold and decrease the VSET by about 25%. The reliability of the RRAMs is also considerably improved. Our research demonstrates that the photo-thermal approach is a very promising method for improving oxide-based RRAM performance while meeting the critical requirements of M3D integration.",

author = "Park, {Chul Jin} and Kim, {Jin Whan} and Namgung, {Seok Daniel} and Kwon, {Jang Yeon} and Shin, {Moo Whan}",

note = "Funding Information: This research was supported by the MIST (Ministry of Science and ICT), Korea , under the “ICT Consilience Creative Program” (IITP-2019-2017-0-01015) supervised by the IITP (Institute for Information & communications Technology Planning & Evaluation) . ",

year = "2020",

month = aug,

day = "1",

doi = "10.1016/j.apsusc.2020.146380",

language = "English",

volume = "520",

journal = "Applied Surface Science",

issn = "0169-4332",

publisher = "Elsevier",

}

TY - JOUR

T1 - Selective photo-thermal modulation of ZnO/Pt interface for monolithic 3D integration of oxide-based resistive random access memory

AU - Park, Chul Jin

AU - Kim, Jin Whan

AU - Namgung, Seok Daniel

AU - Kwon, Jang Yeon

AU - Shin, Moo Whan

N1 - Funding Information: This research was supported by the MIST (Ministry of Science and ICT), Korea , under the “ICT Consilience Creative Program” (IITP-2019-2017-0-01015) supervised by the IITP (Institute for Information & communications Technology Planning & Evaluation) .

PY - 2020/8/1

Y1 - 2020/8/1

N2 - Selective and localized process technology is a key enabler for the monolithic three-dimensional (M3D) integration of high-performance oxide-based resistive random access memory (RRAM) which is emerging as a post-flash nonvolatile memory solution. In this work, a photo-thermal laser process in a ZnO/Pt multi-layered structure is proposed as a new strategy to modulate the crystallinity at the ZnO/Pt interface and the oxygen vacancy (VO) distribution in the ZnO layer. Intensive optical and thermal simulation has been utilized for the optimized laser processing of the ZnO/Pt interface. It is verified that the optimized laser process can produce a thin ZnO crystallized layer on the ZnO/Pt interface and a significant concentration gradient of VO within the ZnO layer, without any deformation of the multi-layered structure. The switching characteristics of the laser-processed Pt/ZnO/Pt RRAM reveal that the laser process can increase the RHRS/RLRS ratio by up to tenfold and decrease the VSET by about 25%. The reliability of the RRAMs is also considerably improved. Our research demonstrates that the photo-thermal approach is a very promising method for improving oxide-based RRAM performance while meeting the critical requirements of M3D integration.

AB - Selective and localized process technology is a key enabler for the monolithic three-dimensional (M3D) integration of high-performance oxide-based resistive random access memory (RRAM) which is emerging as a post-flash nonvolatile memory solution. In this work, a photo-thermal laser process in a ZnO/Pt multi-layered structure is proposed as a new strategy to modulate the crystallinity at the ZnO/Pt interface and the oxygen vacancy (VO) distribution in the ZnO layer. Intensive optical and thermal simulation has been utilized for the optimized laser processing of the ZnO/Pt interface. It is verified that the optimized laser process can produce a thin ZnO crystallized layer on the ZnO/Pt interface and a significant concentration gradient of VO within the ZnO layer, without any deformation of the multi-layered structure. The switching characteristics of the laser-processed Pt/ZnO/Pt RRAM reveal that the laser process can increase the RHRS/RLRS ratio by up to tenfold and decrease the VSET by about 25%. The reliability of the RRAMs is also considerably improved. Our research demonstrates that the photo-thermal approach is a very promising method for improving oxide-based RRAM performance while meeting the critical requirements of M3D integration.

UR - http://www.scopus.com/inward/record.url?scp=85083464043&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85083464043&partnerID=8YFLogxK

U2 - 10.1016/j.apsusc.2020.146380

DO - 10.1016/j.apsusc.2020.146380

M3 - Article

AN - SCOPUS:85083464043

VL - 520

JO - Applied Surface Science

JF - Applied Surface Science

SN - 0169-4332

M1 - 146380

ER -